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NASA Scientific and Technical Aerospace Reports

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inconsistent with the theory on which the current model is based for the limited number of glasses tested. It should be noted<br />

that these glasses cover a narrow compositional region. With respect to the impact on viscosity, the data suggest that there may<br />

be a bias in the model. That is, the model currently does not contain a U3O8 or ThO2 term - but perhaps it should to account<br />

for their contributions to the measured (or actual) viscosity results. In addition, a series of glasses were produced to assess the<br />

impact of higher waste loadings on select glass properties. The PCT results suggest that durable glasses can be made at<br />

relatively high WLs (exceeding 40 wt percent). Comparisons between the measured PCTs <strong>and</strong> their predictions indicate that<br />

the current model is applicable, with all of the quenched glasses falling within the 95 percent confidence b<strong>and</strong>s. The viscosity<br />

data for the higher WL glasses suggest that the current model may be extremely accurate for some systems but for different<br />

regions the model may be biased high or low - an observation that is consistent with that of Harbour et al. (1999).<br />

NTIS<br />

Glass; Uranium; Thorium Oxides; Substitutes<br />

20040120951 <strong>NASA</strong> Marshall Space Flight Center, Huntsville, AL, USA<br />

Bridgman Growth of Germanium Crystals in a Rotating Magnetic Field<br />

Volz, M. P.; Walker, J. S.; Schweizer, M.; Cobb, S. D.; Szofran, F. R.; [2004]; 1 pp.; In English; International Conference on<br />

Crystal Growth 14, 9-13 Aug. 2004, Grenoble, France; No Copyright; Avail: Other Sources; Abstract Only<br />

A series of (100)-oriented gallium-doped germanium crystals have been grown by the Bridgman method <strong>and</strong> under the<br />

influence of a rotating magnetic field (RMF). Time-dependent flow instabilities occur when the critical magnetic Taylor<br />

number (Tm(sup c) is exceeded, <strong>and</strong> this can be observed by noting the appearance of striations in the grown crystals. The<br />

experimental data indicate that Tm(sup c) increases as the aspect ratio of the melt decreases. Modeling calculations predicting<br />

Tm(sup c) as a function of aspect ratio are in reasonable agreement with the experimental data. The RMF has a marked affect<br />

on the interface shape, changing it from concave to nearly flat as the RMF strength is increased. Also, by pulsing the RMF<br />

on <strong>and</strong> off, it is shown that intentional interface demarcations can be introduced.<br />

Author<br />

Bridgman Method; Crystal Growth; Germanium; Magnetic Fields<br />

20040120994 <strong>NASA</strong> Glenn Research Center, Clevel<strong>and</strong>, OH, USA<br />

Lateral Movement of Screw Dislocations During Homoepitaxial Growth <strong>and</strong> Devices Yielded Therefrom Free of the<br />

Detrimental Effects of Screw Dislocations<br />

Neudeck, Philip G., Inventor; Powell, J. Anthony, Inventor; August 31, 2004; 37 pp.; In English; Original contains black <strong>and</strong><br />

white illustrations<br />

Patent Info.: Filed 10 Oct. 2002; US-Patent-6,783,592; US-Patent-Appl-SN-268749; <strong>NASA</strong>-Case-LEW-17237-1; No<br />

Copyright; Avail: CASI; A03, Hardcopy<br />

The present invention is related to a method that enables <strong>and</strong> improves wide b<strong>and</strong>gap homoepitaxial layers to be grown<br />

on axis single crystal substrates, particularly SiC. The lateral positions of the screw dislocations in epitaxial layers are<br />

predetermined instead of r<strong>and</strong>om, which allows devices to be reproducibly patterned to avoid performance degrading crystal<br />

defects normally created by screw dislocations.<br />

Official Gazette of the U.S. Patent <strong>and</strong> Trademark Office<br />

Crystal Growth; Epitaxy; Screw Dislocations; Single Crystals<br />

20040121079 <strong>NASA</strong> Marshall Space Flight Center, Huntsville, AL, USA<br />

Synchrotron X-ray Microdiffraction Analysis of Proton Irradiated Polycrystalline Diamond Films<br />

Newton, R. I.; Davidson, J. L.; Ice, G. E.; Liu, W.; July 26, 2004; 8 pp.; In English; Original contains black <strong>and</strong> white<br />

illustrations<br />

Contract(s)/Grant(s): DE-AC05-00OR-22725; DE-FG02-91ER-45439; DE-AC05-00OR-22725; W-31-09-eng-38; Copyright;<br />

Avail: CASI; A02, Hardcopy<br />

X-ray microdiffraction is a non-destructive technique that allows for depth-resolved, strain measurements with<br />

sub-micron spatial resolution. These capabilities make this technique promising for underst<strong>and</strong>ing the mechanical properties<br />

of MicroElectroMechanical Systems (MEMS). This investigation examined the local strain induced by irradiating a<br />

polycrystalline diamond thin film with a dose of 2x10(exp 17) H(+)per square centimeter protons. Preliminary results indicate<br />

that a measurable strain, on the order of 10(exp -3), was introduced into the film near the End of Range (EOR) region of the<br />

protons.<br />

Author<br />

Synchrotrons; X Ray Diffraction; Protons; Irradiation; Polycrystals; Diamond Films<br />

302

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