every thermal block. When the final floorplan has beenexported, the more accurate thermal model like tile-basedthermal model can be used to calculate. In the intermediatesteps, the efficient block-level thermal model can be used tosave temperature calculation time. In conclusion, ourblock-level thermal model is an efficient model fortemperature calculation for floorplan stage in VLSI designflow.TABLE ICases Comparison between block-level floorplan and tile-based floorplanTest Case Case1 Complexity Case2 Complexity# Tiles 5 125 18 5832# Blocks 25 15625 130 2197000Speedup 125 37724-26 September 2008, Rome, Italytotal amount of thermal blocks. In conclusion, the executingtime will be very terrible when the gap continuously growsup.VI. EXPERIMENTAL RESULTSThe block-level thermal model in the paper wasimplemented in C++. The experimental environment isCeleron(R) M Processor 1.5GHz and 1 GB RAM and usedACKNOWLEDGMENTfive floorplan benchmarks including atpe, xerox, hp, ami33,and ami49. The ambient temperature is 25 ° C and power6 2 6 2density is between10 W / m ~ 7 × 10 W / m . In the TABLEII, the experimental results for apte, xerox, ,hp, ami33, andREFERENCESami49 benchmarks are shown. “Benchmark” denotes thenames for the floorplan benchmarks, “Blocks” is total amountof blocks (functional + space blocks) for every benchmark,“Area” is the floorplan region area, “PTemp” is the highesttemperature, “LTemp” is the lowest temperature, “DTemp” isthe difference between the highest and lowest temperature,“Timing” denotes the execution time for all benchmarks tocalculate temperature, “Tile” is the total amount of tiles, and“Tiles/Blocks” is the values for Tiles/Blocks.Exception hp, execution time for all benchmarks is grownwhen block increasing. Because the adjacent relation for hp issimpler than others, the thermal conductivity matrix can bereduced much computational time. The peak temperature ismainly affected by the power value of every thermal blockbecause the power is power_density × thermal_block_volume.The volume for every thermal block in different benchmarkshas great gap therefore the exported peak temperature is alsovery different. Our purpose is to highlight the temperaturedifferences for the same benchmark.When let tile size is 30× 30 referenced [8], the fivebenchmarks can be partitioned into tile-based floorplan. Thevalues of “Tiles/Blocks” are very large as shown in TABLE II.When the floorplan area and design complexity grow up, thegap will rapidly grow. Although the executing time does notbe cubic growing, the computational time has direct ratio withTABLE IIExperimental Results for apt, xerox, hp, ami33m and ami492VII.CONCLUSIONSIn this paper, the proposed block-level thermal model fortemperature calculation really can save computational time.The executing time is grown up with the total amount ofblocks in our model and the computational complexity fortile-based thermal model also has direct ratio with totalamount of tiles. When the gap between total amount of blocksand tiles rapidly grows up, the temperature calculation time ofour model is more efficient than tile-based thermal model inthe floorplan stage. Meanwhile, block-level thermal modelprovides the useful temperature difference between everythermal block. In conclusion, our block-level thermal modelcan be used to save the temperature calculating time infloorplan stage and shorten the VLSI design flow.This research is supported by National Science Council,Taiwan. The contract numbers are NSC 96-2220-E-009-017and NSC 97-2220-E-009-005.