Bulletin 2010/45 - European Patent Office
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(H01L) I.1(1)<br />

YEDAVE, Sharad, N., Danbury, Connecticut<br />

06811, US<br />

BYL, Oleg, New Milford, Connecticut 06776,<br />

US<br />

KAIM, Robert, Brookline, Massachusetts<br />

02446, US<br />

ELDRIDGE, David, Liberty Hill, Texas 78642,<br />

US<br />

SERGI, Steven, Woodbury, Connecticut<br />

06798, US<br />

FENG, Lin, Danbury, Connecticut 06810, US<br />

BISHOP, Steven, E., Rio Rancho, New<br />

Mexico 87144, US<br />

OLANDER, Karl, W., Indian Shores, Florida<br />

33785, US<br />

TANG, Ying, Danbury, Connecticut 06811,<br />

US<br />

(74) ABG <strong>Patent</strong>es, S.L., Avenida de Burgos 16D<br />

Edificio Euromor, 28036 Madrid, ES<br />

H01L 21/265 → (51) H01L 31/042<br />

(51) H01L 21/266 (11) 2 248 154 A2*<br />

(25) En (26) En<br />

(21) 09717800.8 (22) 05.03.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS<br />

(86) US 2009/036232 05.03.2009<br />

(87) WO 2009/111665 2009/37 11.09.2009<br />

(88) 26.11.2009<br />

(30) 05.03.2008 US 33873<br />

04.03.2009 US 397634<br />

(54) • VERWENDUNG VON VERKETTETEN<br />

IMPLANTATEN IN SOLARZELLEN<br />

• USE OF CHAINED IMPLANTS IN SOLAR<br />

CELLS<br />

• UTILISATION D IMPLANTS ENCHAÎNÉS<br />

DANS DES CELLULES SOLAIRES<br />

(71) Varian Semiconductor Equipment Associates,<br />

35 Dory Road, Gloucester, MA 01930,<br />

US<br />

(72) BATEMAN, Nicholas, P.t., Reading MA<br />

01867, US<br />

MURPHY, Paul, J., Reading MA 01867, US<br />

SULLIVAN, Paul, Wenham MA 01984, US<br />

GUPTA, Atul, Beverly MA 01915, US<br />

(74) Becker Kurig Straus, <strong>Patent</strong>anwälte Bavariastrasse<br />

7, 80336 München, DE<br />

(51) H01L 21/268 (11) 2 248 155 A2*<br />

(25) En (26) En<br />

(21) 09717986.5 (22) 27.02.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS<br />

(86) US 2009/035537 27.02.2009<br />

(87) WO 2009/111326 2009/37 11.09.2009<br />

(88) 07.01.<strong>2010</strong><br />

(30) 29.02.2008 US 32781 P<br />

05.11.2008 US 111518 P<br />

(54) • BLITZLICHTAUSHEILUNG FÜR DÜNN-<br />

FILME<br />

• FLASH LIGHT ANNEALING FOR THIN<br />

FILMS<br />

• RECUIT PAR LUMIERE FLASH POUR<br />

FILMS MINCES<br />

(71) The Trustees of Columbia University in the<br />

City of New York, 412 Low Memorial Library<br />

535 West 116th Street, New York, New York<br />

10027, US<br />

(72) IM, James, S., New York NY 10025, US<br />

VAN DER WILT, Paul, C., New York NY<br />

10027, US<br />

CHUNG, Ui-Jin, Fort Lee NJ 07024, US<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(74) Lawrence, John, et al, Barker Brettell LLP<br />

100 Hagley Road, Edgbaston Birmingham<br />

B16 8QQ, GB<br />

(51) H01L 21/28 (11) 2 248 156 A1*<br />

(25) En (26) En<br />

(21) 08743614.3 (22) 28.02.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

AL BA MK RS<br />

(86) US 2008/055395 28.02.2008<br />

(87) WO 2009/108201 2009/36 03.09.2009<br />

(54) • HALBLEITERSUBSTRAT-KONTAKT-<br />

DURCHGANGSLOCH<br />

• SEMICONDUCTOR SUBSTRATE CONTACT<br />

VIA<br />

• TROU D'INTERCONNEXION DE CONTACT<br />

D'UN SUBSTRAT DE SEMI-CONDUCTEUR<br />

(71) Hewlett-Packard Development Company, L.<br />

P., 114<strong>45</strong> Compaq Center Drive West,<br />

Houston, TX 77070, US<br />

(72) BURTON, Gregory, N., Vancouver, WA<br />

98683, US<br />

MIKULAN, Paul, I., Carrollton, TX 75006, US<br />

(74) Zimmermann, Tankred Klaus, Schoppe,<br />

Zimmermann, Stöckeler Zinkler & Partner P.<br />

O. Box 246, 82043 Pullach, DE<br />

H01L 21/302 → (51) C09G 1/02<br />

H01L 21/302 → (51) H05K 1/11<br />

H01L 21/306 → (51) C09K 5/04<br />

H01L 21/306 → (51) H01J 37/08<br />

H01L 21/316 → (51) H01L 21/762<br />

H01L 21/324 → (51) H01L 21/00<br />

(51) H01L 21/335 (11) 2 248 157 A1*<br />

G06N 1/00 G01N 24/10<br />

H01L 21/8238<br />

(25) En (26) En<br />

(21) 09709809.9 (22) 11.02.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS<br />

