Online proceedings - EDA Publishing Association

24-26 September 2008, Rome, Italy[6] N. Nenadović, V. d’Alessandro, L. K. Nanver, F. Tamigi, N. Rinaldi,and J. W. Slotboom, “A back-wafer contacted silicon-on-glassintegrated bipolar process – Part II: A novel analysis of thermalbreakdown,” IEEE Trans. on Electron Devices, vol. 51, no. 1, pp. 51-62, 2004.[12] S. P. Marsh, “Direct extraction technique to derive the junctiontemperature of HBT's under high self-heating bias conditions,” IEEETrans. on Electron Devices, vol. 47, no. 2, pp. 288-291, 2000.[13] R. Menozzi, J. Barrett, and P. Ersland, “A new method to extract HBTthermal resistance and its temperature and power dependence,” IEEE[7] N. Nenadović, V. d’Alessandro, L. La Spina, N. Rinaldi, andL. K. Nanver, “Restabilizing mechanisms after the onset of thermalinstability in bipolar transistors,” IEEE Trans. on Electron Devices,vol. 53, no. 4, pp. 643-653, 2006.Trans. on Device and Materials Reliability, vol. 5, no. 3, pp. 595-601,2005.[14] D. E. Dawson, A. K. Gupta, and M. L. Salib, “CW measurement ofHBT thermal resistance,” IEEE Trans. on Electron Devices, vol. 39,[8] L. La Spina, V. d’Alessandro, F. Santagata, N. Rinaldi, andL. K. Nanver, “Electrothermal effects in bipolar differential pairs,” inProc. IEEE BCTM, pp. 131-134, 2007.no. 10, pp. 2235-2239, 1992.[15] V. d’Alessandro, N. Nenadović, F. Tamigi, L. K. Nanver,H. Schellevis, and J. W. Slotboom, “Detection of thermal runaway and[9] Comsol Multiphysics 3.4. User’s Guide. Comsol AB, 2007.extraction of thermal resistance in silicon-on-glass NPN BJTs using[10] D. T. Zweidinger, R. M. Fox, J. S. Brodsky, T. Jung, and S.-G. Lee,“Thermal impedance extraction for bipolar transistors,” IEEE Trans.on Electron Devices, vol. 43, no. 2, pp. 342-346, 1996.[11] J. Zarębski and K. Górecki, “A method of the BJT transient thermalimpedance measurement with double junction calibration,” in Proc.IEEE Semiconductor Thermal Measurement and ManagementSymposium (SEMI-THERM), pp. 80-82, 1995.the V CB-V BE voltage plane,” in Proc. SAFE/STW, pp. 22-29, 2002.[16] L. La Spina, I. Marano, V. d’Alessandro, H. Schellevis, andL. K. Nanver, “Aluminum-nitride thin-film heatspreaders integrated inbipolar transistors,” in Proc. IEEE EuroSimE, pp. 99-103, 2008.[17] L. La Spina, E. Iborra, H. Schellevis, M. Clement, J. Olivares, andL. K. Nanver, “Aluminum nitride for heatspreading in RF IC’s,”Solid-State Electronics, vol. 52, no. 9, pp. 1359-1363, 2008.©EDA Publishing/THERMINIC 2008 105ISBN: 978-2-35500-008-9