BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

More documents

Recommendations

Info

Benchmark Test ResultsIds (A)1.E-031.E-041.E-051.E-061.E-071.E-081.E-091.E-101.E-111.E-12Vbs=0VVbs=-3.3VSolid lines: Model resultsSymbols: Exp. dataW/L=20/0.5Tox=9 nmVds=0.05V0.0 1.0 2.0 3.0 4.0Vgs (V)Figure 7-7. Same as Figure 7-5 but for a short channel device.Ids (A)5.E-045.E-044.E-044.E-043.E-043.E-042.E-042.E-041.E-045.E-050.E+00W/L=20/0.5Tox=9 nmVds=0.05VVbs=0VVbs=-3.3V0.0 1.0 2.0 3.0 4.0Vgs (V)Figure 7-8. Same as Figure 7-6 but for a short channel device.7-6 BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley
Benchmark Test Resultsgm/Ids (mho/A)3025201510Vds=3.3VSolid lines: Model resultsSymbols: Exp. dataW/L=20/5Tox=9 nmVbs=0V50Vds=0.05V0.0 1.0 2.0 3.0 4.0Vgs (V)Figure 7-9. G m /I ds continuity from subthreshold to strong inversion regions.30gm/Ids (mho/A)252015105Vds=3.3VVds=0.05VW/L=20/0.5Tox=9 nmVbs=0V00.0 1.0 2.0 3.0 4.0Vgs (V)Figure 7-10. Same as Figure 7-9 but for a short channel device.BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley 7-7
Page 1 and 2:
BSIM3v3.2.2 MOSFET ModelUsers’ Ma
Page 5 and 6:
Table of ContentsCHAPTER 1: Introdu
Page 7 and 8:
CHAPTER 6: Parameter Extraction 6-1
Page 9 and 10:
APPENDIX C: References C-1APPENDIX
Page 11 and 12:
CHAPTER 1: Introduction1.1 General
Page 14 and 15:
Non-Uniform Doping and Small Channe
Page 16 and 17:
Page 18 and 19:
Page 20 and 21:
Page 22 and 23:
Page 24 and 25:
Page 26 and 27:
Page 28 and 29:
Mobility Modelµeffµ=01 + ( E E )e
Page 30 and 31:
Bulk Charge Effectµ eff Ev = , E <
Page 32 and 33:
Strong Inversion Drain Current (Lin
Page 34 and 35:
Strong Inversion Current and Output
Page 36 and 37:
Page 38 and 39:
Page 40 and 41:
Page 42 and 43:
Subthreshold Drain CurrentV1 PSCBE2
Page 44 and 45:
Effective Channel Length and Widthd
Page 46 and 47:
Poly Gate Depletion EffectNgateFigu
Page 48 and 49:
Poly Gate Depletion Effect1.00Tox=8
Page 50 and 51:
Poly Gate Depletion EffectBSIM3v3.2
Page 52 and 53:
Poly Gate Depletion Effect2-40 BSIM
Page 54 and 55:
Unified Channel Charge Density Expr
Page 56 and 57:
Unified Channel Charge Density Expr
Page 58 and 59:
Unified Mobility Expression∆QVF(
Page 60 and 61:
Unified Linear Current ExpressionI=
Page 62 and 63:
Unified Vdsat ExpressionLet V ds =V
Page 64 and 65:
Single Current Expression for All O
Page 67 and 68:
KAPITEL 7RESULTAT OCH REKOMMENDATIO
Page 69 and 70:
CHAPTER 4: Capacitance ModelingAccu
Page 71 and 72:
Geometry Definition for C-V Modelin
Page 73 and 74:
Methodology for Intrinsic Capacitan
Page 75 and 76:
Page 77 and 78:
Page 79 and 80:
Page 81 and 82:
Page 83 and 84:
Charge-Thickness Capacitance Modelp
Page 85 and 86:
Charge-Thickness Capacitance Modelw
Page 87 and 88:
Extrinsic CapacitanceFigure 4-4 ill
Page 89 and 90: Extrinsic Capacitance2( V + δ ) 4
Page 91 and 92: CHAPTER 5: Non-Quasi Static Model5.
Page 93 and 94: Model FormulationFigure 5-1. Quasi-
Page 95 and 96: Model Formulationwhere elm is the E
Page 97 and 98: Model Formulationwhere i represents
Page 99 and 100: CHAPTER 6: Parameter ExtractionPara
Page 101 and 102: Extraction ProcedureWOrthogonal Set
Page 103 and 104: Extraction ProcedureInitial Guess o
Page 105 and 106: Extraction Procedureoptimization. (
Page 107 and 108: Extraction ProcedureStep 7Extracted
