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10. Appendix

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732 References<br />

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temperature dependence of the interband transitions of cubic and hexagonal<br />

GaN, Phys. Rev. B50, 18017, 18029 (1994)<br />

6.29 O. Madelung, M. Schulz, H. Weiss (eds.): Landolt-Börnstein, Ser.III, Vol. 22<br />

(Semiconductors), Subvol. a: Intrinsic properties of group-IV elements, III–V,<br />

II–VI and I–VII compounds (Springer, Berlin, Heidelberg 1987)<br />

6.30 R. B. Schoolar, J. R. Dixon: Optical constant of lead sulfide in the fundamental<br />

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6.31 G. W. Gobeli, H. Y. Fan: Semiconductor Research, Second Quartertly Rept.,<br />

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6.37 G. H. Wannier: The structure and electronic excitation levels in insulating crystals.<br />

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6.41 K. Cho (ed.): Excitons, Topics Curr. Phys., Vol. 14 (Springer, Berlin, Heidelberg<br />

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6.42 J. J. Hopfield: Theory of contribution of excitons to the complex dielectric constant<br />

of crystals. Phys. Rev. 112, 1555–1567 (1958)<br />

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Phys. 12, 111–140 (1959)<br />

6.44 R. J. Elliott: Intensity of optical absorption by excitons. Phys. Rev. 108,<br />

1384–1389 (1957)<br />

6.45 M. Steube, K. Reimann, D. Fröhlich and S.J. Clarke: Free excitons with n 2<br />

in bulk GaN. Appl. Phys. Lett. 71, 948–949 (1997)<br />

B. Monemar: Optical Properties of GaN, in Semiconductors and Semimetals,<br />

Vol. 50 (Academic, N.Y., 1998) p. 305–363<br />

6.46 A. Baldereschi, N. O. Lipari: Energy levels of direct excitons in semiconductors<br />

with degenerate bands. Phys. Rev. B 3, 439–450 (1971)<br />

6.47 A. Baldereschi, N. O. Lipari: Spherical model of shallow acceptor states in<br />

semiconductors. Phys. Rev. B 8, 2697–2709 (1973)<br />

6.48 S. Adachi: Physical Properties of III–V Semiconductor Compounds (Wiley,<br />

New York 1992)

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