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148 Bibliographie[Han 2007] Melinda Y. Han, Barbaros Özyilmaz, Yuanbo Zhang et Philip Kim.Energy Band-Gap Engineering of Graphene Nanoribbons. Phys. Rev. Lett.,vol. 98, no. 20, page 206805, May 2007. (Cité en page 128.)[Han 2010] Melinda Y. Han, Juliana C. Brant et Philip Kim. Electron Transportin Disordered Graphene Nanoribbons. Phys. Rev. Lett., vol. 104, no. 5, page056801, Feb 2010. (Cité en page 133.)[Huang 2007] Y C Huang, C P Chang et M F Lin. Magnetic and quantum connementeects on electronic and optical properties of graphene ribbons. Nanotechnology,vol. 18, no. 49, page 495401, 2007. (Cité en page 25.)[Hwang 2007a] E. H. Hwang, S. Adam et S. Das Sarma. Carrier Transport in Two-Dimensional Graphene Layers. Phys. Rev. Lett., vol. 98, no. 18, page 186806,May 2007. (Cité en pages 74, 77 et 99.)[Hwang 2007b] E. H. Hwang, S. Adam et S. Das Sarma. Transport in chemicallydoped graphene in the presence of adsorbed molecules. Phys. Rev. B, vol. 76,no. 19, page 195421, Nov 2007. (Cité en page 72.)[Hwang 2010] E. H. Hwang et S. Das Sarma. Insulating behavior in metallic bilayergraphene : Interplay between density inhomogeneity and temperature. Phys.Rev. B, vol. 82, no. 8, page 081409, Aug 2010. (Cité en pages 98 et 99.)[Ihnatsenka 2009] S. Ihnatsenka et G. Kirczenow. Conductance quantization instrongly disordered graphene ribbons. Phys. Rev. B, vol. 80, no. 20, page201407, Nov 2009. (Cité en pages 46, 48 et 128.)[Ishigami 2007] Masa Ishigami, J. H. Chen, W. G. Cullen, M. S. Fuhrer et E. D.Williams. Atomic Structure of Graphene on SiO2. Nano Letters, vol. 7, no. 6,pages 16431648, 2007. (Cité en page 135.)[Jiang 2007] Z. Jiang, Y. Zhang, H. L. Stormer et P. Kim. Quantum Hall Statesnear the Charge-Neutral Dirac Point in Graphene. Phys. Rev. Lett., vol. 99,no. 10, page 106802, Sep 2007. (Cité en pages 71 et 80.)[Jung 2009] J. Jung et A. H. MacDonald. Theory of the magnetic-eld-inducedinsulator in neutral graphene sheets. Phys. Rev. B, vol. 80, no. 23, page235417, Dec 2009. (Cité en page 72.)[Katsnelson 006c] M. I. Katsnelson. Zitterbewegung, chirality, and minimal conductivityin graphene. The European Physical Journal B, vol. 51, page 157,2006c. (Cité en pages 38 et 135.)[Kim 2009] Seyoung Kim, Junghyo Nah, Insun Jo, Davood Shahrjerdi, Luigi Colombo,Zhen Yao, Emanuel Tutuc et Sanjay K. Banerjee. Realization of ahigh mobility dual-gated graphene eld-eect transistor with Al[sub 2]O[sub3] dielectric. Applied Physics Letters, vol. 94, no. 6, page 062107, 2009. (Citéen pages 81, 91 et 114.)[Klitzing 1980] K. v. Klitzing, G. Dorda et M. Pepper. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on QuantizedHall Resistance. Phys. Rev. Lett., vol. 45, no. 6, pages 494497, Aug 1980.(Cité en page 48.)
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RemerciementsMon travail de thèse
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Table des matières1 Structure de b
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Table des matièresv6.4 Conclusion
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2 Table des matièresun gap d'éner
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Chapitre 1Structure de bandes de sy
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1.1. Graphène 71.1.2 Structure de
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1.1. Graphène 9L'étendue spatiale
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1.2. Graphène multi-feuillet 11Fig
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1.2. Graphène multi-feuillet 131.2
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1.2. Graphène multi-feuillet 15En
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1.2. Graphène multi-feuillet 17Fig
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1.3. Nanoruban de graphène 19Figur
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1.4. Résumé et conclusion 27de La
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30 Chapitre 2. Généralités sur l
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Chapitre 3Cadre experimentalSommair
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3.1. Caractéristiques des échanti
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3.2. Techniques de mesure : Mesures
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3.2. Techniques de mesure : Mesures
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72 Chapitre 4. Magnéto-transport d
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90 Chapitre 5. Graphène multi-feui
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Page 149 and 150: ConclusionDans cette thèse, nous a
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Page 159 and 160: Bibliographie 151[Nomura 2006] Kent
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