27.04.2013 Views

10. Appendix

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

682 <strong>Appendix</strong> C<br />

tion of alloying (see Fig. A4.4) or pressure, the deep DX state roughly follows<br />

an average (weighted by the degeneracy of each kind of valley) of the dependence<br />

of all the valleys. Because of this degeneracy in reciprocal space, itis<br />

energetically favorable for the electron wave function to become delocalized<br />

in reciprocal space while becoming localized in real space. This localization is<br />

achieved via a large lattice distortion. In other words, the defect electron can<br />

lower its energy by “trading-off” lattice energy with electronic energy. In order<br />

to maximize the gain in electronic energy the DX center attracts an extra<br />

electron when it undergoes lattice relaxation so that the total gain in electronic<br />

energy is doubled while the lattice energy spent remains the same. The idea<br />

that the DX center may be a negative-U center was proposed independently<br />

by Khachaturyan et al. [Khachaturyan89].<br />

Fig. A4.6 The displacement of the donor atoms or<br />

the surrounding host atoms in forming the DX center.<br />

In (a) and (c) the substitutional atoms are in<br />

their neutral states and located in tetrahedral sites.<br />

In (b) the substitutional Si atom is shown displaced<br />

along one of the Si-As bonds into a site where it is<br />

surrounded by only three As atoms. In (d) the substitutional<br />

S atom is not displaced but, instead, one<br />

of its three Ga neighbors is relaxed in a pattern<br />

similar to the Si donor in (b). Reproduced from<br />

[Chadi88].<br />

A4.1.5 Experimental Evidence in Support of the Chadi-Chang Model<br />

The CCM was not immediately accepted because initial attempts to measure<br />

the large lattice relaxation associated with the DX center turned out<br />

to be quite difficult. On one hand, it was possible to introduce only around<br />

10 18 cm 3 of such centers. Techniques for measuring lattice displacements such<br />

as x-ray diffraction and extended x-ray absorption fine structures (or EXAFS)<br />

are not sensitive enough for low atomic number atoms like Si. Heavier atoms,<br />

like Sn, induce smaller lattice displacements. On the other hand, measurement<br />

of the -U properties of the DX centers was easier and the correctness of the<br />

CCM became accepted based on its correct prediction of the properties of the<br />

DX centers including their -U nature.<br />

The -U nature of the DX centers has now been established by several experiments.<br />

Perhaps the most convincing ones are those based on the concept<br />

of co-doping. As we noted earlier, most DX centers exhibit similar properties,

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!