10. Appendix

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744 References 7.122 D. C. Reynolds, R. N. Euwema, T. C. Collins: Evidence for spatial dispersion in emission from CdS platelets, in Proc. Int’l Conf. on the Physics of Semiconductors, ed. by S. M. Ryvkin (Nauka, Moscow 1968) pp. 210–216 7.123 V. A. Kiselev, B. S. Razbirin, I. N. Uraltsev: Additional waves and Fabry-Perot interference of photoexcitation (polaritons) in thin II–VI crystals. Phys. Status Solidi B 72, 161–172 (1975) 7.124 W. Brenig, R. Zeyher, J. L. Birman: Spatial dispersion effects in resonant polariton scattering. II. Resonant Brillouin scattering. Phys. Rev. B 6, 4617–4622 (1972) 7.125 R. G. Ulbrich, C. Weisbuch: Resonant Brillouin scattering of excitonic polaritons in gallium arsenide. Phys. Rev. Lett. 38, 865–868 (1977) 7.126 R. G. Ulbrich: Resonant Brillouin scattering in semiconductors. Festkörperprobleme (Adv. Solid State Phys.) 18, 217–240 (Vieweg, Braunschweig 1978) 7.127 E. S. Koteles: Investigation of exciton-polariton dispersion using laser techniques, in Excitons, ed. by E. I. Rashba, M. D. Sturge (North-Holland, Amsterdam 1982) pp. 85–140 7.128 P. Wickboldt, E. Anastassakis, R. Sauer, M. Cardona: Raman phonon piezospectroscopy in GaAs: Infrared measurements. Phys. Rev. B 35, 1362–1368 (1987) General Reading Agrawal, G. P.: Semiconductor Lasers: post, present, and future. (AIP Press, Woodburry, New York, 1995) Balkanski M. (ed.): Light Scattering in Solids (Flammarion, Paris 1971) Bebb H. B., E. W. Williams: Photoluminescence: I. Theory, II. Gallium arsenide. Semiconductors and Semimetals 8, 182–329 (Academic, New York 1972) Cardona M., G. Güntherodt (eds.): Light Scattering in Solids I–VI, Topics Appl. Phys., Vols. 8, 50, 51, 54, 66, 68 (Springer, Berlin, Heidelberg 1975–91) Chapter 8 8.1 M. Cardona. L. Ley (eds.): Photoemission in Solids I, Topics App. Phys., Vol. 26 (Springer, Berlin, Heidelberg 1978) 8.2 L. Ley, M. Cardona (eds.): Photoemission in Solids II, Topics Appl. Phys., Vol. 27 (Springer, Berlin, Heidelberg 1979) 8.3 K. Siegbahn, C. Nordling, A. Fahlman, R. Nordberg, K. Hamrin, J. Hedman, G. Johansson, T. Bergman, S.-E. Karlsson, I. Lindgren, B. Lindberg: ESCA – Atomic, Molecular and Solid State Structure (Almqvist and Wiksels, Uppsala 1967) 8.4 L. E. Davis, N. C. MacDonald, P. W. Palmberg, G. E. Riach, R. E. Weber: Handbook of Auger Electron Spectroscopy (Physical Electronics Industries, Eden Prairie, MN 1979) 8.5 C. Kunz (eds.): Synchrotron Radiation Techniques and Applications, Topics Curr. Phys., Vol. 10 (Springer, Berlin, Heidelberg 1979) 8.6 E. E. Koch: Handbook of Synchrotron Radiation (North-Holland, Amsterdam 1983)
References 745 8.7 M. Cardona, W. Gudat, B. Sonntag, P. Y. Yu: Optical absorption of semiconductors from 12 to 200 eV, in: Proc. 10th Int’l Conf. on the Physics of Semiconductors, Cambridge MA (National Bureau of Standards, Washington, DC 1971) pp. 209–212 8.8 J. Daniels, C. v. Festenberg, H. Raether, K. Zeppenfeld: Optical constants of solids by electron spectroscopy. Springer Tracts Mod. Phys. 54, 77–135 (Springer, Berlin, Heidelberg 1970) 8.9 C. v. Festenberg: Z. Phys. 227, 453 (1969) 8.10 D. A. Shirley: In Photoemission in Solids I, ed. by M. Cardona. L. Ley, Topics Appl. Phys., Vol. 26 (Springer, Berlin, Heidelberg 1978) Chap. 4 8.11 W. Mönch: Semiconductor Surfaces and Interfaces, 2nd edn., Springer Ser. Surf. Sci., Vol. 26 (Springer, Berlin, Heidelberg 1995) 8.12 H. Lüth: Surfaces and Interfaces of Solids, 3rd edn. (Springer, Berlin, Heidelberg 1995) 8.13 H. Hertz: The effect of ultraviolet light on an electrical discharge. Ann. Phys. (Leipzig) 31, 983–1000 (1887) in German J. J. Thompson: Cathode rays. Phil. Mag. 44, 293 (1897) 8.14 A. Einstein: The production and transformation of light: A heuristic point of view. Ann. Phys. (Leipzig) 17, 132 (1905) in German 8.15 A. L. Hughes, L. A. DuBridge: Photoelectric Phenomena (McGraw-Hill, New York 1932) p. 16, Fig. 2–7 8.16 R. I. Bell: Negative Electron Affinity Devices (Clarendon, Oxford 1973) 8.17 C. Sebenne, D. Bolmont, G. Guichar, M. Balkanski: Surface states from photoemission threshold measurements on a clean, cleaved Si (111) surface. Phys. Rev. B 12, 3280–3285 (1983) 8.18 E. O. Kane: Theory of photoelectric emission from semiconductors. Phys. Rev. 127, 131–141 (1962) 8.19 K. Winer, I. Hirabayashi, L. Ley: Distribution of occupied near-surface bandgap states. Phys. Rev. B 38, 7680–7693 (1988) 8.20 J. Kirschner: Polarized Electrons at Surfaces, Springer Tracts Mod. Phys., Vol. 106 (Springer, Berlin, Heidelberg 1985) J. Kessler: Polarized Electrons, 2nd edn., Springer Ser. Atoms Plasmas, Vol. 1 (Springer, Berlin, Heidelberg 1985) 8.21 H. Riechert, S. F. Alvarado, A. N. Titkov, V. I. Safarev: Precession of the spin polarization of photoexcited electrons in the band bending region of GaAs (110). Phys. Rev. Lett. 52, 2297–2300 (1984) 8.22 F. J. Himpsel: Measurements of the photoemission in the study of solids. Adv. Phys. 32, 1–51 (1983) 8.23 T. Valla, A. V. Fedorov, P. D. Johnson, B. O. Wells, S. L. Hulbert, Q. Li, G. D. Gu, N. Koshizuka: Evidence for Quantum critical behavior in optimally doped Bi2Sr2CaCu2O 8‰. Science 285, 2110–2113 (1999). Here a commercial hemispherical analyzer with a resolution of 10 meV was used 8.24 H. Feldner-Feldegg, U. Gelius, B. Wannberg, A. G. Nilsson, E. Basilier, K. Siegbahn: New developments in ESCA instrumentation. J. Electron Sprectrosc. 5, 643–689 (1974) 8.25 W. L. Schaich: Theory of photoemission: Independent praticle model, in Photoemission in Solids I, ed. by M. Cardona, L. Ley, Topics Appl. Phys., Vol. 26 (Springer, Berlin, Heidelberg 1978) Chap. 2 8.26 C. N. Berglund, W. E. Spicer: Photoemission studies of Cu and Ag: Theory. Phys. Rev. A 136, 1030–1044 (1964)
