Bulletin 2010/45 - European Patent Office
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Bulletin 2010/45 - European Patent Office

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(H01L) I.1(1)<br />

KRISHNAN, Shankar, Dublin D7, IE<br />

LAGROTTA, Richard, Thomas, Livingston NJ<br />

07039, US<br />

PICOT, Walter, J., Boonton Township NJ<br />

07005, US<br />

(74) Michalski Hüttermann & Partner <strong>Patent</strong>anwälte,<br />

Neuer Zollhof 2, 40221 Düsseldorf, DE<br />

(51) H01L 23/50 (11) 2 248 168 A1*<br />

(25) En (26) En<br />

(21) 09715532.9 (22) 10.02.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS<br />

(86) US 2009/033607 10.02.2009<br />

(87) WO 2009/108482 2009/36 03.09.2009<br />

(30) 27.02.2008 US 38156<br />

(54) • ENTWURF FÜR EINE DRUCKEMPFIND-<br />

LICHE MATRIZE UND VERFAHREN ZUR<br />

DIREKTEN VERDRAHTUNG MIT EINER<br />

INTEGRIERTEN PROGRAMMIERBAREN<br />

KOMPENSATIONS-SCHALTMATRIZE<br />

• PRESSURE SENSE DIE PAD LAYOUT AND<br />

METHOD FOR DIRECT WIRE BONDING TO<br />

PROGRAMMABLE COMPENSATION INTE-<br />

GRATED CIRCUIT DIE<br />

• CONFIGURATION DE PLAGES DE PUCE<br />

DÉTECTRICE DE PRESSION ET PROCÉDÉ<br />

DE CONNEXION DIRECTE DE FILS À UNE<br />

PUCE À CIRCUIT INTÉGRÉ PROGRAM-<br />

MABLE DE COMPENSATION<br />

(71) Honeywell International Inc., Law Department<br />

AB/2B 101 Columbia Road, Morristown,<br />

NJ 07962, US<br />

(72) BENTLEY, Ian, New Ipswich New Hampshire<br />

03071, US<br />

BRADLEY, Alistair D., Dublin Ohio 43106, US<br />

(74) Buckley, Guy Julian, <strong>Patent</strong> Outsourcing<br />

Limited 1 King Street, Bakewell Derbyshire<br />

DE<strong>45</strong> 1DZ, GB<br />

H01L 23/532 → (51) H01L 21/768<br />

(51) H01L 25/16 (11) 2 248 169 A2*<br />

H01L 27/06 H01L 49/00<br />

(25) En (26) En<br />

(21) 09714133.7 (22) 23.02.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS<br />

(86) KR 2009/000834 23.02.2009<br />

(87) WO 2009/107948 2009/36 03.09.2009<br />

(88) 04.02.<strong>2010</strong><br />

(30) 25.02.2008 KR 20080016935<br />

17.09.2008 KR 20080091265<br />

13.01.2009 KR 20090002732<br />

(54) • SCHALTKREIS ZUR VERHINDERUNG DER<br />

SELBSTERHITZUNG EINER METALLISO-<br />

LATORÜBERGANGSVORRICHTUNG UND<br />

VERFAHREN ZUR HERSTELLUNG EINER<br />

INTEGRIERTEN VORRICHTUNG FÜR DIE-<br />

SEN SCHALTKREIS<br />

• CIRCUIT FOR PREVENTING SELF-HEAT-<br />

ING OF METAL-INSULATOR-TRANSITION<br />

(MIT) DEVICE AND METHOD OF FABRI-<br />

CATING INTEGRATED-DEVICE FOR THE<br />

SAME CIRCUIT<br />

• CIRCUIT POUR PRÉVENIR L'AUTO-<br />

ÉCHAUFFEMENT D'UN DISPOSITIF DE<br />

TRANSITION MÉTAL-ISOLANT( MIT) ET<br />

PROCÉDÉ DE FABRICATION DE DISPOSI-<br />

TIF INTÉGRÉ POUR LEDIT CIRCUIT<br />

(71) Electronics and Telecommunications<br />

Research Institute, 161, Gajeong-dong,<br />

Yusong-gu, Daejeon-city 305-350, KR<br />

(72) Kim, Hyun-Tak, Daejeon-City 305-761, KR<br />

KIM, Bong-Jun, Daejeon-City 305-804, KR<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

