10. Appendix

A4.1 A Prototypical Deep Center in N-Type Zincblende-Type Semiconductors 685
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[Lang79b] D. V. Lang, and R. A. Logan: Chemical shifts of DX centers in AlxGa1xAs.
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[Wang89a] Shyh Wang: Fundamentals of Semiconductor Theory and Device Physics
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[Wang89b] Shyh Wang: Fundamentals of Semiconductor Theory and Device Physics
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[Wolk92] See, for example, J. A. Wolk, W. Walukiewicz, M. L. Thewalt and E. E. Haller:
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[Zeman95] See J. Zeman, M. Zigone and G. Martinez: Optical investigation of the DX
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review of the Raman investigation of the DX center under pressure inside the DAC.