V. SUMMARY AND CONCLUSIONWe discussed the shifts relationship between the mostimportant electrical parameters. The TCT and TST seem tobe equivalent because they apparently produce the samedegradation. The TST cold test seems to induce fasterdegradation than the hot TST and it is minimal in TCTwithout DC and HTSL at these conditions. By coupling theelectric and thermal constraints, the degradation rate isaccelerated. The results obtained highlighted a shift ofimportant electrical parameters as: Gm, Rds_on, Cgd, Crss,S12 and S21. These latter are sensitive parameters to theelectrons injected in gate/SiO2 interface traps. As soon asdrain is biased with high voltage, a high electric fieldappears, which will favour the hot carrier injectionphenomenon. The parameters shift depends on extremestemperatures variation ∆T and quiescent current Ids. Thoseof S parameters degradation are primarily due to decrease intransconductance, increase in Cgd and Crss capacitances,and increase in LDD interface states. We have pointed outthe relation between the accelerated ageing tests and the hotcarrier degradation in RF LDMOS and its effect on theelectric performances (static, dynamic and RF). Theevolution of the device’s main parameters can be used toevaluate its reliability (i.e. lifetime), allowing theestablishment of a correlation between the electric parameterdrift and the applied stress.24-26 September 2008, Rome, Italy[15] D. Brisbin, A. Strachan, P. Chaparala, “Optimizing the hot carrierreliability of N-LDMOS transistor arrays”, MicroelectronicsReliability, vol. 45, pp 1021-1032, 2005.[16] B. Subranhmaniam, J. Y. Chen, and A. H. Johnston, “MOSFETdegradation due to hot-carrier effect at high frequencies,” IEEEElectron Device Lett., vol. 11, pp. 21–23, Jan. 1990.[17] V. H. Chan and J. E. Chung, “The impact of nMOSFET hot carrierdegradation on CMOS analog subcircuits performance,” IEEE J.Solid-State Circuits, vol. 30, pp. 644–649, 1995.[18] C. Guangjun, E.M. Sankara Narayanan, M.M. De Souza and D.Hinchly, “Comparative study of drift region designs in RFLDMOSFETs”, IEEE Trans. Electron Devices, vol. 51, pp. 1296–1303, August 2004.[19] T. Nigam, A. Shibib, S .Xu, H. Safar, L. Steinberg, “Nature andlocation of interface traps in RF LDMOS due to the hot carriers”,M. Engineering, vol. 72, pp. 71-72, 2004.[20] J. P. Walko and B. Abadeer, “RF S-parameter degradation under hotcarrier stress,” in Proc. IEEE Int. Reliability Physics Symp.,Phoenix, AZ, 2004, pp. 422–4255.[21] BS. Doyle, KR. Mistry, DB. Jackson, “Examination of Gradual-Junction p-MOS Structures for Hot Carrier Control Using a NewLifetime Extraction Method”, IEEE Trans. Electron Devices, vol.39, no 10, Oct. 1992.[22] M.A. Belaïd, K. Ketata and M. massmoudi, “2-D simulation andanalysis of temperature effects on electrical parameters degradationof power RF LDMOS device”, NIM B journal, vol. 253, pp. 250–254, 2006.REFERENCES[1] Z. Radivojevic et al. “Operating limits for power amplifiers at highjunction temperatures”, M. Reliability, 2004.[2] M.A. Belaïd et al. “Analysis and Simulation of Self-Heating Effectson RF LDMOS Devices”, in Proc. SISPAD, Tokyo, 2005.[3] A. Raychaudhuri et al. “A simple method to qualify the LDDstructure against the early mode of hot-carrier degradation”, IEEETrans. El. Dev. 1996.[4] I. Cortés et al. “Analysis of hot-carrier degradation in a SOI LDMOStransistor with a steep retrograde drift doping profile”, M.Reliability, 2005.[5] M.A. Belaïd et al. “Comparative analysis of accelerated ageingeffects on power RF LDMOS reliability”, ESREF 2005.[6] Yuan, J.S. Ma, J “Evaluation of RF-Stress Effect on Class-E MOSPower-Amplifier Efficiency”, IEEE Trans. El. Dev. Jan. 2008.[7] C. Yu et al, “Channel Hot-Electron Degradation on 60nm HfO2-Gated nMOSFET DC and RF Performance”, IEEE Trans. El. Dev.2006.[8] M.A. Belaïd et al. “Reliability study of power RF LDMOS deviceunder thermal stress”, Microelectronics Journal, 2007.[9] A. Wood et al. “High performance Silicon LDMOS technology for 2GHz RF power amplifier applications”, IEEE IEDM, T. D. 1996.[10] X. Shuming, F. Pangdow, W. Jianqing, “RF LDMOS with extremelow parasitic feedback capacitance and high hot-carrier immunity”,IEDM Tech. Dig., 1999, 201-204.[11] J. Luo, G. Gao, S. Ekkanath Madathil, MD. Souza, “A highperformance RF LDMOSFET in thin .lm SOI technology with stepdrift profile”, Solid-State Electron. pp. 1937–1941, 2003.[12] J. Pritiskutch, B. Hanson, „Relate LDMOS device parameters to RFperformance”. ST Microelectronics, Application note: AN 1228;2000.[13] E. Takeda, Y. Ohji, and H. Kume, “High Filed Effects inMOSFETS”, IEDM Tech. Dig , 1985, pp. 60-63.[14] P. Heremans, G. Bosch, R. Bellens, G. Groeseneken, H. Maes,“Temperature dependence of the channel hot-carrier degradation ofnchannel MOSFET’s”, IEEE Trans. Electron. Dev, vol. 37, pp.980–993, 1990.©<strong>EDA</strong> <strong>Publishing</strong>/THERMINIC 2008 127ISBN: 978-2-35500-008-9
