M16C/62 Group DATASHEET

Description (Flash Memory Version)Mitsubishi microcomputersM16C / 62 GroupSINGLE-CHIP 16-BIT CMOS MICROCOMPUTERFlash MemoryThe M16C/62 (flash memory version) contains the DINOR (DIvided bit line NOR) type of flash memory thatcan be rewritten with a single voltage of 5 V or 3.3 V. For this flash memory, three flash memory modes areavailable in which to read, program, and erase: parallel I/O and standard serial I/O modes in which the flashmemory can be manipulated using a programmer and a CPU rewrite mode in which the flash memory canbe manipulated by the Central Processing Unit (CPU). Each mode is detailed in the pages to follow.The flash memory is divided into several blocks as shown in Figure 1.28.1, so that memory can be erasedone block at a time. Each block has a lock bit to enable or disable execution of an erase or programoperation, allowing for data in each block to be protected.In addition to the ordinary user ROM area to store a microcomputer operation control program, the flashmemory has a boot ROM area that is used to store a program to control rewriting in CPU rewrite andstandard serial I/O modes. This boot ROM area has had a standard serial I/O mode control program storedin it when shipped from the factory. However, the user can write a rewrite control program in this area thatsuits the user’s application system. This boot ROM area can be rewritten in only parallel I/O mode.0C000016Block 6 : 64K byte0D000016Block 5 : 64K byteFlash memorysizeFlash memorystart address256 K byte 0C0000160E0000160F0000160F8000160FA000160FC000160FFFFF16Block 4 : 64K byteBlock 3 : 32K byteBlock 2 : 8K byteBlock 1 : 8K byteBlock 0 : 16K byteUser ROM areaNote 1: The boot ROM area can be rewritten inonly parallel input/output mode. (Accessto any other areas is inhibited.)Note 2: To specify a block, use the maximumaddress in the block that is an evenaddress.0FE000160FFFFF168K byteBoot ROM areaFigure 1.28.1. Block diagram of flash memory version235