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752 References 9.68 J. P. Palmier: Miniband transport and resonant tunneling in superlattices, in Resonant Tunneling in Semiconductors, ed. by. L. L. Chang (Plenum, New York 1991) pp. 361–375 E. E. Mendez, W. I. Wang, B. Ricco, L. Esaki: Resonant tunneling of holes in GaAs–GaAlAs superlattices. Appl. Phys. Lett. 47, 415–417 (1985). For this and related work Mendez was awarded the Prince of Asturias Prize, 1998 9.69 E. Merzbacher: Quantum Mechanics (Wiley, New York 1961) pp. 94–97 9.70 D. Z.-Y. Ting, S. K. Kirby, T. C. McGill: Interface roughness effects in resonant tunneling structures. Appl. Phys. Lett. 64, 2004–2006 (1994) 9.71 T. P. E. Broekaert, W. Lee, C. G. Fonstad: Pseudomorphic In 0.53Ga0.47As/AlAs/ InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature. Appl. Phys. Lett. 53, 1545–1547 (1988) 9.72 K. von Klitzing, G. Dorda, M. Pepper: New method for high-accuracy determination of the fine-structure constant based on quantum Hall resistance. Phys. Rev. Lett. 45, 494–497 (1980) 9.73 D. C. Tsui, H. L. Störmer, A. C. Gossard: Two dimensional magnetotransport in the extreme quantum limit. Phys. Rev. Lett. 45, 1559–1562 (1982) 9.74 L. D. Landau: Diamagnestism of metals (in German). Z. Physik. 64, 629–637 (1930) 9.75 L. D. Landau, E. N. Lifshitz: Quantum Mechanics, 3rd edn. (Pergamon, Oxford 1977) 9.76 J. M. Ziman: Principles of the Theory of Solids, 2nd edn. (Cambridge Univ. Press, Cambridge 1972) pp. 313–326 9.77 M. Brodsky (ed.): Amorphous Semiconductors, 2nd edn., Topics Appl. Phys, Vol. 36 (Springer, Berlin, Heidelberg 1985) 9.78 J. Tauc: Amorphous and Liquid Semiconductors (Plenum, New York 1974) 9.79 H. Störmer: Fractional Quantum Hall effect today, Solid State Commun. 107, 617–622 (1998) 9.80 S. M. Girvin: Exotic quantum order in two-dimensional systems, Solid State Commun. 107, 623–628 (1998) 9.81 D. C. Tsui, H. Störmer, A. C. Gossard: Two-dimensional magnetotransport in the extreme quantum limit. Phys. Rev. Lett. 48, 1559–1562 (1982). 9.82 R. B. Laughlin: Anomalous QHE: An incompressible fluid with fractionally charged excitations. Phys. Rev. Lett. 50, 1395–1398 (1983) 9.83 R. Loudon: Raman effect in crystals. Adv. Phys. 13, 423–482 (1964); erratum ibid. 14, 621 (1965) General Reading Growth of Quantum Wells and Superlattices Hermann M. A., H. Sitter: Molecular Beam Epitaxy, 2nd. edn., Springer Ser. Mater. Sci., Vol. 7 (Springer, Berlin, Heidelberg 1996) Milnes A. G., D. L. Feucht: Heterojunctions and Metal-Semiconductor Junctions (Academic, NY, 1972) Panish M. B., H. Temkin: Gas Source Molecular Beam Epitaxy, Springer Ser. Mater. Sci., Vol. 26 (Springer, Berlin, Heidelberg 1993) Ploog K.: Formation of semiconductor interfaces during molecular beam epitaxy, in Semiconductor Interfaces: Formation and Properties, ed. by G. LeLay, J. Denien, N. Boccara (Springer, Berlin, Heidelberg 1987)
References 753 Stradling R. A., P. C. Klipstein (eds.): Growth and Characterization of Semiconductors (Hilger, Bristol, UK 1990) Wang S.: Fundamentals of Semiconductor Theory and Device Physics, (Prentice Hall, Englewood Cliffs, New Jersey, 1989) Properties of Quantum Wells and Superlattices Ando T., Y. Arakawa, K. Furuya, S. Komiyama, H. Nakashima (eds.): Mesoscopic Physics and Electronics, NanoScience and Technology (Springer, Berlin, Heidelberg 1998) Dekker A. J.: Solid State Physics (Prentice Hall, Englewood Cliffs, NJ 1957) p. 244 Ehrenreich H., D. Turnbull (eds.): Semiconductor Heterostructures and Nanostructures Adv. Res. Appl., Vol. 44 (Academic, San Diego, CA 1991) Ivchenko E. L., G. Pikus: Superlattices and Other Heterostructures: Symmetry and Other Optical Phenomena, Springer Ser. Solid-State Sci., Vol. 110 (Springer, Berlin, Heidelberg 1995) Jaros M.: Superlattices of Semiconductor Microstructures (Clarendon, Oxford 1985) Jusserand B., M. Cardona: Raman spectroscopy of vibrations in superlattices, in Light Scattering in Solids V, ed. by M. Cardona, G. Güntherodt, Topics Appl. Phys., Vol. 66 (Springer, Berlin, Heidelberg 1989) pp. 49–152 Kroemer H.: Theory of heterojunction: A critical review, in Molecular Beam Epitaxy and Heterostructures, ed. by L. L. Chang, K. Ploog (Nijhoff, Dordrecht 1985) pp. 331–379 Menéndez J.: Phonons in GaAs–AlxGa1xAs superlattices. J. Luminesc. 44, 285–314 (1989) Pearsall, T. P. (ed.): Strain-Layer Superlattices: Physics, Semiconductors and Semimetals, Vol. 32 (Academic, Orlando, FL 1990) Pinczuk A., G. Abstreiter: Spectroscopy of free carriers excitations in semiconductor quantum wells, in Light Scattering in Solids V, ed. by M. Cardona, G. Güntherod, Topics Appl. Phys., Vol. 66 (Springer, Berlin, Heidelberg 1989) Chap. 4, pp. 153–211 Sapriel J., B. Djafari Rouani: Vibrations in superlattices. Surf. Sci. Rept. 10, 189–275 (1989) Singh J.: Physics of Semiconductors and their Heterostructures (McGraw-Hill, New York 1993) Wang S.: Fundamentals of Semiconductor Theory and Device Physics (Prentice Hall, Englewood Cliffs, NJ 1989) Weisbuch C., B. Vinter: Quantum Semiconductor Structures, Fundamentals and Applications (Academic, San Diego, CA 1991) Quantum Hall Effect Chakraborty T., P. Pietiläinen: The Quantum Hall Effects – Fractional and Integral, 2nd edn., Springer Ser. Solid-State Sci., Vol. 85 (Springer, Berlin, Heidelberg 1995) Jain, J. K.: The composite fermion: a quantum particle and its quantum fluids, Physics today, April 2000, pp. 39–45 Janssen M., O. Viehweger, U. Fastenrath, J. Hajdu: Introduction to the Theory of the Integer Quantum Hall Effect (VCH, Weinheim 1994) McDonald A. H. (ed.): Quantum Hall Effect: A Perspective (Kluwer, Boston 1989) Prange R. E., S. M. Girvin (eds.): The Quantum Hall Effect (Springer, New York, Berlin 1990)
