10. Appendix

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572 <strong>Appendix</strong> A Energy [eV] 0.15 0.10 In Ga Al 0.05 B H 0 Valence band 1s 2p 3p 4p Fig. 3. Suggested term scheme for group III acceptors in Si showing the levels whose energies are derived from the low temperature absorption spectra [6] The optical ionization energies for donors in Si were found to be 10% larger than the thermal ionization energies, due in part to the presence of low-lying excited states that were not taken into account in the calculation of the activation energies. The positions of the ground state relative to the conduction band are appreciably different for the three donors P, As and Sb, again due to central cell effects. However, their excited p-states are observed at about the same positions relative to the conduction band (see Fig. 3 and [7]). Moreover, they are in good agreement with the results of the effective mass formulation of the donor p levels by Kohn and Luttinger [9], which takes into account the fact that the conduction band of Si has six nondegenerate minima along the [100] and equivalent directions. The data obtained in these early investigations were limited by the relatively low quality of the Si Samples, the poor resolution of the spectrometers and by the electronics. There has been major progress in the IR spectroscopy of shallow impurity levels in semiconductors since then, made possible by significant improvements in crystal quality, spectrometers and detectors, by the development of photothermal conductance spectroscopy, which has much higher sensitivity than IR detectors, and by the availability of tunable IR lasers [10]. References 1 J. Bardeen, G.L. Pearson: Phys. Rev. 75, 865 (1949) 2 E. Burstein, J.J. Oberly, J.W. Davisson, B.W. Henvis: Phys. Rev. 82, 764 (1951) 3 E. Burstein, E.E. Bell, J.W. Davisson, M. Lax: J. Phys. Chem. 57, 849 (1953)
Optical Spectroscopy of Shallow Impurity Centers 573 4 F.J. Morin, J.P. Maita, R.G. Schulman, N.B. Hannay: Phys. Rev. 97, 833 (1954) 5 E. Burstein, J.J. Oberly, J.W. Davisson, Phys. Rev. 89, 331 (1953) 6 E. Burstein, J.W. Davisson, E.E. Bell, W.J. Turner, H.G. Lipson: Phys. Rev. 93, 65 (1954) 7 E. Burstein, G. Picus, B.W. Henvis, R.F. Wallis: J. Phys. Chem. Solids 1, 65 (1956) 8 G. Picus, E. Burstein, B.W. Henvis: J. Phys. Chem. Solids 1, 75 (1956) 9 W. Kohn, J.M. Luttinger: Phys. Rev. 97, 883 (1954); ibid. 98, 915 (1955) 10 See the review by A.K. Ramdas, S. Rodriguez: Rep. Prog. Phys. 44, 1297 (1981)
Page 1 and 2: Appendix A: Pioneers of Semiconduct
Page 3 and 4: Ultra-Pure Germanium 555 Ultra-Pure
Page 5 and 6: References Ultra-Pure Germanium 557
Page 7 and 8: Two Pseudopotential Methods: Empiri
Page 9 and 10: The Early Stages of Band-Structures
Page 11 and 12: Cyclotron Resonance and Structure o
Page 13 and 14: References Cyclotron Resonance and
Page 15 and 16: Optical Properties of Amorphous Sem
Page 17 and 18: Optical Spectroscopy of Shallow Imp
Page 19: Optical Spectroscopy of Shallow Imp
Page 23 and 24: On the Prehistory of Angular Resolv
Page 25 and 26: The Discovery and Very Basics of th
Page 27 and 28: The Birth of the Semiconductor Supe
Page 29 and 30: Number of papers 500 200 100 50 20
Page 31 and 32: Appendix B: Solutions to Some of th
Page 33 and 34: Solution to Problem 2.6 585 transfo
Page 35 and 36: ⎧ ⎫ 2apple ⎪⎨ cos (y z)
Page 37 and 38: Partial solution to Problem 2.8 589
Page 43 and 44: Solution to Problem 2.16 Solution t
Page 45 and 46: Solution to Problem 2.20 597 to the
Page 47 and 48: Therefore the result of I ′ on
Page 49 and 50: Solution to Problem 3.2(c) Solution
Page 51 and 52: Solution to Problem 3.5 603 Similar
Page 53 and 54: Solution to Problem 3.7 (b and c) 6
Page 55 and 56: u3. The above equation can be reduc
Page 57 and 58: Solution to Problem 3.8 (a, c and d
Page 59 and 60: Solution to Problem 3.11(a,b and c)
Page 61 and 62: Solution to Problem 3.16 613 (1) Al
Page 63 and 64: Solution to Problem 3.17 Solution t
Page 65 and 66: Solution to Problem 3.17 617 forces
Page 67 and 68: Solution to Problem 4.1 619 the abo
Page 69 and 70: C dz ′ z ′ i° Solution to Pro
Page 71 and 72:
R -R A y E’-E y E’-E R x Soluti
Page 73 and 74:
Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
Page 97 and 98:
Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
Page 101 and 102:
A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
Page 109 and 110:
Solution to Problem 8.9 661 of 19.5
Page 111 and 112:
Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
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Chapter 2 693 and zinc-blende group
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Chapter 3 695 Inelastic x-ray Scatt
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Chapter 4 697 results from a better
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Chapter 5 699 K. Alberi, K. M. Yu,
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Chapter 5 701 P. Ramvall, N. Carlss
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Chapter 6 Ab initio calculations of
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Chapter 6 705 Strain-induced birefr
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Chapter 7 707 S. Baroni, S. de Giro
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Chapter 7 709 W. Windl, K. Karch, P
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Chapter 8 711 Strain Shift Coeffici
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Chapter 9 713 Z. J. Zhao, F. Liu, L
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Chapter 9 715 S. F. Ren, W. Cheng,
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Chapter 9 717 V. P. Gusynin, S. G.
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720 References tions II. Misfitting
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722 References 2.30 R. M. Wentzcovi
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724 References 3.23 R. M. Martin: E
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726 References Nye J. F.: Physical
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728 References Schubert E. F.: Dopi
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730 References Ferry D. K.: Semicon
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732 References 6.28 S. Logothetidis
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734 References 6.73 H. D. Fuchs, C.
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736 References 6.116 D. E. Aspnes:
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738 References Chapter 7 7.1 W. Hei
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740 References 7.43 G. Finkelstein,
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742 References 7.82 J. R. Sandercoc
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744 References 7.122 D. C. Reynolds
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746 References 8.27 A. Goldmann, J.
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748 References Electronic and Surfa
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750 References 9.31 A. Pinczuk, G.
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752 References 9.68 J. P. Palmier:
Page 203 and 204:
Subject Index A ·-Sn (gray tin) 95
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C c(2 × 8)(111) surface of Ge - di
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Dielectric function 117, 246, 253,
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Emission rate vs frequency in Ge 34
Page 211 and 212:
Galena (PbS) 1 Gamma-ray detectors
Page 213 and 214:
Insulators 1 Integral quantum Hall
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- - vs T 222 - temperature dependen
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- frequency 253, 306, 335 - - of va
Page 219 and 220:
Resonant Raman profile 403 Resonant
Page 221 and 222:
- - LA phonons 512 - - LO phonons 5
Page 223:
- structure 142 - symmetry operatio
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