10. Appendix

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770 Subject Index Quantum wires 470 Quasi-thermal equilibrium 225 Quasiparticle approach 67 R Radiative lifetime minority carrier 351 Radiative recombination 194, 346 – centers 349 – time 351 Raman – frequencies 350, 377 – modes of acoustic phonons in Cu 2O 416 – resonance at forbidden exciton in Cu 2O 408 – shift 377 – spectrometers 385 Raman excitation spectroscopies 386 Raman scattering 244, 345, 428 – and Fröhlich interaction in superlattices 515 – as a form of modulation spectroscopy 319 – breakdown of q-conservation 413 – by LA modes in GaAs/AlAs superlattice 514 – confined optical phonons 516 – interface modes 518 – interference in scattering amplitudes 413 – microscopic theory 394 – odd parity phonon in Cu 2O 409, 424 – polaritons 423 – selection rules 423 – – parity 379 – – zincblende-type crystals 381 – spontaneous 394 – stimulated 385, 395 – Stokes and Anti-Stokes scattering 377 – three phonons in Cu 2O 417, 418 – two phonons 377 – via deformation potential 426 – via Fröhlich interaction 426 – zone-center phonons 377 Raman spectra – (GaAs) 16(AlAs) 16 SL 519 – Ge monolayers 392 – interface mode in GaAs/AlAs 520 – phonon-polaritons 392 Raman spectroscopy – detector 387 – light source 385 – spectrometer 386 Raman tensor 378 – antisymmetric components 379 – symmetry properties 383, 424 – wurtzite crystal 423 – zincblende crystal 380 Raman-active transitions 47 Random alloy 192 Rayleigh scattering 375, 382 Reciprocal lattice 23 Recombination 226 Reduced ionic mass 297 Reduced mass of exciton 280 Reduced zone scheme 21, 109 Reflectance difference spectroscopy (RDS) 332 Reflectance 246 – GaAs 256, 316 – modulation 315 – normal incidence 250 – spectra 567 Reflection coefficient 246 Reflection High Energy Electron Diffraction (RHEED) 9, 10, 11 Reflection of light by lattice vibrations 298 – spectra of InAs, GaAs, InSb, GaSb, AlSb, InP 300 Reflection symmetry 20 Reflectivity – complex 249 – Reststrahlen region 299 – spectra 66 Reflectometer 251 Refractive index 246 Relaxation time 208 – approximation 206, 238 – momentun 209 Renormalization of bandgap at T = 0 341 Representations 33 – characters 34 – compatibility 49 – dimension 34 – equivalent 34, 36 – identity 36 – irreducible 34 – reducible 34 Resolvent operator 183 Resolving power of Raman spectrometers 386 Resonance Brillouin scattering 375, 403, 419 – in GaAs 421 Resonance Raman scattering 375, 399, 403 – allowed and forbidden 412 – at band continua 404 – at bound exciton 407 – at free excitons 406 – confined and IF modes in GaAs/AlAs MQW’s 510 – in CdS 407, 412 – in GaP 405 – multiphonon 410
Resonant Raman profile 403 Resonant state 291 – in deep centers 181 Resonant tunneling 526, 529, 581 – devices 527 – diode 228 – in double-barrier quantum well 524 – – GaAs/GaAlAs/GaAs 527 – – InGaAs/AlAs/InAs 533 Reststrahlen frequency 298, 429 Retardation 295, 338, 560 Rigid-ion model for lattice dynamics calculation 111 Rocksalt structure 3 Roosbroeck-Shockley relation 348 Rotational symmetries 20, 26 Rotoreflectance 332 Rutherford scattering 217, 218 Rydberg constant 167 – effective 176 – exciton 280–281 Rydberg Series 167 S Saddle points 262 Sampling depth 431 Saturation velocities 228 SbSI 1, 4 Scanning tunneling microscopy 458 Scattering – cross section 382, 383 – differential 383 – efficiency 382 – length 382 – of electromagnetic wave by inhomogeneities 244 – processes – – normal 216 – – umklapp 216 – rate of carriers by phonons 239 – time 206, 208, 471 – – in free carrier absorption 308 Scattering of carriers 206, 213 – by acoustic phonons 239, 308 – by impurities 217, 308 – by optical phonons 239, 308, 370 – in GaAs 213 Schönflies notation 26 Schrödinger equation – for hydrogenic impurities 166 – defect electron 185 Screened Coulomb potential 162, 217 Subject Index 771 Screening 117 Screening of ionic charges 117 Screening wave vector 212 Screw axis 28 Secondary electron emitter 437 Seismic waves 496 Selection rules 25, 46 – in Raman scattering 379 Selective excitation of photoluminescence 372 Selenium 1, 2, 157 Self-compensation in II–VI compounds 182 Self-organization 12 Sellmeier’s equation 293 Semi-insulating GaAs 1 Semiconducting diamond 1 Semimetals 1, 2 Seraphin coefficients 317, 340 Shallow donors – bound states 167 – electron wave function 169 Shallow impurities 159, 161, 170 – optical spectroscopy 569 Shallow-to-deep instability 170 Shear 124 – deformation potentials – – b * 148 – – d * 150 – – d' 153 – – d 0 153 Shell models 114 Short-range order 566 Si – absorption spectrum 274 – – due to P donors 312 – acceptor levels – – energies 178, 180, 181, 572 – – B, Al, Sb and In 570 – band bending in n- and p-doped Si from UPS 465 – band structure 53, 58 – Brillouin spectrum 402 – conduction band minima 128 – deep impurity energies 191 – deformation potentials – – conduction bands 130 – – valence bands 126, 153 – dielectric function 254, 264 – donor binding energy 172 – drift velocity 226 – electronic configuration 58 – electron-phonon interactions 135 – growth – – chemical vapor deposition 7
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Appendix A: Pioneers of Semiconduct
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Ultra-Pure Germanium 555 Ultra-Pure
