BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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Charge-Thickness Capacitance Modelrepresents the boundary conditions (the average of the electric fields at the top andthe bottom of the charge layers) of the Schrodinger and the Poisson equations.Inversion Charge Thickness (A)7060Tox=20A Tox=50ATox=70A Tox=90ASolid - Nsub=2e16cm -350Open - Nsub=2e17cm -340+ - Nsub=2e18cm -330Model2010-0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0(Vgsteff+4(Vth-Vfb-2Φ f))/Tox (MV/cm)Figure 4-3. For all Tox and Nsub, modeled inversion charge thickness agrees with numericalquantum simulations.(iii) Body charge thichness in inversionIn inversion region, the body charge thickness effect is accurately modeled byincluding the deviation of the surface potential from 2 [32]Φ sΦ B( V , + 2K12Φ)⎛V⎞⎜gsteffcv , ⋅gsteffcv ox BΦ =Φ −2Φ= ln+ 1⎟δ s Bνt⎜2⎟⎝moin⋅K1oxνt ⎠(4.4.5)where the model parameter moin (defaulting to 15) is introduced for better fit todifferent technologies. The inversion channel charge density is therefore derivedasqinv,( V )= −Coxeff⋅gsteffcv−Φ δ(4.4.6)4-18 BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley
Extrinsic CapacitanceFigure 4-4 illustrates the universality of CTM model by compariing C gg of a SiON/Ta 2 O 5 /TiN gate stack structure with an equivalent T ox of 1.8nm between data,numerical quantum simulation and modeling [32].10.07.5Measured Q.M. simulation CTM18A equivalent SiO 2thicknessCgg (pF)5.02.50.0TiN60A Ta 2O 58A SiONp-Si-2 -1 0 1 2 3Vgs (V)Figure 4-4. Universality of CTM is demonstrated by modeling the Cgg of 1.8nm equivalentT ox NMOSFET with SiON/Ta 2 O 5 /TiN gate stack.4.5 Extrinsic Capacitance4.5.1 Fringing CapacitanceThe fringing capacitance consists of a bias independent outer fringingcapacitance and a bias dependent inner fringing capacitance. Only the biasindependent outer fringing capacitance is implemented. Experimentally, itis virtually impossible to separate this capacitance with the overlapcapacitance. Nonetheless, the outer fringing capacitance can betheoretically calculated by2ε⎛ toxCF ln⎜1+π ⎝ Tpoly=ox⎞⎟⎠(4.5.1)BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley 4-19
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BSIM3v3.2.2 MOSFET ModelUsers’ Ma
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Table of ContentsCHAPTER 1: Introdu
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CHAPTER 6: Parameter Extraction 6-1
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APPENDIX C: References C-1APPENDIX
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CHAPTER 1: Introduction1.1 General
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Non-Uniform Doping and Small Channe
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Mobility Modelµeffµ=01 + ( E E )e
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Bulk Charge Effectµ eff Ev = , E <
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Strong Inversion Drain Current (Lin
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Strong Inversion Current and Output
Page 36 and 37: Strong Inversion Current and Output
Page 42 and 43: Subthreshold Drain CurrentV1 PSCBE2
Page 44 and 45: Effective Channel Length and Widthd
Page 46 and 47: Poly Gate Depletion EffectNgateFigu
Page 48 and 49: Poly Gate Depletion Effect1.00Tox=8
Page 50 and 51: Poly Gate Depletion EffectBSIM3v3.2
Page 52 and 53: Poly Gate Depletion Effect2-40 BSIM
Page 54 and 55: Unified Channel Charge Density Expr
Page 56 and 57: Unified Channel Charge Density Expr
Page 58 and 59: Unified Mobility Expression∆QVF(
Page 60 and 61: Unified Linear Current ExpressionI=
Page 62 and 63: Unified Vdsat ExpressionLet V ds =V
Page 64 and 65: Single Current Expression for All O
Page 67 and 68: KAPITEL 7RESULTAT OCH REKOMMENDATIO
Page 69 and 70: CHAPTER 4: Capacitance ModelingAccu
Page 71 and 72: Geometry Definition for C-V Modelin
Page 73 and 74: Methodology for Intrinsic Capacitan
Page 83 and 84: Charge-Thickness Capacitance Modelp
Page 85: Charge-Thickness Capacitance Modelw
Page 89 and 90: Extrinsic Capacitance2( V + δ ) 4
Page 91 and 92: CHAPTER 5: Non-Quasi Static Model5.
