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- Page 29 and 30: q (RthΣ, t)q (R th , t )10.80.60.4
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- Page 57 and 58: Thermal resistance (K/W)0.250.200.1
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and B10), three space blocks (W4, W
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After having determined the k eff v
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PTjunc24-26 September 2008, Rome, I
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tures - has been shown previously [
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IV.CONCLUSIONSMentor Graphics Exped
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III. HEDORIS SIMULATIONSThermal sim
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datasheets, these values are usuall
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material to handle difficulties suc
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heatspreaders deposited during the
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Fig. 13 Transient of the output dio
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chamber to calibrate the thermal te
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V.Table 2: FE-Simulation test-matri
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24-26 September 2008, Rome, Italy(c
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Case coverSupercapacitor n°2Electr
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Peltier control units (PCUs). The t
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every step: the fewer cells the mor
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TABLE IIEffect of multiplication-bl
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Drain source leakage current (A)Rev
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V IN =V DD /2Fig. 5. Short circuit
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The overall objective of the NANOPA
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predictions show that carbon nanotu
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55. Campbell, R.C., S.E. Smith, and
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An original three-step etch process
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with a network of built-in sensors
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semiconductors is of the order of 1
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transistor, through the bulk and be
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impedance behaviour and on the othe
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Tungstenmicro-heaterGas SensingMate
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Tungsten micro-heater resistance (
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Temperature rise (°C)1,81,61,41,21
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i résistances carbone (A)i résist
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calculates the dissipation distribu
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in the next. It can also be used to
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allows creating special methods of
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OLED device (see Fig. 2.) provided
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