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References Ultra-Pure Germanium 557
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Two Pseudopotential Methods: Empiri
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The Early Stages of Band-Structures
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Cyclotron Resonance and Structure o
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References Cyclotron Resonance and
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Optical Properties of Amorphous Sem
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Optical Spectroscopy of Shallow Imp
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On the Prehistory of Angular Resolv
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The Discovery and Very Basics of th
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The Birth of the Semiconductor Supe
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Number of papers 500 200 100 50 20
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Appendix B: Solutions to Some of th
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Solution to Problem 2.6 585 transfo
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⎧ ⎫ 2apple ⎪⎨ cos (y z)
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Partial solution to Problem 2.8 589
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Solution to Problem 2.16 Solution t
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Solution to Problem 2.20 597 to the
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Therefore the result of I ′ on
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Solution to Problem 3.2(c) Solution
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Solution to Problem 3.5 603 Similar
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Solution to Problem 3.7 (b and c) 6
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u3. The above equation can be reduc
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Solution to Problem 3.8 (a, c and d
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Solution to Problem 3.11(a,b and c)
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Solution to Problem 3.16 613 (1) Al
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Solution to Problem 3.17 Solution t
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Solution to Problem 3.17 617 forces
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Solution to Problem 4.1 619 the abo
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C dz ′ z ′ i° Solution to Pro
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R -R A y E’-E y E’-E R x Soluti
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Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
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Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
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A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
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Solution to Problem 8.9 661 of 19.5
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Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
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Chapter 2 693 and zinc-blende group
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Chapter 3 695 Inelastic x-ray Scatt
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Chapter 4 697 results from a better
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Chapter 5 699 K. Alberi, K. M. Yu,
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Chapter 5 701 P. Ramvall, N. Carlss
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Chapter 6 Ab initio calculations of
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Chapter 6 705 Strain-induced birefr
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Chapter 7 707 S. Baroni, S. de Giro
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Chapter 7 709 W. Windl, K. Karch, P
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Chapter 8 711 Strain Shift Coeffici
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Chapter 9 713 Z. J. Zhao, F. Liu, L
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Chapter 9 715 S. F. Ren, W. Cheng,
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Chapter 9 717 V. P. Gusynin, S. G.
Page 168 and 169: 720 References tions II. Misfitting
Page 170 and 171: 722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 192 and 193: 744 References 7.122 D. C. Reynolds
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 200 and 201: 752 References 9.68 J. P. Palmier:
Page 203 and 204: Subject Index A ·-Sn (gray tin) 95
Page 205 and 206: C c(2 × 8)(111) surface of Ge - di
Page 207 and 208: Dielectric function 117, 246, 253,
Page 209 and 210: Emission rate vs frequency in Ge 34
Page 211 and 212: Galena (PbS) 1 Gamma-ray detectors
Page 213 and 214: Insulators 1 Integral quantum Hall
Page 215 and 216: - - vs T 222 - temperature dependen
Page 217: - frequency 253, 306, 335 - - of va
Page 221 and 222: - - LA phonons 512 - - LO phonons 5
Page 223: - structure 142 - symmetry operatio
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10. Appendix

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