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10. Appendix

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– structure 142<br />

– symmetry operations 145<br />

X<br />

X-rays 9<br />

X-ray fluorescence 428<br />

X 1–X 3 splitting in zincblende materials 443<br />

XES (X-rays fluorescence emission spectroscopy)<br />

431<br />

X-rays photoemission spectroscopy (XPS) 9,<br />

428, 436<br />

– effect of band bending 463<br />

– spectrum of III–V compounds 443<br />

Z<br />

Zener band-to-band tunneling 581<br />

Zero bandgap semiconductor 2, 95<br />

Zero-point motion 346<br />

– phonons 378<br />

– photons 346<br />

Zincblende (ZnS) 1, 423<br />

– crystal structure 22<br />

– elastic waves 141<br />

– group of ¢ and representation 51<br />

– group of X and representation 52<br />

– nearly-free-electron band structure 48<br />

– symmetry operations 30<br />

– zone center TO and LO phonons 111, 112<br />

ZnO 3<br />

ZnS (see also zincblende) 143<br />

ZnSe<br />

– band structure 65<br />

– effective charges 305<br />

– selective excitation spectra of excitons<br />

bound to Na and Li donors 373<br />

– self-compensation 182<br />

ZnTe<br />

– effective charges 305<br />

– imagingary part of dielectric function 289<br />

– self-compensation 182<br />

ZnSiP 2 4<br />

Zone folding and splittings of phonons 497<br />

Subject Index 775

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