(86) AU 2009/000155 11.02.2009<br />

(87) WO 2009/100483 2009/34 20.08.2009<br />

(30) 11.02.2008 AU 2008900616<br />

(54) • STEUERUNG UND AUSLESEN VON<br />

ELEKTRONEN- ODER LÖCHERSPINN<br />

• CONTROL AND READOUT OF ELECTRON<br />

OR HOLE SPIN<br />

• COMMANDE ET LECTURE DE SPIN<br />

D'ÉLECTRON OU DE TROU<br />

(71) Qucor Pty Ltd, Rupert Myers Bldg Level 2<br />

Gate 14 Barker Street, Sydney, New South<br />

Wales 2052, AU<br />

(72) MORELLO, Andrea, Surry Hills NSW <strong>2010</strong>,<br />

AU<br />

DZURAK, Andrew, Steven, Darlinghurst NSW<br />

<strong>2010</strong>, AU<br />

HUEBL, Hans-Gregor, 80538 Munich, DE<br />

CLARK, Robert, Graham, Balgowlah Heights<br />

NSW 2093, AU<br />

WILLEMS VAN BEVEREN, Laurens, Henry,<br />

NSW 2052, AU<br />

HOLLENBERG, Lloyd, Christopher, Leonard,<br />

Camberwell VIC 3124, AU<br />

JAMIESON, David, Norman, Eltham VIC<br />

3095, AU<br />

ESCOTT, Christopher, Randwick NSW 2031,<br />

AU<br />

152<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>45</strong>/<strong>2010</strong>) 10.11.<strong>2010</strong><br />

(74) Brunner, Michael John, Gill Jennings & Every<br />

LLP Broadgate House 7 Eldon Street,<br />

London EC2M 7LH, GB<br />

(51) H01L 21/336 (11) 2 248 158 A2*<br />

H01L 29/78<br />

(25) En (26) En<br />

(21) 09709655.6 (22) 09.02.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS<br />

(86) US 2009/033522 09.02.2009<br />

(87) WO 2009/102651 2009/34 20.08.2009<br />

(88) 15.10.2009<br />

(30) 14.02.2008 US 65759<br />

29.04.2008 US 125892<br />

(54) • EDGE-BESTIMMUNG MIT VERBESSERTER<br />

DURCHSCHLAGSPANNUNG<br />

• EDGE TERMINATION WITH IMPROVED<br />

BREAKDOWN VOLTAGE<br />

• TERMINAISON DE BORD À TENSION DE<br />

CLAQUAGE AMÉLIORÉE<br />

(71) Maxpower Semiconductor, Inc., 675 Regas<br />

Drive, Campbell, California 95008, US<br />

(72) ZENG, Jun, Torrance CA 90505, US<br />

DARWISH, Mohamed, N., Campbell CA<br />

95008, US<br />

SU, Shih-Tzung, Shulin City Taipei County<br />

23853, TW<br />

(74) Jump, Timothy John Simon, et al, Venner<br />

Shipley LLP 20 Little Britain, London EC1A<br />

7DH, GB<br />

(51) H01L 21/336 (11) 2 248 159 A2*<br />

H01L 29/78<br />

(25) En (26) En<br />

(21) 09709886.7 (22) 10.02.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS<br />

(86) US 2009/033631 10.02.2009<br />

(87) WO 2009/102684 2009/34 20.08.2009<br />

(88) 05.11.2009<br />

(30) 14.02.2008 US 65759 P<br />

(54) • HALBLEITERBAUELEMENTESTRUKTUREN<br />

UND DIESBEZÜGLICHE PROZESSE<br />

• SEMICONDUCTOR DEVICE STRUCTURES<br />

AND RELATED PROCESSES<br />

• STRUCTURES DE DISPOSITIFS À SEMI-<br />

CONDUCTEURS ET PROCÉDÉS S'Y RAP-<br />

PORTANT<br />

(71) Maxpower Semiconductor, Inc., 675 Regas<br />

Drive, Campbell, California 95008, US<br />

(72) ZENG, Jun, Torrance CA 90505, US<br />

DARWISH, Mohamed, N., Campbell CA<br />

95008, US<br />

(74) Jump, Timothy John Simon, et al, Venner<br />

Shipley LLP 20 Little Britain, London EC1A<br />

7DH, GB<br />

(51) H01L 21/336 (11) 2 248 160 A1*<br />

H01L 29/786<br />

(25) En (26) En<br />

(21) 09716248.1 (22) 02.03.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS<br />

(86) JP 2009/054355 02.03.2009<br />

(87) WO 2009/110623 2009/37 11.09.2009<br />

(30) 06.03.2008 JP 2008056284<br />

(54) • VERFAHREN ZUR BEHANDLUNG EINES<br />

HALBLEITERELEMENTS<br />

• METHOD OF TREATING SEMICONDUCTOR<br />

ELEMENT

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