10. Appendix

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758 Subject Index Core levels (continued) – photoemission 451 – shifts 453 Core shells 59 Correlated electron-hole pairs 277 Cosets 30 Coulomb gauge 255, 534 Coulomb interaction 112, 131 Coulomb potential screened 162 Coupled plasmon-LO phonon modes 338 Critical field for Gunn diodes 229 Critical layer thickness 12, 477 Critical points in density-of-states 262 – M 0, M 1, M 2, and M 3 types in 3D 262 Critical points in photoemission 450 Crystal growth (see Growth) 5 Crystal structure – cuprite (Cu 2O) 137 – diamond 22 – fluorite (CaF 2)32 – selenium, tellurium 157 – wurtzite 143 – zincblende 22 Crystallographic point groups 28 Crystallographic until cell 23 Cu 2O (cuprite) 1, 3, 275 – crystal structure 137 – exciton effective mass 419 – forbidden absorption edge 275 – green exciton series 350 – luminescence 349 – phonons 113, 137, 409 – Raman scattering 349, 416, 417 – – by odd parity phonons 409, 410 CuCl 2, 363, 451 – 3d-electrons 440 – polariton emission 364 – spin-orbit splitting at ° 74, 451 CuO 3 Cuprite (see Cu 2O) Current density operator 204 CVD (Chemical vapor deposition) 7 Cyclotron frequency 233 Cyclotron resonance 561 – study of valence band edges 563 Czochralski Method 6 – growth of Ge 555 D D – (electron bound to neutral donor) 368 D – in low dimensions 368 Damping constant 298, 403 Dangling bonds 182, 457 Dark counts 387 Dash technique 6 Debye screening 212, 217 Deep center 161 Deep impurity level 159, 161, 170, 180, 197 – A 1 symmetry 191, 193 – bound state 185 – energy moments 196 – Green’s function method 183 – LCAO method 187 – resonant states 186 Defect complexes 160 Defects 159 – classification 160 – extrinsic 160 Deformation potentials 122, 126, 130, 132, 153 – at L valley in Ge 128 – deformation potential interaction 211 – electron-optical phonon 132 – intervalley 130 – volume 125 Density of conduction states 456 Density of excitations 427 Density of final states 472 Density-of-states 183, 472 – local 186 – partial 190 – peaks in photoemission 450 – projected 190 – two dimensional 324 Dependence of energy gaps on isotopic mass 330 Derivative of dielectric function 315, 319 Detailed balance 208, 346 Detector in Raman spectroscopy 386 Diad screw axis 29 Diamond – character tables of group of ° 54 – crystal structures 22, 30 – factor group 32 – irreducible representation and characters of ¢-point 58 – irreducible representation of X-point 57 – phonon dispersion curves 121 – stiffness constants 141 – symmetry of L-point 55 – symmetry of X-point 57 – tight-binding interaction parameters 91 – zone-center phonons 44 Diatomic molecule 85 Dielectric constant 337 – high frequency 134, 293 – low frequency 134, 295 – static 162
Dielectric function 117, 246, 253, 261, 315, 333 – including phonons and free carriers 338 – microscopic theory 254 – of GaAs 248, 253 – – theory vs experiment 265 – of Ge 253, 255 – – theory vs experiment 266 – of Si 254 – of wurtzite GaN 334 – – theory vs experiment 264 Dielectric tensor 245 Difference modes 377 Differential scattering cross section 383 Diffusion of carriers 206 Dilation 124 Dilute magnetic semiconductors 4 Dimension of a representation 35 Dirac delta-function 183 Direct absorption edges 268 – forbidden 273 – of Ge 349 Direct bandgap semiconductor 136, 215 Direct forbidden transitions – dependence of Â i on ˆ 277 – in Cu 2O 287 Direct lattice 23 Direct product of representations 41 Direct sum of representations 40 Direct transition 259, 449 Dislocation 5, 12, 160 Disorder 539 Dispersion – of J z = 3/2 and J z = 1/2 hole bands in QW’s 484 – of J z = 3/2 and J z = 1/2 hole bands under uniaxial stress 484 – of the Ge(111)-c(2 × 8) surface bands 460 – Dispersion relations 185, 250 Displacement patterns of phonons in AlAs/GaAlAs SL’s 501 Displacement vectors 42 Distribution function 206 – Boltzmann 207 – Bose-Einstein 126 – Fermi-Dirac 206 Domain in Gunn diodes 232 Donor acceptor pairs (DAP) – Coulomb attraction 356 – distribution 423 – luminescence spectra 373 – – in GaP 357, 358 – – lineshapes 357 – – selectively excited in ZnSe 374 – – time resolved 361 – – Type I 357 – – Type II 357 Donor electron 161 – Bohr radius 167 – energy levels in Si 172–173 Donors 160 – associated with anisotropic conduction bands 171 – binding energy in zinc-blende-type semiconductors 169 – double 160 – hydrogenic 166 – in Si photoconductive response 571 – shallow 166 – tight-binding method 194 Doping superlattices 477 – schematic diagram 578 Doppler broadening 372 Double barrier QW structure 526 Double barrier tunneling devices I–V characteristics 527 Double groups 72 – representation 98 – notations 64 Double monochromator 386 Drift velocity 205, 226 – dependence on electric field 226 – – in GaAs 231 Drude edge 310 Drude model 306, 310 DX center 170, 182, 197 Dye laser 386 Dynamic effective charges 304 Dynamic range 387 Dynamical matrix 110 Dyson equation 187 E E 0 critical points 268, 316 E 0 gap 70, 77, 266 E 0 + ¢ 0 critical points 316 E 0 + ¢ 0 gap 266 E 0' transition 267 E 1 – critical points 268, 290, 316 – excitons 290 – transitions 266 E 1 + ¢ 1 critical points 268, 290, 316 E 1' transitions 267 E 2 – critical points 268, 316 – peak 267 Subject Index 759
