10. Appendix
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
References 739<br />
7.22 D. G. Thomas, M. Gershenzon, F. A. Trumbore: Pair spectra and “edge” emission<br />
in gallium phosphide. Phys. Rev. 133, A269–279 (1964)<br />
7.23 P. J. Dean, E. G. Schönherr, R. B. Zetterstrom: Pair spectra involving the shallow<br />
acceptor Mg in GaP. J. Appl. Phys. 41, 3474–3479 (1970)<br />
7.24 D. G. Thomas, J. J. Hopfield, W. N. Augustyniak: Kinetics of radiative recombination<br />
of randomly distributed donors and acceptors. Phys. Rev. 140, A202–220<br />
(1965)<br />
7.25 D. D. Sell, S. E. Stokowski, R. Dingle, J. V. DiLorenzo: Polariton reflectance<br />
and photoluminescence in high-purity GaAs. Phys. Rev. B 7, 4568–4586<br />
(1973)<br />
7.26 F. Askary, P. Y. Yu: Polariton luminescence and additional boundary conditions:<br />
Comparison between theory and experiment. Solid State Commun. 47,<br />
241–244 (1983)<br />
7.27 Y. Toyozawa: On the dynamical behavior of an exciton. Prog. Theor. Phys.<br />
Suppl. 12, 111–140 (1959)<br />
7.28 J. J. Hopfield: Theory of the contribution of excitons to the complex dielectric<br />
constant of crystals. Phys. Rev. 112, 1555–1567 (1958)<br />
7.29 J. D. Jackson: Classical Electrodynamics, 2nd edn. (Wiley, New York 1975)<br />
pp. 17–22; p. 396<br />
7.30 S. I. Pekar: The theory of electromagnetic waves in a crystal in which excitons<br />
are produced. Sov. Phys. – JETP 6, 785–796 (1958); ibid. 7, 813–822<br />
(1958)<br />
7.31 C. S. Ting, M. J. Frankel, J. L. Birman: Electrodynamics of bounded spatially<br />
dispersive media: The additional boundary conditions. Solid State Commun.<br />
17, 1285–1289 (1975)<br />
7.32 K. Cho (ed.): Excitons, Topics Curr. Phys. Vol. 14 (Springer, Berlin, Heidelberg<br />
1979)<br />
7.33 A. Stahl, I. Balslev: Electrodynamics of the Semiconductor Band Edge,<br />
Springer Tracts Mod. Phys., Vol. 110 (Springer, Berlin, Heidelberg 1987)<br />
7.34 J. Tignon, T. Hasche, D. Chaula, H. C. Schneider, F. Jahnke, S. W. Koch: Unified<br />
Picture of Polariton Propagation in Bulk GaAs Semiconductors. Phys.<br />
Rev. Lett. 84, 3382 (2000)<br />
7.35 T. Steiner, M. L. Thewalt, E. S. Koteles, J. P. Salerno: Effect of neutral donor<br />
scattering on the time-dependent exciton-polariton photoluminescence line<br />
shape in GaAs. Phys. Rev. B 34, 1006–1013 (1986)<br />
7.36 D. G. Thomas, J. J. Hopfield: Optical properties of bound exciton complexes in<br />
cadmium sulfide. Phys. Rev. 128, 2135–2148 (1962)<br />
7.37 R. McWeeny: Coulson’s Valence, 3rd edn. (Oxford Univ. Press, Oxford 1979)<br />
p. 90<br />
7.38 J. J. Hopfield: The quantum chemistry of bound exciton complexes, in Proc. 7th<br />
Int’l Conf. on the Physics of Semiconductors, ed. by M. Hulin (Dunod, Paris<br />
1964) pp. 725–735<br />
7.39 L. Pauling, E. B. Wilson: Introduction to Quantum Mechanics (McGraw-Hill,<br />
New York 1935) p. 225<br />
7.40 D. D. Thornton, A. Honig: Shallow-donor negative ions and spin-polarized<br />
electron transport in silicon. Phys. Rev. Lett. 30, 909–912 (1973)<br />
7.41 S. Huant, S. P. Najda, B. Etienne: Two-dimensional D centers. Phys. Rev. Lett.<br />
65, 1486–1489 (1980)<br />
7.42 M. L. Lambert: Mobile and Immobile Effective-Mass-Particle Complexes in<br />
Nonmetallic Solids. Phys. Rev. Lett. 1, 450–453 (1958)