PCT/2000/42 : PCT Gazette, Weekly Issue No. 42, 2000 - WIPO

42/2000
15398 PCT Gazette - Section I - Gazette du PCT 19 Oct/oct 2000
(43) 19 Oct/oct 2000 (19.10.2000)
(54) LEAD FRAME FOR SEMICON-
DUCTOR DEVICE
GRILLE DE CONNEXION POUR
DISPOSITIF SEMI–CONDUCTEUR
(71) SHINKO ELECTRIC INDUSTRIES
CO., LTD. [JP/JP]; 711, Aza Shariden,
Oaza Kurita, Nagano–shi, Nagano 380–0921
(JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) SEKI, Kazumitsu [JP/JP]; Shinko Electric
Industries Co., Ltd., 711, Aza Shariden,
Oaza Kurita, Nagano–shi, Nagano 380–0921
(JP). YOSHIE, Takashi [JP/JP]; Shinko
Electric Industries Co., Ltd., 711, Aza Shariden,
Oaza Kurita, Nagano–shi, Nagano
380–0921 (JP). SATO, Harunobu [JP/JP];
Shinko Electric Industries Co., Ltd., 711,
Aza Shariden, Oaza Kurita, Nagano–shi, Nagano
380–0921 (JP).
(74) ISHIDA, Takashi et al. / etc.; A. Aoki,
Ishida & Associates, Toranomon 37 Mori
Building, 5–1, Toranomon 3–chome, Minato–ku,
Tokyo 105–8423 (JP).
(81) CN JP KR US; EP (AT BE CH CY DE DK
ES FI FR GB GR IE IT LU MC NL PT SE).
Published / Publiée :(b)
(51) 7 H01L 27/02, 23/60, H01G 4/33
(11) WO 00/62342 (13) A1
(21) PCT/EP00/02789
(22) 29 Mar/mar 2000 (29.03.2000)
(25) en (26) en
(30) 9907910.5 7 Apr/avr 1999
(07.04.1999)
(43) 19 Oct/oct 2000 (19.10.2000)
GB
(54) THIN FILM CAPACITOR ELEMENT
ELEMENT DE CONDENSATEUR A
FILM MINCE
(71) KONINKLIJKE PHILIPS ELECTRO-
NICS N.V. [NL/NL]; Groenewoudseweg 1,
NL–5621 BA Eindhoven (NL).
(72) BATTERSBY, Stephen, J.; Prof. Holstlaan
6, NL–5656 AA Eindhoven (NL).
MURLEY, Darren, T.; Prof. Holstlaan
6, NL–5656 AA Eindhoven (NL).
SHANNON, John, M.; Prof. Holstlaan 6,
NL–5656 AA Eindhoven (NL).
(74) MOODY, Colin, J.; Internationaal Octrooibureau
B.V., Prof. Holstlaan 6, NL–5656 AA
Eindhoven (NL).
(81) JP; EP (AT BE CH CY DE DK ES FI FR
GB GR IE IT LU MC NL PT SE).
(51) 7 H01L 27/12
(11) WO 00/62343 (13) A1
(21) PCT/JP00/02074
(22) 31 Mar/mar 2000 (31.03.2000)
(25) ja (26) ja
(30) 11/102698 9 Apr/avr 1999
(09.04.1999)
JP
(43) 19 Oct/oct 2000 (19.10.2000)
(54) SOI WAFER AND METHOD FOR PRO-
DUCING SOI WAFER
PLAQUETTE A SILICIUM SUR ISO-
LANT ET PROCEDE DE PRODUC-
TION DE PLAQUETTE A SILICIUM
SUR ISOLANT
(71) SHIN–ETSU HANDOTAI CO., LTD.
[JP/JP]; 4–2, Marunouchi 1–chome,
Chiyoda–ku, Tokyo 100–0005 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) FURIHATA, Jun–ichiro [JP/JP]; Isobe
R & D Center, Shin–Etsu Handotai Co.,
Ltd., 13–1, Isobe 2–chome, Annaka–shi,
Gumma 379–0196 (JP). MITANI, Kiyoshi
[JP/JP]; Isobe R & D Center, Shin–Etsu
Handotai Co., Ltd., 13–1, Isobe 2–chome,
Annaka–shi, Gumma 379–0196 (JP). KO-
BAYASHI, Norihiro [JP/JP]; Isobe R &
D Center, Shin–Etsu Handotai Co., Ltd.,
13–1, Isobe 2–chome, Annaka–shi, Gumma
379–0196 (JP). AKIYAMA, Shoji [JP/JP];
Isobe R & D Center, Shin–Etsu Handotai
Co., Ltd, 13–1, Isobe 2–chome, Annaka–shi,
Gumma 379–0196 (JP).
(74) YOSHIMIYA, Mikio; Uenosansei Building
4F, 6–4, Motoasakusa 2–chome, Taito–ku,
Tokyo 111–0041 (JP).
(81) KR US; EP (AT BE CH CY DE DK ES FI
FR GB GR IE IT LU MC NL PT SE).