Page 1 and 2:
Appendix A: Pioneers of Semiconduct
Page 3 and 4:
Ultra-Pure Germanium 555 Ultra-Pure
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References Ultra-Pure Germanium 557
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Two Pseudopotential Methods: Empiri
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The Early Stages of Band-Structures
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Cyclotron Resonance and Structure o
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References Cyclotron Resonance and
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Optical Properties of Amorphous Sem
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Optical Spectroscopy of Shallow Imp
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Page 21 and 22:
Page 23 and 24:
On the Prehistory of Angular Resolv
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The Discovery and Very Basics of th
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The Birth of the Semiconductor Supe
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Number of papers 500 200 100 50 20
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Appendix B: Solutions to Some of th
Page 33 and 34:
Solution to Problem 2.6 585 transfo
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⎧ ⎫ 2apple ⎪⎨ cos (y z)
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Partial solution to Problem 2.8 589
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Solution to Problem 2.16 Solution t
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Solution to Problem 2.20 597 to the
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Therefore the result of I ′ on
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Solution to Problem 3.2(c) Solution
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Solution to Problem 3.5 603 Similar
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Solution to Problem 3.7 (b and c) 6
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u3. The above equation can be reduc
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Solution to Problem 3.8 (a, c and d
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Solution to Problem 3.11(a,b and c)
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Solution to Problem 3.16 613 (1) Al
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Solution to Problem 3.17 Solution t
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Solution to Problem 3.17 617 forces
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Solution to Problem 4.1 619 the abo
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C dz ′ z ′ i° Solution to Pro
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R -R A y E’-E y E’-E R x Soluti
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Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
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Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
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A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
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Solution to Problem 8.9 661 of 19.5
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Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
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Chapter 2 693 and zinc-blende group
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Chapter 3 695 Inelastic x-ray Scatt
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Chapter 4 697 results from a better
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Chapter 5 699 K. Alberi, K. M. Yu,
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Chapter 5 701 P. Ramvall, N. Carlss
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Chapter 6 Ab initio calculations of
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Chapter 6 705 Strain-induced birefr
Page 155 and 156: Chapter 7 707 S. Baroni, S. de Giro
Page 157 and 158: Chapter 7 709 W. Windl, K. Karch, P
Page 159 and 160: Chapter 8 711 Strain Shift Coeffici
Page 161 and 162: Chapter 9 713 Z. J. Zhao, F. Liu, L
Page 163 and 164: Chapter 9 715 S. F. Ren, W. Cheng,
Page 165: Chapter 9 717 V. P. Gusynin, S. G.
Page 168 and 169: 720 References tions II. Misfitting
Page 170 and 171: 722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 192 and 193: 744 References 7.122 D. C. Reynolds
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 200 and 201: 752 References 9.68 J. P. Palmier:
Page 203 and 204: Subject Index A ·-Sn (gray tin) 95
Page 205: C c(2 × 8)(111) surface of Ge - di
Page 209 and 210: Emission rate vs frequency in Ge 34
Page 211 and 212: Galena (PbS) 1 Gamma-ray detectors
Page 213 and 214: Insulators 1 Integral quantum Hall
Page 215 and 216: - - vs T 222 - temperature dependen
Page 217 and 218: - frequency 253, 306, 335 - - of va
Page 219 and 220: Resonant Raman profile 403 Resonant
Page 221 and 222: - - LA phonons 512 - - LO phonons 5
Page 223: - structure 142 - symmetry operatio
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