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Thixoforming : Semi-solid Metal Processing

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256j 8 Tool Technologies for Forming of <strong>Semi</strong>-<strong>solid</strong> <strong>Metal</strong>s<br />

Table 8.2 Deposition parameters for TiAlN/g-Al2O3.<br />

Process parameters<br />

Etching<br />

phase<br />

Interlayer<br />

(Ti 0.5Al 0.5)N<br />

Top<br />

layer Al 2O 3<br />

Process pressure (Pa) 1 0.5 0.2–0.5<br />

Process time (s) 1800 3600 3600<br />

R.f. power (W) 100 — —<br />

R.f. frequency (MHz) 13.56 — —<br />

N2, O2 concentration (%) — 30 2–16<br />

Pulse parameters<br />

Pulse mode/pulse power (W) — Unipolar/500 Bipolar/800<br />

Pulse sequence (ton-/toff /tonþ/toffþ] (ms) — 5/25 5–13/5–13/5–13/5–13<br />

M.f. (kHz) — 33 19.2–50<br />

Pulse voltage (V) — 637 280–360<br />

Pulse current (A) — 0.8 0.9–2<br />

developed coatings. These investigations showed the stability of the g-Al2O3 up to<br />

1000 C [25]. To enhance the weak adhesion of crystalline Al2O3 (10 N scratch load<br />

without an interlayer), the developed TiAlN–g-Al2O3 system offers a critical scratch<br />

load up to 70 N on the hot working steel substrates. Figure 8.15 shows the deposited<br />

g-Al2O3 without an interlayer (Figure 8.15a) and with the TiAlN interlayer<br />

(Figure 8.15b).<br />

8.4.1.3 Summary of the Development of the TiAlN–g-Al2O3 Bilayer System<br />

By using pulsed power supplies, it is possible to deposit fine crystalline g-Al2O3 with<br />

good mechanical and tribological properties compared with an uncoated material.<br />

The coated samples are analysed by common thin-film techniques such as nanoindentation<br />

and XRD. The deposition of g-Al2O3 is limited to a very low deposition<br />

Figure 8.14 Hardness and coating thickness depending on the O 2 flow (coating time ¼ constant).

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