Page 109 and 110: Extraction ProcedureB0, B1Fitting T
Page 111 and 112: Extraction ProcedureStep 20Extracte
Page 113 and 114: Notes on Parameter Extraction6.4.2
Page 115 and 116: Notes on Parameter ExtractionnC-1.
Page 117 and 118: CHAPTER 6: Parameter ExtractionPara
Page 119 and 120: Extraction ProcedureWOrthogonal Set
Page 121 and 122: Extraction ProcedureInitial Guess o
Page 123 and 124: Extraction Procedureoptimization. (
Page 125 and 126: Extraction ProcedureStep 7Extracted
Page 127 and 128: Extraction ProcedureB0, B1Fitting T
Page 129 and 130: Extraction ProcedureStep 20Extracte
Page 131 and 132: Notes on Parameter Extraction6.4.2
Page 133 and 134: Notes on Parameter ExtractionnC-1.
Page 135 and 136: CHAPTER 7: Benchmark Test ResultsA
Page 137 and 138: Benchmark Test ResultsIds (A)1.E-02
Page 139: Benchmark Test ResultsIds (A)1.E-03
Page 143 and 144: Benchmark Test ResultsIds (A)8.E-05
Page 145 and 146: CHAPTER 8: Noise Modeling8.1 Flicke
Page 147 and 148: Flicker NoiseNlC=ox( V −V− min(
Page 149 and 150: Noise Model Flag8.3 Noise Model Fla
Page 151 and 152: CHAPTER 9: MOS Diode Modeling9.1 Di
Page 153 and 154: Diode IV ModelJssw= Js0sw⎛ E⎜
Page 155 and 156: MOS Diode Capacitance Model9.1.3 Mo
Page 157 and 158: MOS Diode Capacitance Model(9.18)Cj
Page 159 and 160: MOS Diode Capacitance Model(9.26)Cj
Page 161 and 162: MOS Diode Capacitance Model(9.32)
Page 163 and 164: APPENDIX A: Parameter ListA.1 Model
Page 165 and 166: DC ParametersSymbolsused inequation
Page 167 and 168: DC ParametersSymbolsused inequation
Page 169 and 170: C-V Model ParametersSymbolsused ine
Page 171 and 172: dW and dL ParametersA.5 dW and dL P
Page 173 and 174: Temperature ParametersSymbolsused i
Page 175 and 176: Process ParametersSymbolsused inequ
Page 177 and 178: Model Parameter NotesK2( γ1−γ)(
Page 179 and 180: Model Parameter NotesCgdo = dlc * C
Page 181 and 182: APPENDIX B: Equation ListB.1 I-V Mo
Page 183 and 184: I-V ModelC C V C V D L effDL effdsc
Page 185 and 186: I-V ModelEsatsat= 2νµ effB.1.5 Ef
Page 187 and 188: I-V ModelB.1.8 Polysilicon Depletio
Page 189 and 190: Capacitance Model EquationsTRdsw( T
Page 191 and 192:
Capacitance Model EquationsB.2.2.2
Page 193 and 194:
Capacitance Model EquationsQ inv= 0
Page 195 and 196:
Capacitance Model Equationsif (V ds
Page 197 and 198:
Capacitance Model Equations⎡Q W L
Page 199 and 200:
Capacitance Model EquationsVgsteff
Page 201 and 202:
Capacitance Model Equations(i) 50/5
Page 203 and 204:
Capacitance Model EquationsAbulk0
Page 205 and 206:
Capacitance Model Equations(3) capM
Page 207 and 208:
Capacitance Model EquationsδQsub=
Page 209 and 210:
APPENDIX C: References[1] G.S. Gild
Page 211 and 212:
[18] M.C. Jeng, "Design and Modelin
Page 213 and 214:
[35] K.K. Hung et al, “A Physics-
Page 215 and 216:
APPENDIX D: Model Parameter Binning
Page 217 and 218:
DC ParametersSymbolsused inequation
Page 219 and 220:
DC ParametersSymbolsused inequation
Page 221 and 222:
AC and Capacitance ParametersD.3 AC
Page 223 and 224:
NQS ParametersD.4 NQS ParametersSym
Page 225 and 226:
Temperature ParametersD.6 Temperatu
Page 227 and 228:
Process ParametersSymbolsused inequ
show all

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

Create successful ePaper yourself

Delete template?

Save as template?