10. Appendix
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610 <strong>Appendix</strong> B<br />
Note that in real situations one often has to diagonalize the Pikus-Bir<br />
Hamiltonian by assuming that the unperturbed states include both the J 3/2<br />
and J 1/2 states. In this case one can use the large spin-orbit coupling approximation<br />
only for low stress to obtain the linear stress-induced splitting<br />
2b(S11 S12)X. For high uniaxial stress the mJ ±1/2 states of both the<br />
J 3/2 and J 1/2 states will be coupled by the stress Hamiltonian and one<br />
obtains a nonlinear stress dependence of their energies. Students are urged to<br />
derive the 6×6 matrices for the two cases of a [100] and a [111] uniaxial stress<br />
and then diagonalize these matrices to obtain the stress dependent energies of<br />
the J 3/2 and 1/2 states.<br />
Solution to Problem 3.9<br />
From (2.84a) and (2.94b) we can express the zone-center conduction and valence<br />
band energies Ec and Ev as:<br />
Ec Es Es |Vss| and Ev Ep Ep |Vxx| .<br />
If we assume that both |Vss| and |Vxx| depend on the nearest neighbor distance<br />
d as d 2 and d is related to the lattice constant a by d (a/4) √ 3 then<br />
¢Vss<br />
Vss<br />
¢Vxx<br />
Vxx<br />
2 ¢a<br />
a 2<br />
3<br />
¢V<br />
V<br />
where ¢V<br />
V<br />
is the volume dilation.<br />
It can be expressed in terms of the trace of the strain tensor e : ¢V/V <br />
Trace(e). We can express the above results as:<br />
¢Ec <br />
2<br />
3<br />
<br />
|Vss|Trace(e); and ¢Ev <br />
2<br />
3<br />
<br />
|Vxx|Trace(e).<br />
The relative deformation potential (ac av) is then given by: ¢Ec ¢Ev <br />
(ac av)Trace(e) (2/3)[|Vss| |Vxx|]Trace(e). Hence the relative deformation<br />
potential (ac av) is given by: (2/3)[|Vss| |Vxx|].<br />
In the following table we compare the values of (ac av) inC,SiandGe<br />
obtained from the tight binding parameters in Table 2.26 and compare them<br />
with experimental values (all energies in units of eV).<br />
|Vss| |Vxx| (ac av)theoretical (ac av)experimental<br />
C 15.2 3.0 12.1<br />
Si 8.13 3.17 7.53 10<br />
Ge 6.78 2.62 6.07 12<br />
While this approach gives the right order of magnitude and sign for the deformation<br />
potentials, it is not accurate enough. As seen in the cases of Si and Ge<br />
the values obtained from the model are smaller than the experimental values<br />
by about a factor of two.