(51) 7 H01L 27/146, 31/0352, G01J 1/02, 3/36
(11) WO 00/62344 (13) A1
(21) PCT/JP00/02424
(22) 13 Apr/avr 2000 (13.04.2000)
(25) ja (26) ja
(30) 11/105442 13 Apr/avr 1999 JP
(13.04.1999)
(43) 19 Oct/oct 2000 (19.10.2000)
(54) SEMICONDUCTOR DEVICE
DISPOSITIF À SEMICONDUCTEUR
(71) HAMAMATSU PHOTONICS K.K.
[JP/JP]; 1126–1, Ichino–cho, Hamamatsu–shi,
Shizuoka–ken 435–8558 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) MURAMATSU, Masaharu [JP/JP];
Hamamatsu Photonics K.K., 1126–1,
Ichino–cho, Hamamatsu–shi, Shizuoka–ken
435–8558 (JP).
(74) HASEGAWA, Yoshiki et al. / etc.; Soei
Patent and Law Firm, Okura–Honkan, 6–12,
Ginza 2–chome, Chuo–ku, Tokyo 104–0061
(JP).
(81) AE AL AM AT AU AZ BA BB BG BR BY
CA CH CN CR CU CZ DE DK DM EE ES
FI GB GD GE GH GM HR HU ID IL IN
IS JP KE KG KP KR KZ LC LK LR LS LT
LU LV MA MD MG MK MN MW MX NO
NZ PL PT RO RU SD SE SG SI SK SL TJ
TM TR TT TZ UA UG US UZ VN YU ZA
ZW; AP (GH GM KE LS MW SD SL SZ
TZ UG ZW); EA (AM AZ BY KG KZ MD
RU TJ TM); EP (AT BE CH CY DE DK ES
FI FR GB GR IE IT LU MC NL PT SE);
OA (BF BJ CF CG CI CM GA GN GW ML
MR NE SN TD TG).
(51) 6 H01L 29/78
(11) WO 00/62345 (13) A1
(21) PCT/JP99/01885
(22) 9 Apr/avr 1999 (09.04.1999)
(25) ja (26) ja
(43) 19 Oct/oct 2000 (19.10.2000)
(54) HIGH–VOLTAGE
DEVICE
SEMICONDUCTOR
DISPOSITIF A SEMI–CONDUCTEUR
HAUTE TENSION
(71) SHINDENGEN ELECTRIC MANUFAC-
TURING CO., LTD. [JP/JP]; 2–1, Ohtemachi
2–chome, Chiyoda–ku, Tokyo 100–0004
(JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) MIYAKOSHI, Nobuki [JP/JP]; Shindengen
Electric Manufacturing Co., Ltd.,
10–13, Minami–cho, Hanno–shi, Saitama
357–8585 (JP). FUKUI, Masanori [JP/JP];
Shindengen Electric Manufacturing Co.,
Ltd., 10–13, Minami–cho, Hanno–shi,
Saitama 357–8585 (JP). NAKAMURA,
Hideyuki [JP/JP]; Shindengen Electric Manufacturing
Co., Ltd., 10–13, Minami–cho,
Hanno–shi, Saitama 357–8585 (JP).
(74) ISHIJIMA, Shigeo et al. / etc.; Toranomonkougyou
Building 3F, 2–18, Toranomon
1–chome, Minato–ku, Tokyo
105–0001 (JP).
(81) US; EP (AT BE CH CY DE DK ES FI FR
GB GR IE IT LU MC NL PT SE).
(51) 7 H01L 29/861
(11) WO 00/62346 (13) A1
(21) PCT/EP00/02792
(22) 29 Mar/mar 2000 (29.03.2000)
(25) en (26) en
(30) 99302762.2 8 Apr/avr 1999
(08.04.1999)
(43) 19 Oct/oct 2000 (19.10.2000)
EP
(54) PUNCHTHROUGH DIODE AND ME-
THOD
SAME
OF MANUFACTURING THE
DIODE A EFFET DE CLAQUAGE ET
SON PROCEDE DE FABRICATION
(71) KONINKLIJKE PHILIPS ELECTRO-
NICS N.V. [NL/NL]; Groenewoudseweg 1,
NL–5621 BA Eindhoven (NL).
(72) BROWN, Adam, R.; Prof. Holstlaan 6,
NL–5656 AA Eindhoven (NL). HURKX,
Godefridus, A., M.; Prof. Holstlaan 6,
NL–5656 AA Eindhoven (NL). DE BOER,
Wiebe, B.; Prof. Holstlaan 6, NL–5656
AA Eindhoven (NL). HUIZING, Hendrik,
G., A.; Prof. Holstlaan 6, NL–5656 AA
Eindhoven (NL). HUANG, Eddie; Prof.
Holstlaan 6, NL–5656 AA Eindhoven (NL).
(74) SMEETS, Eugenius, T., J., M.; Internationaal
Octrooibureau B.V., Prof. Holstlaan 6,
NL–5656 AA Eindhoven (NL).