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10. Appendix

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610 <strong>Appendix</strong> B<br />

Note that in real situations one often has to diagonalize the Pikus-Bir<br />

Hamiltonian by assuming that the unperturbed states include both the J 3/2<br />

and J 1/2 states. In this case one can use the large spin-orbit coupling approximation<br />

only for low stress to obtain the linear stress-induced splitting<br />

2b(S11 S12)X. For high uniaxial stress the mJ ±1/2 states of both the<br />

J 3/2 and J 1/2 states will be coupled by the stress Hamiltonian and one<br />

obtains a nonlinear stress dependence of their energies. Students are urged to<br />

derive the 6×6 matrices for the two cases of a [100] and a [111] uniaxial stress<br />

and then diagonalize these matrices to obtain the stress dependent energies of<br />

the J 3/2 and 1/2 states.<br />

Solution to Problem 3.9<br />

From (2.84a) and (2.94b) we can express the zone-center conduction and valence<br />

band energies Ec and Ev as:<br />

Ec Es Es |Vss| and Ev Ep Ep |Vxx| .<br />

If we assume that both |Vss| and |Vxx| depend on the nearest neighbor distance<br />

d as d 2 and d is related to the lattice constant a by d (a/4) √ 3 then<br />

¢Vss<br />

Vss<br />

¢Vxx<br />

Vxx<br />

2 ¢a<br />

a 2<br />

3<br />

¢V<br />

V<br />

where ¢V<br />

V<br />

is the volume dilation.<br />

It can be expressed in terms of the trace of the strain tensor e : ¢V/V <br />

Trace(e). We can express the above results as:<br />

¢Ec <br />

2<br />

3<br />

<br />

|Vss|Trace(e); and ¢Ev <br />

2<br />

3<br />

<br />

|Vxx|Trace(e).<br />

The relative deformation potential (ac av) is then given by: ¢Ec ¢Ev <br />

(ac av)Trace(e) (2/3)[|Vss| |Vxx|]Trace(e). Hence the relative deformation<br />

potential (ac av) is given by: (2/3)[|Vss| |Vxx|].<br />

In the following table we compare the values of (ac av) inC,SiandGe<br />

obtained from the tight binding parameters in Table 2.26 and compare them<br />

with experimental values (all energies in units of eV).<br />

|Vss| |Vxx| (ac av)theoretical (ac av)experimental<br />

C 15.2 3.0 12.1<br />

Si 8.13 3.17 7.53 10<br />

Ge 6.78 2.62 6.07 12<br />

While this approach gives the right order of magnitude and sign for the deformation<br />

potentials, it is not accurate enough. As seen in the cases of Si and Ge<br />

the values obtained from the model are smaller than the experimental values<br />

by about a factor of two.

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