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10. Appendix

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Chapter 6<br />

Ab initio calculations of the bulk dielectric response of semiconductors<br />

Chapter 6 703<br />

In the additional references to Chap. 2 we have already mentioned the possibility<br />

of calculating fully ab initio the dielectric response (Â1 and Â2 vs. ˆ).<br />

There was already in the 3rd edition (Fig. 6.55) an example of such calculations<br />

for GaN, compared with experimental results. During the past decade<br />

this topic has received considerable attention. Some examples have been listed<br />

among the additional references to Chap. 2, such as the book: Time Dependent<br />

Density Functional Theory, ed. by M. A. L. Marques et al.. Most extant<br />

calculations, however, do not include spin-orbit interaction nor the effect of<br />

electron-phonon interaction (i.e., the dependence on temperature and on isotopic<br />

masses). Since much of the information on these two effects has been<br />

obtained from optical measurements, we have added references to pertinent<br />

recent articles in this chapter. We also take advantage of this update to include<br />

references to ab initio calculations of the second-harmonic generation<br />

at surfaces, and on the Burstein-Moss shift of the band gap with increasing<br />

doping.<br />

K. Nakamura, Y. Yoshimoto, R. Arita, S. Tsuneyuki, M. Imada: Optical Absorption<br />

Study by ab initio downfolding approach: Application to GaAs,<br />

Phys. Rev. B77, 195126/1–13 (2008).<br />

L. E. Ramos, J. Paier, G. Kresse, F. Bechstedt: Optical Spectra of Si Nanocrystallites:<br />

Bethe-Salpeter Approach Versus Time-Dependent Density Functional<br />

Theory. Phys. Rev. B78, 195423/1–9 (2008).<br />

A. Walsh, J. L. F. Da Silva, S. H. Wei: Origins of Band Gap Renormalization in<br />

Degenerate Doped Semiconductors, Phys. Rev. B78, 075211/1–5 (2008)<br />

M. Shishkin and G. Kresse: Self-Consistent GW Calculation for Semiconductors<br />

and Insulators. Phys. Rev. B75, 235102/1–9 (2007).<br />

O. Onida, L. Reining and A. Rubio: Electronic Excitations: Density-Functional<br />

vs. Many-Body Green’s-function Approaches. Rev. Mod. Phys. 74, 601–659<br />

(2002).<br />

V. Olevano and L. Reining: Excitonic Effects on the Silicon Plasmon Resonance.<br />

Phys. Rev. Lett. 86, 5962–5965 (2001).<br />

B. S. Mendoza, M.Palummo, G. Onida, R. del Sole: Ab Initio Calculation of<br />

Second Harmonic Generation at the silicon [100] surface. Phys. Rev. B63,<br />

205406/1–6 (2001).<br />

Dependence of bandgaps on Temperature and Isotopic Masses:<br />

Electron-Phonon Interaction<br />

Most calculations of Â(ˆ) available in the literature imply that they apply to<br />

T 0. This is, however not correct: even at T=0 the electron-phonon interaction,<br />

not included in the calculation, can significantly alter the corresponding<br />

electronic states. This fact has already been mention in Problem 6.19, in con-

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