[1] Kirk D. Hagen. Heat Transfer with Applications. Prentice Hall,1999[2] Wei Huang, Shougata Ghosh, Siva Velusamy, KarthikSankaranarayana, Kevin Skadron, and Mircea R. Stan, “HotSpot:A Compact Thermal Modeling Methodology for Early-StageVLSI Design,” IEEE Trans. on Very Large Scale Integration(VLSI) Systems, 2006, pp. 501-513[3] Jason Cong, Jie Wei, and Yan Zhang, “A Thermal-DrivenFloorplanning Algorithm for 3D ICs,” IEEE/ACM InternationalConference on Computer-Aided Design, pp. 306-313, 2004[4] Eric Wong and Sung Kyu Lim, “3D Floorplanning with ThermalVias,” Design, Automation and Test in Europe, pp. 6-10, 2006[5] Zhuoyuan Li, Xianlog Hong, Qiang Zhou, Shan Zeng, Jinian Bian,Hannah Yang, Vijay Pitchumani, and Chung-Kuan Cheng,“Integrating Dynamic Thermal Via Planning with 3DFloorplanning Algorithm,” International Symposium on PhysicalDesign, pp. 178-185, 2006[6] X. Tang, R. Tian, and D. F. Wong, “Optimal Redistribution ofWhite Space for Wire Length Minimization,” Asia and SouthPacific Design Automation Conference, pp. 412-417, 2005[7] Eric Wong and Sung Kyu Lim, “Decoupling-Capacitor Planningand Sizing for Noise and Leakage Reduction,” IEEE Trans. onComputer-Aided Design of Integrated Circuits and Systems, pp.2023-2034, 2007[8] Xin Li, Yuchu Ma, Xianlong Hong, Sheqin Dong, and Jason Cong,“LB Based White Space Redistribution for Thermal Via Planningand Performance Optimization in 3D ICs,” Asia and South PacificDesign Automation Conference, pp. 209-211, 2008Benchmark Blocks (FB+SB) Area ( μ m ) PTemp( ° C ) LTemp ( ° C ) DTemp ( ° C ) Time ( sec ond ) Tiles Tiles/BlocksApte 9+3 = 12 9478*12644 31.0181 26.2414 4.7767 0.00023 316*422=133352 1.11E+04xerox 10+9 = 19 3864*5264 78.1498 45.6418 32.508 0.00074 129*176=22704 1.19E+03Hp 11+7 = 18 4116*2450 79.2265 47.6251 31.6014 0.00006 138*82=11316 6.29E+02ami33 33+19 = 52 1134*1064 27.2627 25.6062 1.6565 0.00109 38*36=1368 2.63E+01ami49 49+45 = 94 5670*5152 45.5638 29.6804 15.8834 0.00604 189*172=32508 3.46E+02©<strong>EDA</strong> <strong>Publishing</strong>/THERMINIC 2008 63ISBN: 978-2-35500-008-9
24-26 September 2008, Rome, ItalyMultiscale 3D Thermal Analysis of Analog ICs:from Full-Chip to Device LevelMarek Turowski 1 , Steven Dooley 2 , Ashok Raman 1 , and Matthew Casto 21CFD Research Corporation (CFDRC), 215 Wynn Drive, Huntsville, Alabama 35805, USA2Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Ohio 45433, USAAbstract - We have developed and employed an automatedmulti-scale modeling approach to investigate thermal issues inanalog integrated circuits (ICs) and to enable “thermallyaware” design thereof. Thermal analysis from full-chip scaledown to the single transistor level was made possible with thisapproach utilizing the finite volume three-dimensional (3D)numerical technique. We have developed new methods andtools that import GDSII layout of entire IC and generate 3Dmodel. The tool provides a 3D temperature map that can showthermal gradients across a chip, as well as local temperaturedistribution (hot spots) down to single transistor level. Thisallows introducing temperature back into design process. Ourmethod and tools are demonstrated on a couple of radiofrequency(RF) chips. The multiscale modeling has beenverified with infrared temperature measurements.Key Words - three-dimensional, modeling, simulation, layout,temperature.I. INTRODUCTIONHeat generation in integrated circuits (ICs) and resultingelevated temperatures adversely affect semiconductordevices and circuits in terms of both functional operation andreliability. In analog and radio-frequency (RF) integratedcircuits, the cutoff frequency of transistors rapidly degradeswith increasing temperature due to increased carrierscattering rate [1]. The increasing local power density ofmodern chips and their growing lateral dimensions lead totemperature gradients that affect delays, power, and signalintegrity. The observed trends clearly indicate theimportance of the suppression of the thermal effects,preferably yet during the electrical design process.Our earlier works [2], [3], [4] demonstrated that onlymajor high-thermal-conductivity paths to substrate and heatsink are significant for full-chip scale thermal results. In thiswork, we present our approach and examples of generatingfull-chip 3D thermal model, with automated elimination ofthe minuscule layout elements that do not affect thermalresults. Our new method and tools provide a 3D temperaturemap