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Appendix A: Pioneers of Semiconduct
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Ultra-Pure Germanium 555 Ultra-Pure
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References Ultra-Pure Germanium 557
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Two Pseudopotential Methods: Empiri
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The Early Stages of Band-Structures
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Cyclotron Resonance and Structure o
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References Cyclotron Resonance and
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Optical Properties of Amorphous Sem
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Optical Spectroscopy of Shallow Imp
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Page 21 and 22:
Page 23 and 24:
On the Prehistory of Angular Resolv
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The Discovery and Very Basics of th
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The Birth of the Semiconductor Supe
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Number of papers 500 200 100 50 20
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Appendix B: Solutions to Some of th
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Solution to Problem 2.6 585 transfo
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⎧ ⎫ 2apple ⎪⎨ cos (y z)
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Partial solution to Problem 2.8 589
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Page 41 and 42:
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Solution to Problem 2.16 Solution t
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Solution to Problem 2.20 597 to the
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Therefore the result of I ′ on
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Solution to Problem 3.2(c) Solution
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Solution to Problem 3.5 603 Similar
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Solution to Problem 3.7 (b and c) 6
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u3. The above equation can be reduc
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Solution to Problem 3.8 (a, c and d
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Solution to Problem 3.11(a,b and c)
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Solution to Problem 3.16 613 (1) Al
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Solution to Problem 3.17 Solution t
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Solution to Problem 3.17 617 forces
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Solution to Problem 4.1 619 the abo
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C dz ′ z ′ i° Solution to Pro
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R -R A y E’-E y E’-E R x Soluti
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Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
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Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
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A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
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Solution to Problem 8.9 661 of 19.5
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Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
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Chapter 2 693 and zinc-blende group
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Chapter 3 695 Inelastic x-ray Scatt
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Chapter 4 697 results from a better
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Chapter 5 699 K. Alberi, K. M. Yu,
Page 149 and 150: Chapter 5 701 P. Ramvall, N. Carlss
Page 151 and 152: Chapter 6 Ab initio calculations of
Page 153 and 154: Chapter 6 705 Strain-induced birefr
Page 155 and 156: Chapter 7 707 S. Baroni, S. de Giro
Page 157 and 158: Chapter 7 709 W. Windl, K. Karch, P
Page 159 and 160: Chapter 8 711 Strain Shift Coeffici
Page 161 and 162: Chapter 9 713 Z. J. Zhao, F. Liu, L
Page 163 and 164: Chapter 9 715 S. F. Ren, W. Cheng,
Page 165: Chapter 9 717 V. P. Gusynin, S. G.
Page 168 and 169: 720 References tions II. Misfitting
Page 170 and 171: 722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 192 and 193: 744 References 7.122 D. C. Reynolds
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 203 and 204: Subject Index A ·-Sn (gray tin) 95
Page 205 and 206: C c(2 × 8)(111) surface of Ge - di
Page 207 and 208: Dielectric function 117, 246, 253,
Page 209 and 210: Emission rate vs frequency in Ge 34
Page 211 and 212: Galena (PbS) 1 Gamma-ray detectors
Page 213 and 214: Insulators 1 Integral quantum Hall
Page 215 and 216: - - vs T 222 - temperature dependen
Page 217 and 218: - frequency 253, 306, 335 - - of va
Page 219 and 220: Resonant Raman profile 403 Resonant
Page 221 and 222: - - LA phonons 512 - - LO phonons 5
Page 223: - structure 142 - symmetry operatio
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