YUN, Sun-Jin, Daejeon-City 305-761, KR<br />

KIM, Dae-Yong, Daejeon-City 301-807, KR<br />

(74) Betten & Resch, <strong>Patent</strong>anwälte Theatinerstrasse<br />

8, 80333 München, DE<br />

(51) H01L 27/00 (11) 2 248 170 A1*<br />

(25) En (26) En<br />

(21) 08730598.3 (22) 25.02.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

AL BA MK RS<br />

(86) US 2008/054828 25.02.2008<br />

(87) WO 2009/108182 2009/36 03.09.2009<br />

(54) • SYSTEM UND VERFAHREN FÜR EIN<br />

EMPFINDLICHES BILDSENSORARRAY<br />

MIT HOHEM DYNAMIKUMFANG<br />

• SYSTEM AND METHOD FOR A HIGH<br />

DYNAMIC RANGE IMAGE SENSOR SEN-<br />

SITIVE ARRAY<br />

• SYSTÈME ET PROCÉDÉ POUR UN<br />

RÉSEAU SENSIBLE DE DÉTECTEURS<br />

D'IMAGE À PLAGE DYNAMIQUE ÉLEVÉE<br />

(71) Davidovici, Sorin, 160 Main Street, Oceanport,<br />

NJ 07757, US<br />

(72) Davidovici, Sorin, Oceanport, NJ 07757, US<br />

(74) Rickard, David John, Ipulse 26 Mallinson<br />

Road, London SW11 1BP, GB<br />

(51) H01L 27/04 (11) 2 248 171 A2*<br />

H01L 27/10 H01L 21/02<br />

(25) En (26) En<br />

(21) 09715046.0 (22) 27.01.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS<br />

(86) US 2009/032119 27.01.2009<br />

(87) WO 2009/108438 2009/36 03.09.2009<br />

(88) 29.10.2009<br />

(30) 26.02.2008 US 37560<br />

(54) • HALBLEITERKONSTRUKTIONEN UND<br />

VERFAHREN ZUR HERSTELLUNG VON<br />

HALBLEITERKONSTRUKTIONEN<br />

• SEMICONDUCTOR CONSTRUCTIONS,<br />

AND METHODS OF FORMING SEMICON-<br />

DUCTOR CONSTRUCTIONS<br />

• CONSTRUCTIONS SEMI-CONDUCTRICES<br />

ET PROCEDES DE FORMATION DE CONS-<br />

TRUCTIONS SEMI-CONDUCTRICES<br />

(71) Micron Technology, Inc., 8000 South Federal<br />

Way, Boise, ID 83716, US<br />

(72) BENSON, Russell, A., Boise, ID 83709, US<br />

(74) Hackett, Sean James, Marks & Clerk LLP<br />

Alpha Tower Suffolk Street, Queensway<br />

Birmingham B1 1TT, GB<br />

(51) H01L 27/04 (11) 2 248 172 A2*<br />

(25) En (26) En<br />

(21) 09715944.6 (22) 16.01.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS<br />

