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10. Appendix

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738 References<br />

Chapter 7<br />

7.1 W. Heitler: The Quantum Theory of Radiation (Oxford Univ. Press, Oxford<br />

1954)<br />

7.2 A. Einstein: Emission and absorption of radiation in the quantum theory (in<br />

German). Verh. Dtsch. Phys. Ges. 18, 318–323 (1916)<br />

7.3 A. Einstein: The quantum theory of radiation (in German). Phys. Z. 18,<br />

121–128 (1917)<br />

7.4 W. van Roosbroeck, W. Schockley: Photon-radiative recombination of electrons<br />

and holes in germanium. Phys. Rev. 94, 1558–1560 (1954)<br />

J. Pankove: Optical Processes in Semiconductors (Dover, New York 1971)<br />

p. 110<br />

7.5 E. Burstein: Anomalous optical absorption limit in InSb. Phys. Rev. 93,<br />

632–633 (1954)<br />

7.6 T. S. Moss: The interpretation of the properties of indium antimonide. Proc.<br />

Phys. Soc. (London) B 67, 775–782 (1954)<br />

7.7 S. Wang: Fundamentals of Semiconductor Theory and Device Physics (Prentice<br />

Hall, Englewood Cliffs, NJ 1989) pp. 760–766<br />

7.8 N. Caswell, J. S. Weiner, P. Y. Yu: A study of non-thermalized luminescence<br />

spectra: The case of Cu2O. Solid State Commun. 40, 843–846 (1981)<br />

7.9 P. Y. Yu, Y. R. Shen: Resonance Raman studies in cuprous oxide. II. The yellow<br />

and green excitonic series. Phys. Rev. B 17, 4017–4030 (1978)<br />

7.10 L. T. Canham: Silicon quantum wire array fabrication by electrochemical and<br />

chemical dissolution of wafers. Appl. Phys. Lett. 57, 1046–1048 (1990)<br />

7.11 L. T. Canham, W. Y. Leong, T. I. Cox, M. I. Beale, K. J. Nash, P. Calcott,<br />

D. Brumhead, L. L. Taylor, K. J. Marsh: Efficient visible photoluminescence<br />

and electroluminescence from highly porous silicon, in The Physics of Semiconductors,<br />

ed. by P. Jiang, H.-Z. Zheng (World Scientific, Singapore 1992)<br />

Vol. 2, pp. 1423–1430<br />

7.12 K. H. Jung, S. Shih, D. L. Kwong: Developments in luminescent porous Si.<br />

J. Electrochem. Soc. 140, 3046–3064 (1993)<br />

7.13 J. Zeman, M. Zigone, G. L. J. A. Rikken, G. Martinez: Hydrostatic pressure effects<br />

on the porous silicon luminescence. J. Phys. Chem. Solids 56, 655–661<br />

(1995)<br />

For reviews on the luminescence of porous silicon see: L. Brus: Luminescence<br />

of silicon materials: Chains, sheets, nanocrystals, microcrystals, and porous silicon.<br />

J. Phys. Chem. 98, 3575–3581 (1994)<br />

7.14 C. Kittel: Introduction to Solid State Physics, 7th edn. (Wiley, New York 1995)<br />

7.15 J. Pankove. Optical Processes in Semiconductors (Dover, New York 1971)<br />

7.16 P. Y. Yu, B. Welber: High pressure photoluminescence and resonance Raman<br />

studies of GaAs. Solid State Commun. 25, 209–211 (1978)<br />

7.17 H. Y. Fan: Temperature dependence of the energy gap in semiconductors. Phys.<br />

Rev. 82, 900–905 (1951)<br />

7.18 J. C. Inkson: The effect of electron interaction on the band gap of extrinsic<br />

semiconductors. J. Phys. C 9, 1177–1183 (1976)<br />

7.19 W. P. Dumke: Optical transitions involving impurities in semiconductors. Phys.<br />

Rev. 132, 1998–2002 (1963)<br />

7.20 F. E. Williams: Theory of the energy levels of donor-acceptor pairs. J. Phys.<br />

Chem. Solids 12, 265–275 (1960)<br />

7.21 P. J. Dean: Inter-impurity recombinations in semiconductors. Progress in Solid<br />

State Chemistry 8, 1–216 (Pergamon, Oxford 1973)

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