BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
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Extraction ProcedureB0, B1Fitting Target Exp. D<strong>at</strong>a: I s<strong>at</strong> (V gs , V bs )/WOne Set <strong>of</strong> Devices (Large and Fixed L &Different W).I ds vs. V ds @ V bs = 0V <strong>at</strong> Different V gsStep 14Extracted Parameters & Fitting TargetD<strong>at</strong>adWgFitting Target Exp. D<strong>at</strong>a: I s<strong>at</strong> (V gs , V bs )/WDevices & Experimental D<strong>at</strong>aOne Set <strong>of</strong> Devices (Large and Fixed L &Different W).I ds vs. V ds @ V bs = 0V <strong>at</strong> Different V gsStep 15Extracted Parameters & Fitting TargetD<strong>at</strong>aP scbe1 , P scbe2Fitting Target Exp. D<strong>at</strong>a: R out (V gs , V ds )Devices & Experimental D<strong>at</strong>aOne Set <strong>of</strong> Devices (Large and Fixed W &Different L).I ds vs. V ds @ V bs = 0V <strong>at</strong> Different V gsStep 16Extracted Parameters & Fitting TargetD<strong>at</strong>aP clm , θ(D rout , P diblc1 , P diblc2 , L), PavgFitting Target Exp. D<strong>at</strong>a: R out (V gs , V ds )Devices & Experimental D<strong>at</strong>aOne Set <strong>of</strong> Devices (Large and Fixed W &Different L).I ds vs. V ds @ V bs = 0V <strong>at</strong> Different V gs<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley 6-11
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