that can show thermal gradients across a chip, as well aslocal temperature (hot spots) down to single transistor level.The modeling tools have been tested and demonstrated onseveral realistic RF ICs based on a high performance SiGeBiCMOS technology, and verified with infrared temperaturemeasurements.II. 3D MODELING DIRECTLY FROM IC LAYOUTThe thermal simulation is performed using a detailed 3Dfinite volume based solver, CFD-ACE+ [5]. To enableautomated generation of a full-chip 3D model and mesh forthe thermal solver, we have adapted and enhanced theCFDRC Micromesh software [6]. It is used to import the ICdesign layouts (in GDSII formats), create automatically a 3Dmodel from the selected layout part (sub-circuit or full chip),and generate the 3D simulation grid.However, full GDSII layouts of real chips are very largesets of data, containing many thousands or even millions ofelements, including semiconductor active devices, passivedevices, metallic interconnects, vias, bonds, etc. With thesub-micron dimensions in modern ICs, and full-chip sizes ofseveral millimeters, achieving the required resolution of anentire 3D mesh fully including all the IC layout details iscomputationally impossible. This is true even for analog/RFICs, which contain relatively smaller number of elementsthan digital ICs. An example of such situation is illustratedin Figure 1, for one of our test chips (IC1). In order toresolve all details from this GDSII layout, a 3D mesh of thefull chip would require more than 10 16 mesh cells, which istotally impossible to handle by present computational tools.Model Scale: IC1 ≈ 8000 um x 2300 um, IC1 Layout Resolution: 0.01 um=> Needed Mesh Resolution ~ 8e5 (in 1D) !Bump Bond Pads(red)For Official Use OnlyFigure 1. Example an RF IC chip (“IC1”) on a substrate. The size of IC1 isapproximately 8000 μm by 2300 μm, and the GDSII layout elements aredrawn with resolution 0.01 μm – a fully resolved 3D mesh is infeasible.Our works [2], [3] demonstrated that only the major highthermal-conductivitypaths to substrate and heat sink (suchas bonds and thick vias) are significant for full-chip-scalethermal results. In the RF IC cases analyzed here, these mostimportant heat conducting paths to heat sink are the bumpbonds between the flipped (face down) chip and the multi-11©<strong>EDA</strong> <strong>Publishing</strong>/THERMINIC 2008 64ISBN: 978-2-35500-008-9
- Page 1 and 2:
http://cmp.imag.fr/conferences/ther
- Page 3 and 4:
24-26 September 2008, Rome, Italy©
- Page 5 and 6:
24-26 September 2008, Rome, Italy©
- Page 7 and 8:
24-26 September 2008, Rome, Italy©
- Page 9 and 10:
24-26 September 2008, Rome, ItalyBL
- Page 11 and 12:
24-26 September 2008, Rome, ItalySe
- Page 13 and 14:
24-26 September 2008, Rome, ItalyED
- Page 15 and 16:
Staggered Cartesian meshes tolerate
- Page 17 and 18:
VIII. THE CASE FOR MCAD-EMBEDDED EC
- Page 19 and 20:
24-26 September 2008, Rome, ItalyTr
- Page 21 and 22:
solution to the eikonal equation(
- Page 23 and 24: 24-26 September 2008, Rome, ItalyS
- Page 25 and 26: 24-26 September 2008, Rome, ItalyTr
- Page 27 and 28: 24-26 September 2008, Rome, Italyda
- Page 29 and 30: q (RthΣ, t)q (R th , t )10.80.60.4
- Page 31 and 32: 24-26 September 2008, Rome, ItalyEv
- Page 33 and 34: 24-26 September 2008, Rome, Italy*R
- Page 35 and 36: 24-26 September 2008, Rome, Italy[7
- Page 37 and 38: 24-26 September 2008, Rome, ItalyNe
- Page 39 and 40: 24-26 September 2008, Rome, ItalyS=
- Page 41 and 42: 24-26 September 2008, Rome, ItalyVI
- Page 43 and 44: 24-26 September 2008, Rome, Italyth
- Page 45 and 46: 24-26 September 2008, Rome, Italypr
- Page 47 and 48: 24-26 September 2008, Rome, ItalyFi
- Page 49 and 50: 24-26 September 2008, Rome, ItalyPo
- Page 51 and 52: 24-26 September 2008, Rome, ItalyWL
- Page 53 and 54: 24-26 September 2008, Rome, ItalyTa
- Page 55 and 56: 24-26 September 2008, Rome, ItalyII
- Page 57 and 58: Thermal resistance (K/W)0.250.200.1
- Page 59 and 60: 24-26 September 2008, Rome, ItalyB.