24-26 September 2008, Rome, ItalyThermal characterization and modelling ofLithium-based batteries at low ambient temperatureDomonkos Szente-Varga, Gyula Horváth, Márta Rencz{szvdom | horvath | rencz}@eet.bme.huAbstract – In this paper our recent results on batterymodelling are presented. In the presented work Li-Po batterieshave been examined. The methodology of measuring batteriesis discussed in details. The measurement setup is shown onblock diagram level. The paper demonstrates how themeasured results are evaluated, and how a mathematical modelcan be created, which is ready to use for simulations andprediction algorithm developments for devices supplied fromLi-Po batteries.I. INTRODUCTIONNowadays energy issues are getting more and moreimportant. Energy is supplied mostly by batteries for mobiledevices. The lifetime of the battery depends not only on thepower consumption of the devices. Energy efficiencyenhancement is a very important issue in such sensornetworks and sensor nodes that have to tolerate extremeambient temperatures (e.g. meteorology stations and spaceapplications). The active controlling of the battery’stemperature is in most cases not, or only partly possible, butone of the greatest effect on the cells capacity and lifetime isthe temperature. In this case, it is very important to haveextensive knowledge about the operation of the batteries attemperatures lower than 0° C.To efficiently work with batteries, lifetime estimations,prediction-algorithms, energy-aware methodologies areneeded, and these requires models. The characterization ofthe batteries used in the areas depicted above is a greatchallenge. It is important to know the amount of charge thathas been taken from the battery and its behavior in a verylarge temperature range is also needed to be understood. Forthat very reason we developed a new measure arrangementthat allows for the exploration of this problem.The energy efficiency of the Lithium-based batteries canbe determined at low temperatures with the help of ourmethodology. Using the obtained models the energy balanceof applications can be calculated. Furthermore the energybalance will be optimized for semi-active batterytemperature controlling methods.Differing from the previous works, a new type of batterieswas examined from the viewpoint of the temperature andload dependence. The experiences we had earlier collectedby Ni-MH batteries, supports us to expand our cognition byLithium-based batteries.II.METHODOLOGY OF MEASURING BATTERIESAll that we know about a rechargeable battery is its outputvoltage and the temperature. We can extend this knowledgewith the state of the charge in the battery. For example firstwe can fully charge the battery, and monitoring the battery’sstate is very important, because this way are able to tell howmuch and how the energy was drawn out from the cell. Thisis very useful information, because there is a great emphasison the methodology of discharging the battery, as the cellbehaves differently due to the rate capacity effect [3].Another important property of the rechargeable batteries isthe recovery effect: after a greater load leaving the cell inidle (load is switched off) the output voltage starts to risewith the time. This is due to the diffusion of materialsstoring the energy inside the cell. Behind the rise of thevoltage stands real recovery, further amount of energyreleases which lets the users more charge to pump out formthe cell [2].III.MEASUREMENT SETUPThe setup has to be able to measure Li-Ion and Li-Pobatteries at low ambient temperature. For this purpose wehave chosen a thermal test chamber with streaming air andregulated temperature. We have placed fully chargedbatteries into the chamber, and then fully discharged them.This means, that the charging of the batteries was not carriedout at low temperature, it was done in room temperature.The discharging current was always constant, i.e.independently of the voltage of the cell, we forced the samecurrent from the battery during a discharge cycle.Measurements could be constant current experiments, but wealso performed periodically varying (pulsing) and impulsetype load discharge measurements.The measurements were made with an equipmentspecially designed for Li-Ion battery dischargemeasurements. This was developed at our department [ref.].It consists of two main parts: an analogue and a digital part.The cell joins to the analogue part with four wires. The fourwires are important for the accurate measurement of thecell's output voltage, the big charging/discharging currentflows on two of the wires through the power supply's currentgenerators and the battery cell, and on the other two we©<strong>EDA</strong> <strong>Publishing</strong>/THERMINIC 2008 128ISBN: 978-2-35500-008-9
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