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Thixoforming : Semi-solid Metal Processing

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Figure 8.8 Coating concept for avoiding the softening of the steel substrate.<br />

the corrosion tests were carried out at the GHI (Institute of Mineral Engineering) and<br />

showed that only the oxides withstand the corrosion attacks from the semi-<strong>solid</strong> steel.<br />

Also, thermocycle tests were carried out at the MCh (Institute of Materials Chemistry)<br />

using HS 6-5-2 as a counterpart material. These tests showed no counterpart<br />

interaction with the bulk material Al2O3,Al2O3/SiO2 (mullite) and MgAl2O4.MgOand<br />

Y2O3-stabilized ZrO2 bulk materials were also tested and showed limited<br />

applicability for the thixoforming process. It is concluded that only oxide materials<br />

are suitable as potential coating systems. From the load profile shown in Figure 8.1, it<br />

is evident that the coatings need to protect the die s surface from abrasive and<br />

chemical wear. Oxidic ceramic coating materials often exhibit superior chemical<br />

resistance to other hard coatings [12].<br />

8.3<br />

PVD and PECVD Coating Technologies<br />

8.3 PVD and PECVD Coating Technologiesj249<br />

There are different methods for the application of thin-film coatings. PVD and<br />

PECVD offer different advantages and disadvantages. Hence both technologies were<br />

investigated within the Collaborative Research Centre (SFB) 289.<br />

PVD methods cover a range of thin-film deposition techniques, which include<br />

evaporation, laser ablation, vacuum arc-based deposition and many different modes<br />

of physical sputter deposition [13]. The PVD method used in the present work is<br />

magnetron sputtering (Figure 8.9), in which an electric field is applied between two<br />

electrodes immersed in an inert gas (argon) to create a plasma. One of these<br />

electrodes (the cathode) is the material source, the so-called target, and the chamber<br />

walls commonly act as the anode. The argon ions created in the plasma are attracted to<br />

the target (e.g. aluminium, zirconium) and sputter the latter, dislodging atoms [14].<br />

These atoms are subsequently transferred in a controlled manner in an evacuated<br />

chamber to the substrate where the film growth proceeds atomistically. The typical<br />

operating pressure for magnetron sputtering ranges between 0.1 and 3 Pa, which<br />

means there is a very low probability of chemical reactions in the plasma. The<br />

deposition and properties of the films made by magnetron sputtering depend on a<br />

variety of parameters, such as the energy and direction of the incident particles, the

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