- Page 61 and 62: temperatrue rise [K]76543210Sim0,00
- Page 63 and 64: 24-26 September 2008, Rome, ItalyCo
- Page 65 and 66: 24-26 September 2008, Rome, ItalyPr
- Page 67 and 68: 24-26 September 2008, Rome, ItalyPr
- Page 69 and 70: 24-26 September 2008, Rome, ItalyBl
- Page 71 and 72: conclusion, every tile is contacted
- Page 73: and B10), three space blocks (W4, W
- Page 77 and 78: After having determined the k eff v
- Page 79 and 80: 24-26 September 2008, Rome, ItalyVI
- Page 81 and 82: 24-26 September 2008, Rome, ItalyTh
- Page 83 and 84: PTjunc24-26 September 2008, Rome, I
- Page 85 and 86: tures - has been shown previously [
- Page 87 and 88: 24-26 September 2008, Rome, ItalyAu
- Page 89 and 90: IV.CONCLUSIONSMentor Graphics Exped
- Page 91 and 92: 24-26 September 2008, Rome, ItalyIn
- Page 93 and 94: III. HEDORIS SIMULATIONSThermal sim
- Page 95 and 96: 24-26 September 2008, Rome, Italytr
- Page 97 and 98: 24-26 September 2008, Rome, ItalyDe
- Page 99 and 100: 24-26 September 2008, Rome, ItalyII
- Page 101 and 102: datasheets, these values are usuall
- Page 103 and 104: 24-26 September 2008, Rome, Italyte
- Page 105 and 106: 24-26 September 2008, Rome, ItalyCo
- Page 107 and 108: 24-26 September 2008, Rome, Italy20
- Page 109 and 110: material to handle difficulties suc
- Page 111 and 112: 24-26 September 2008, Rome, ItalyAt
- Page 113 and 114: 24-26 September 2008, Rome, Italymo
- Page 115 and 116: heatspreaders deposited during the
- Page 117 and 118: 24-26 September 2008, Rome, ItalyTh
- Page 119 and 120: 24-26 September 2008, Rome, Italyla
- Page 121 and 122: Fig. 13 Transient of the output dio
- Page 123 and 124: 24-26 September 2008, Rome, ItalyIn
- Page 125 and 126:
chamber to calibrate the thermal te
- Page 127 and 128:
V.Table 2: FE-Simulation test-matri
- Page 129 and 130:
24-26 September 2008, Rome, ItalyCo
- Page 131 and 132:
24-26 September 2008, Rome, Italy(c
- Page 133 and 134:
Case coverSupercapacitor n°2Electr
- Page 135 and 136:
24-26 September 2008, Rome, Italyfr
- Page 137 and 138:
24-26 September 2008, Rome, ItalyTA
- Page 139 and 140:
24-26 September 2008, Rome, ItalyTh
- Page 141 and 142:
24-26 September 2008, Rome, Italych
- Page 143 and 144:
24-26 September 2008, Rome, ItalyDe
- Page 145 and 146:
Peltier control units (PCUs). The t
- Page 147 and 148:
24-26 September 2008, Rome, ItalyTh
- Page 149 and 150:
every step: the fewer cells the mor
- Page 151 and 152:
TABLE IIEffect of multiplication-bl
- Page 153 and 154:
24-26 September 2008, Rome, ItalyTh
- Page 155 and 156:
24-26 September 2008, Rome, ItalyRe
- Page 157 and 158:
Drain source leakage current (A)Rev
- Page 159 and 160:
