BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
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DC ParametersSymbolsused inequ<strong>at</strong>ionSymbolsused inSPICEDescription Default Unit NoteDvt2w dvt2w Body-bias coefficient <strong>of</strong> narrowwidth effect for small channellengthµ0 u0 Mobility <strong>at</strong> Temp = TnomN<strong>MOSFET</strong>P<strong>MOSFET</strong>Ua ua First-order mobility degrad<strong>at</strong>ioncoefficientUb ub Second-order mobility degrad<strong>at</strong>ioncoefficientUc uc Body-effect <strong>of</strong> mobility degrad<strong>at</strong>ioncoefficient-0.032 1/V670.0250.02.25E-9cm 2 /Vsm/V5.87E-19 (m/V) 2mobMod=1, 2:-4.65e-11mobMod=3:-0.046m/V 21/Vνs<strong>at</strong> vs<strong>at</strong> S<strong>at</strong>ur<strong>at</strong>ion velocity <strong>at</strong> Temp =TnomA0 a0 Bulk charge effect coefficientfor channel length8.0E4 m/sec1.0 noneAgs ags g<strong>at</strong>e bias coefficient <strong>of</strong> Abulk 0.0 1/VB0 b0 Bulk charge effect coefficientfor channel width0.0 mB1 b1 Bulk charge effect width <strong>of</strong>fset 0.0 mKeta keta Body-bias coefficient <strong>of</strong> bulk -0.047 1/Vcharge effectA1 a1 First non-s<strong>at</strong>ur<strong>at</strong>ion effect0.0 1/VparameterA2 a2 Second non-s<strong>at</strong>ur<strong>at</strong>ion factor 1.0 none<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley A-3
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