(86) US 2009/031204 16.01.2009<br />

(87) WO 2009/108410 2009/36 03.09.2009<br />

(88) 29.10.2009<br />

(30) 27.02.2008 US 38146<br />

(54) • WIDERSTANDSGETRIGGERTER SCHUTZ<br />

VOR ELEKTROSTATISCHEN ENTLADUN-<br />

GEN<br />

• RESISTOR TRIGGERED ELECTROSTATIC<br />

DISCHARGE PROTECTION<br />

• PROTECTION CONTRE LES DECHARGES<br />

ELECTROSTATIQUES DECLENCHEE PAR<br />

UNE RESISTANCE<br />

(71) Freescale Semiconductor, Inc., 6501 William<br />

Cannon Drive West, Austin, TX 78735, US<br />

154<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>45</strong>/<strong>2010</strong>) 10.11.<strong>2010</strong><br />

(72) ZHAN, Rouying, Gilbert Arizona 85234, US<br />

GILL, Chai Ean E., Chandler Arizona 85225,<br />

US<br />

WHITFIELD, James D., Gilbert Arizona<br />

85234, US<br />

XU, Hongzhong, Gilbert Arizona 85233, US<br />

(74) Ferro, Frodo Nunes, et al, Freescale Semiconducteurs<br />

France SAS c/o Impetus IP<br />

Limited Suite 57a, Basepoint Business Park<br />

Caxton Close, Anodver, Hampshire SP10<br />

3FG, GB<br />

H01L 27/06 → (51) H01L 25/16<br />

(51) H01L 27/085 (11) 2 248 173 A1*<br />

(25) En (26) En<br />

(21) 08843511.0 (22) 29.10.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

AL BA MK RS<br />

(86) US 2008/081556 29.10.2008<br />

(87) WO 2009/058842 2009/19 07.05.2009<br />

(30) 30.10.2007 US 983652 P<br />

(54) • HOCHLEISTUNGSFÄHIGE HETEROSTRUK-<br />

TUR-FET-BAUELEMENTE UND VERFAH-<br />

REN<br />

• HIGH-PERFORMANCE HETEROSTRUC-<br />

TURE FET DEVICES AND METHODS<br />

• TRANSISTORS À EFFET DE CHAMP À<br />

HÉTÉROSTRUCTURE À PERFORMANCE<br />

ÉLEVÉE ET PROCÉDÉS<br />

(71) Moxtronics, Inc., 1309 Elsdon Court,<br />

Columbia, MO 65203, US<br />

(72) RYU, Yungryel, Columbia MO 65203, US<br />

LEE, Tae-seok, Columbia MO 65203, US<br />

LUBGUBAN, Jorge, Columbia MO 65203, US<br />

WHITE, Henry, W., Columbia MO 65203, US<br />

(74) Lane, Cathal Michael, et al, Tomkins & Co. 5<br />

Dartmouth Road, Dublin 6, IE<br />

H01L 27/10 → (51) H01L 27/04<br />

(51) H01L 27/146 (11) 2 248 174 A1*<br />

H01L 31/10<br />

(25) En (26) En<br />

(21) 09715460.3 (22) 20.02.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS<br />

(86) JP 2009/053614 20.02.2009<br />

(87) WO 2009/107755 2009/36 03.09.2009<br />

(30) 28.02.2008 JP 2008048412<br />

(54) • FESTKÖRPERBILDGEBUNGSVORRICH-<br />

TUNG UND VERFAHREN ZU IHRER HER-<br />

STELLUNG<br />

• SOLID-STATE IMAGING DEVICE AND<br />

MANUFACTURING METHOD THEREOF<br />

• DISPOSITIF D'IMAGERIE A SEMICON-<br />

DUCTEURS ET SON PROCEDE DE FABRI-<br />

CATION<br />

(71) Kabushiki Kaisha Toshiba, 1-1 Shibaura 1chome,<br />

Minato-ku Tokyo 105-8001, JP<br />

(72) YAMASHITA, Hirofumi, Minato-ku, Tokyo<br />

105-8001, JP<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastrasse 4, 81925 München, DE<br />

(51) H01L 27/15 (11) 2 248 175 A1*<br />

H01L 33/00<br />

(25) De (26) De<br />

(21) 09714298.8 (22) 25.02.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK TR<br />

AL BA RS

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