24-26 September 2008, Rome, ItalyFP
- Page 161 and 162:
V IN =V DD /2Fig. 5. Short circuit
- Page 163 and 164:
24-26 September 2008, Rome, ItalyTh
- Page 165 and 166:
The overall objective of the NANOPA
- Page 167 and 168:
24-26 September 2008, Rome, ItalyRe
- Page 169 and 170:
predictions show that carbon nanotu
- Page 171 and 172:
24-26 September 2008, Rome, ItalyFl
- Page 173 and 174:
55. Campbell, R.C., S.E. Smith, and
- Page 175 and 176:
24-26 September 2008, Rome, ItalyCo
- Page 177 and 178:
24-26 September 2008, Rome, ItalyTh
- Page 179 and 180:
24-26 September 2008, Rome, ItalyEX
- Page 181 and 182:
24-26 September 2008, Rome, Italyen
- Page 183 and 184:
24-26 September 2008, Rome, ItalyKE
- Page 185 and 186:
An original three-step etch process
- Page 187 and 188:
with a network of built-in sensors
- Page 189 and 190:
24-26 September 2008, Rome, Italyan
- Page 191 and 192:
24-26 September 2008, Rome, ItalyFu
- Page 193 and 194:
24-26 September 2008, Rome, ItalyFi
- Page 195 and 196:
24-26 September 2008, Rome, ItalyFi
- Page 197 and 198:
24-26 September 2008, Rome, ItalyWe
- Page 199 and 200:
semiconductors is of the order of 1
- Page 201 and 202:
24-26 September 2008, Rome, ItalyDu
- Page 203 and 204:
transistor, through the bulk and be
- Page 205 and 206:
impedance behaviour and on the othe
- Page 207 and 208:
Tungstenmicro-heaterGas SensingMate
- Page 209 and 210:
Tungsten micro-heater resistance (
- Page 211 and 212:
24-26 September 2008, Rome, ItalyPo
- Page 213 and 214:
24-26 September 2008, Rome, ItalyT3
- Page 215 and 216:
24-26 September 2008, Rome, ItalyEv
- Page 217 and 218:
24-26 September 2008, Rome, ItalyD.
- Page 219 and 220:
24-26 September 2008, Rome, ItalyOn
- Page 221 and 222:
24-26 September 2008, Rome, ItalyAc
- Page 223 and 224:
24-26 September 2008, Rome, Italy
- Page 225 and 226:
24-26 September 2008, Rome, ItalyLO
- Page 227 and 228:
24-26 September 2008, Rome, Italymu
- Page 229 and 230:
24-26 September 2008, Rome, Italy(R
- Page 231 and 232:
24-26 September 2008, Rome, ItalyPr
- Page 233 and 234:
24-26 September 2008, Rome, ItalyPa
- Page 235 and 236:
24-26 September 2008, Rome, ItalyEl
- Page 237 and 238:
Temperature rise (°C)1,81,61,41,21
- Page 239 and 240:
i résistances carbone (A)i résist
- Page 241 and 242:
calculates the dissipation distribu
- Page 243 and 244:
in the next. It can also be used to
- Page 245 and 246:
allows creating special methods of
- Page 247 and 248:
OLED device (see Fig. 2.) provided
- Page 249 and 250:
24-26 September 2008, Rome, ItalyFi
- Page 251 and 252:
24-26 September 2008, Rome, ItalyIn
- Page 253:
24-26 September 2008, Rome, ItalyWa