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HVAC Control in the New Millennium.pdf - HVAC.Amickracing

HVAC Control in the New Millennium.pdf - HVAC.Amickracing

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Advanced <strong>HVAC</strong> <strong>Control</strong>, Information Technology and Open Systems 131Chapter 4Advanced <strong>HVAC</strong> <strong>Control</strong>,Information TechnologyAnd Open SystemsClean rooms represent space areas that are used for test<strong>in</strong>g/analysis laboratories, <strong>in</strong> medical, military and electronic process<strong>in</strong>g<strong>in</strong>dustries. The optimization of clean room controls isan important area <strong>in</strong> <strong>the</strong> future of <strong>HVAC</strong> controls. Many of<strong>the</strong>se concepts will be f<strong>in</strong>d<strong>in</strong>g <strong>the</strong>ir way <strong>in</strong>to build<strong>in</strong>g automation.The production of semiconductors must take place <strong>in</strong> a clean roomenvironment. Optimization of <strong>the</strong> clean room control system can reduce<strong>the</strong> cost of operation and <strong>the</strong> number of product defects. In semiconductormanufactur<strong>in</strong>g, an area of 100,000 square feet (9290 square meters)can have a daily production worth of over $1 million.Semiconductor Manufactur<strong>in</strong>gThe overall semiconductor fabrication process consists of <strong>the</strong> pattern<strong>in</strong>gof a sequence of successive layers. The pattern<strong>in</strong>g steps aretransferred <strong>in</strong>to layers of <strong>the</strong> f<strong>in</strong>al system. The sequence of layers is usedto build up an <strong>in</strong>tegrated system.One process is <strong>the</strong> creation of a silicon dioxide <strong>in</strong>sulat<strong>in</strong>g layeron <strong>the</strong> surface of a silicon wafer and <strong>the</strong> selective removal of sectionsof <strong>the</strong> <strong>in</strong>sulat<strong>in</strong>g layer. This step beg<strong>in</strong>s with a bare polished siliconwafer. The wafer is exposed to oxygen <strong>in</strong> a high-temperature furnaceto grow a uniform layer of silicon dioxide on its surface. After <strong>the</strong>wafer is cooled, it is coated with a th<strong>in</strong> film of organic resist material.©2001 by The Fairmont Press, Inc. All rights reserved.

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