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Online proceedings - EDA Publishing Association

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24-26 September 2008, Rome, Italythermodiode beyond 300°C was reported. The thermodiode iscapable of operating linearly at very high temperatures (upto500°C) and its characteristics match well with numerical andanalytical predictions. The piezo-junction effect within thethermodiode was shown to be negligible as opposed to singlecrystal silicon temperature sensors which are susceptible topiezo-resistive effects. The thermodiodes are fairly reliableeven after 100 hours continuous operation at 400 and 500°Cand the maximum deviations were 1-2 mV (~1°C). It was alsoshown that the thermodiodes are more stable than metal RTDsat high temperatures.ACKNOWLEDGMENTThe work has been supported by Engineering and PhysicalSciences Research Council (EPSRC) under the project no.EP/F004931/1.REFERENCES1. G. M. Meijer, “Thermal Sensor based on Transistors”, Sensors andActuators, vol. 10, pp. 103-125, 1986.2. R. A. Bianchi, F. V. D. Santos, J. M. Karam, B. Courtois, F.Pressecq, S. Sifflet, “CMOS-compatible smart temperaturesensors”, Microelectronics Journal, vol. 29, pp. 627-636, 1998.3. G. Wang and G. C. M. Meijer, “The temperature characteristics ofbipolar transistors fabricated in CMOS technology”, Sensors andActuators A, vol. 87, pp. 81-89, 2000.4. C. Falconi, M. Fratini, “CMOS microsystems temperature control”,Sensors and Actuators B, vol. 129, pp. 59-66, 2008.5. S. S. Ang, “High-temperature characteristics of epitaxial high-lowjunction n+-n-p+ silicon diodes”, Microelectronics Journal, vol. 26,pp. 375-382, 1995.6. Y. M. Shwarts, V. L. Borblik, N. R. Kulish, E. F. Venger, V. N.Sokolov, “Limiting characteristic of diode temperature sensors”,Sensors and Actuators A, vol. 86, pp. 197-205, 2000.7. S. Santra, P. K. Guha, M. S. Haque, S. Z. Ali, F. Udrea, “Silicondiode temperature sensors beyond 300 o C”, CAS conferenceSinaia, Romania, vol. 2, pp. 415 – 418, 2007.8. M. Graf, D. Barrettino, K. U. Kirstein, A. Hierlemann, “CMOSmicrohotplate sensor system for operating temperatures up to500°C,” Sensor and Actuator B, vol. 117, pp. 346-352, 2006.9. P. K. Guha, S. Z. Ali, C. C. C. Lee, F. Udrea, W. I. Milne, T. Iwaki,J. A. Covington, J. W. Gardner, “Novel design and characterizationof SOI CMOS micro-hotplates for high temperature gas sensors”,Sensor and Actuator B, vol. 127, pp.260-266, 2007.10. S. Z. Ali, P. K. Guha, C. C. C. Lee, F. Udrea, W. I. Milne, T.Iwaki, J. A. Covington, J. W. Gardner, “High temperature SOICMOS tungsten micro-heater” Proceedings of the 5th IEEEconference on sensors, 2006, Daegu, Korea, pp 847-850.Biography of the presenting author:Dr. Florin Udrea is a reader in Cambridge University workingin the field of power electronics and smart sensors. He haspublished over 240 papers in journals and internationalconferences and holds over 30 patents. He has co-founded twocompanies, one in the field of power integrated circuits(Camsemi) and one in the field of sensors (Cambridge CMOSSensors).©<strong>EDA</strong> <strong>Publishing</strong>/THERMINIC 2008 199ISBN: 978-2-35500-008-9

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