Page 93 and 94: Model FormulationFigure 5-1. Quasi-
Page 95 and 96: Model Formulationwhere elm is the E
Page 97 and 98: Model Formulationwhere i represents
Page 99 and 100: CHAPTER 6: Parameter ExtractionPara
Page 101 and 102: Extraction ProcedureWOrthogonal Set
Page 103 and 104: Extraction ProcedureInitial Guess o
Page 105 and 106: Extraction Procedureoptimization. (
Page 107 and 108: Extraction ProcedureStep 7Extracted
Page 109 and 110: Extraction ProcedureB0, B1Fitting T
Page 111 and 112: Extraction ProcedureStep 20Extracte
Page 113 and 114: Notes on Parameter Extraction6.4.2
Page 115 and 116: Notes on Parameter ExtractionnC-1.
Page 117 and 118: CHAPTER 6: Parameter ExtractionPara
Page 119 and 120: Extraction ProcedureWOrthogonal Set
Page 121 and 122: Extraction ProcedureInitial Guess o
Page 123 and 124: Extraction Procedureoptimization. (
Page 125 and 126: Extraction ProcedureStep 7Extracted
Page 127 and 128: Extraction ProcedureB0, B1Fitting T
Page 129 and 130: Extraction ProcedureStep 20Extracte
Page 131 and 132: Notes on Parameter Extraction6.4.2
Page 133 and 134: Notes on Parameter ExtractionnC-1.
Page 135 and 136: CHAPTER 7: Benchmark Test ResultsA
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Benchmark Test ResultsIds (A)1.E-02
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Benchmark Test Resultsgm/Ids (mho/A
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CHAPTER 8: Noise Modeling8.1 Flicke
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Flicker NoiseNlC=ox( V −V− min(
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Noise Model Flag8.3 Noise Model Fla
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CHAPTER 9: MOS Diode Modeling9.1 Di
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Diode IV ModelJssw= Js0sw⎛ E⎜
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MOS Diode Capacitance Model9.1.3 Mo
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MOS Diode Capacitance Model(9.18)Cj
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MOS Diode Capacitance Model(9.26)Cj
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MOS Diode Capacitance Model(9.32)
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APPENDIX A: Parameter ListA.1 Model
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DC ParametersSymbolsused inequation
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C-V Model ParametersSymbolsused ine
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dW and dL ParametersA.5 dW and dL P
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Temperature ParametersSymbolsused i
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Process ParametersSymbolsused inequ
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Model Parameter NotesK2( γ1−γ)(
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Model Parameter NotesCgdo = dlc * C
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APPENDIX B: Equation ListB.1 I-V Mo
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I-V ModelC C V C V D L effDL effdsc
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I-V ModelEsatsat= 2νµ effB.1.5 Ef
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I-V ModelB.1.8 Polysilicon Depletio
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Capacitance Model EquationsTRdsw( T
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Capacitance Model EquationsB.2.2.2
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Capacitance Model EquationsQ inv= 0
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Capacitance Model Equationsif (V ds
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Capacitance Model Equations⎡Q W L
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Capacitance Model EquationsVgsteff
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Capacitance Model Equations(i) 50/5
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Capacitance Model EquationsAbulk0
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Capacitance Model Equations(3) capM
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Capacitance Model EquationsδQsub=
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APPENDIX C: References[1] G.S. Gild
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[18] M.C. Jeng, "Design and Modelin
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[35] K.K. Hung et al, “A Physics-
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APPENDIX D: Model Parameter Binning
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AC and Capacitance ParametersD.3 AC
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NQS ParametersD.4 NQS ParametersSym
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Temperature ParametersD.6 Temperatu
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Process ParametersSymbolsused inequ
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