Page 1 and 2:
Appendix A: Pioneers of Semiconduct
Page 3 and 4:
Ultra-Pure Germanium 555 Ultra-Pure
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References Ultra-Pure Germanium 557
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Two Pseudopotential Methods: Empiri
Page 9 and 10:
The Early Stages of Band-Structures
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Cyclotron Resonance and Structure o
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References Cyclotron Resonance and
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Optical Properties of Amorphous Sem
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Optical Spectroscopy of Shallow Imp
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Page 21 and 22:
Page 23 and 24:
On the Prehistory of Angular Resolv
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The Discovery and Very Basics of th
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The Birth of the Semiconductor Supe
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Number of papers 500 200 100 50 20
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Appendix B: Solutions to Some of th
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Solution to Problem 2.6 585 transfo
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⎧ ⎫ 2apple ⎪⎨ cos (y z)
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Partial solution to Problem 2.8 589
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Page 41 and 42:
Page 43 and 44:
Solution to Problem 2.16 Solution t
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Solution to Problem 2.20 597 to the
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Therefore the result of I ′ on
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Solution to Problem 3.2(c) Solution
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Solution to Problem 3.5 603 Similar
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Solution to Problem 3.7 (b and c) 6
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u3. The above equation can be reduc
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Solution to Problem 3.8 (a, c and d
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Solution to Problem 3.11(a,b and c)
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Solution to Problem 3.16 613 (1) Al
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Solution to Problem 3.17 Solution t
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Solution to Problem 3.17 617 forces
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Solution to Problem 4.1 619 the abo
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C dz ′ z ′ i° Solution to Pro
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R -R A y E’-E y E’-E R x Soluti
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Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
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Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
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A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
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Solution to Problem 8.9 661 of 19.5
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Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
Page 141 and 142: Chapter 2 693 and zinc-blende group
Page 143 and 144: Chapter 3 695 Inelastic x-ray Scatt
Page 145 and 146: Chapter 4 697 results from a better
Page 147 and 148: Chapter 5 699 K. Alberi, K. M. Yu,
Page 149 and 150: Chapter 5 701 P. Ramvall, N. Carlss
Page 151 and 152: Chapter 6 Ab initio calculations of
Page 153 and 154: Chapter 6 705 Strain-induced birefr
Page 155 and 156: Chapter 7 707 S. Baroni, S. de Giro
Page 157 and 158: Chapter 7 709 W. Windl, K. Karch, P
Page 159 and 160: Chapter 8 711 Strain Shift Coeffici
Page 161 and 162: Chapter 9 713 Z. J. Zhao, F. Liu, L
Page 163 and 164: Chapter 9 715 S. F. Ren, W. Cheng,
Page 165: Chapter 9 717 V. P. Gusynin, S. G.
Page 168 and 169: 720 References tions II. Misfitting
Page 170 and 171: 722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 200 and 201: 752 References 9.68 J. P. Palmier:
Page 203 and 204: Subject Index A ·-Sn (gray tin) 95
Page 205 and 206: C c(2 × 8)(111) surface of Ge - di
Page 207 and 208: Dielectric function 117, 246, 253,
Page 209 and 210: Emission rate vs frequency in Ge 34
Page 211 and 212: Galena (PbS) 1 Gamma-ray detectors
Page 213 and 214: Insulators 1 Integral quantum Hall
Page 215 and 216: - - vs T 222 - temperature dependen
Page 217 and 218: - frequency 253, 306, 335 - - of va
Page 219 and 220: Resonant Raman profile 403 Resonant
Page 221 and 222: - - LA phonons 512 - - LO phonons 5
Page 223: - structure 142 - symmetry operatio
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