10. Appendix

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768 Subject Index Pauli’s exclusion principle 20, 59 PbI 2 3 PbS 3, 569 – dispersion of Â r near edge 270 – fundamental absorption edge 269–270 PbTe 3 Peak-to-valley current ratio in resonant tunneling devices 529 Peierls transition 458 Pekar additional boundary condition (ABC) 365 Penn gap 336 – table 337 Percolation 544 Periodic boundary conditions 27 Perturbation theory – degenerate 68 – nondegenerate 68 Phase transition in QHE 543 Phonon 109, 208 – acoustic 110 – creation and annihilation operators 125 – dispersion curves 109, 110, 113 – – AlAs 495 – – ·-Sn 120 – – CdS 117 – – diamond 121 – – GaAs 111, 495 – – Si 111 – dispersion relation in Si 2Ge 2 496 – in polar SL’s 502 – in tunneling devices 532 – longitudinal 110 – occupation number 126, 211, 382 – optical 110, 300 – quantization 109, 110 – Raman spectra in semiconductors 388 – Raman spectra in superlattices 519 – sidebands in emission spectra 366 – springs and balls models 109 – transverse 110, 142 – under uniaxial stress 426 – velocity 210 Phonon-polariton 292, 295–298 Phosphine 6 Phosphorus 2 Photocathodes – efficiency 574 – GaAs 432 Photoconductive responce in semiconductor 569 Photoconductivity – extrinsic 312 – intrinsic 312 – phonon-assisted 311 Photoelectron spectra 66 – angle-integrated 440 Photoelectron spectrometer (diagram) 435 Photoelectron spectroscopy 427, 428, 429 – angle-integrated 435 – angle-resolved (ARPES) 435 – diagram 434 – origin of energy 437 Photoemission 429, 431 – direct-transitions scheme 449 – indirect-transitions model 449 – one-step model 439 – surface preparation 437 – three-step model 440, 446 – threshold spectra of Si 434 photoemission spectroscopy – UV 434 – X-ray 434 Photoexcitation spectra of group III acceptors in Si 570 Photoluminescence 244, 345 – determination of carrier temperature 354 – from GaAs 353 Photoluminescence excitation spectroscopy (PLE) 369 – correspondence with absorption spectra 370 Photon counting electronics 387 Photon energies 247 Photon energy density 347 Photon-assisted tunneling 325 Photon-assisted photoconductivity 311 Photon-exciton interaction 279 Photon occupation number 346, 347 Photon to polariton conversion 285 Photons, zero-point motion 346 Photoreflectance 329 – of GaAs near E 0 331 – of Ge with different isotopic masses 331 Photothermal ionization spectroscopy (PTIS) 311 – of ultrapure Ge 314 – spectrum of P in Si 313 Photothreshold energy 432, 438 Piezoelectric effect 130 Piezoelectric electron-phonon interaction 131, 213 – in wurtzite semiconductors 156 Piezoelectric field 131 Piezoreflectance 321, 340 – experimental setup 321 – spectra of CdTe 322 Pikus and Bir strain Hamiltonian 127, 147 Planck distribution 422 Planck’s radiation law 422 Plasma 335 – edge 310
– frequency 253, 306, 335 – – of valence electrons 422 – – screened 306 – oscillations 335 – wave 335 Plasmon-LO phonon coupled modes 338 Plasmons 335, 422 Pockels effect 339 Point defects 160 Point group 27 – C 2d 52 – C 3v 50 – C 2v 51 – O h 38 – T d 35 Poisson’s equation 462 Polariton – bottleneck 363 – Brillouin scattering in GaAs 420 – dispersion in GaP 393 – dispersion curves 419 – emission 363 – emission spectra in CdS, CdSe, CuCl, GaAs 364 – group velocity 363 – lower and upper branches 364, 393 – transmission coefficients 363 – scattering 284 Polarity 304 – Harrison 304 Polyacetylene 1, 4 Polydiacetylene 4 Porous Si 351 Porto notation in Raman scattering 380 Position-sensitive photomultiplier tubes 387 Positronium 277 Primitive cell 30 Primitive lattice vectors 22 Primitive reciprocal lattice vectors 23 Principle of detailed balance 208, 347, 422 Projection operators 45 Propagators 395 Pseudo-angular momentum of acceptor levels 177 Pseudo-scalar 38 Pseudo-vector 39 Pseudo-wave equation 60 Pseudo-wavefunction 59 Pseudodielectric functions 248 Pseudomorphic growth 474 Pseudopotential 59 – atomic 61 – hard core 59 – local 53 – nonlocal 53 – soft core 50 – ultrasoft 67 Pseudopotential band structure calculation by hand 98–101 Pseudopotential form factor 61–63, 66 – antisymmetric 62 – for group IV and zincblende semiconductors 63 – symmetric 62 Pseudopotential in superlattice 488 Pseudopotential method 316 – ab initio 66, 558 – band structure calculation 58 – empirical 66, 558 – self-consistent 66 Q Subject Index 769 Quantized Hall resistance 577 Quantum confinement 470, 471 – of electrons and holes 475 Quantum dots 12, 470 Quantum Hall droplet 540 Quantum Hall Effect (QHE) 470, 533 – discovery 576 – effect of disorder 541 – experiment of von Klitzing, Pepper and Dorda 538, 539 – fractional 470, 534 – gauge invariance 577 – integral 534 – resistance standard 541, 576 – transverse and longitudinal resistivity 540 Quantum of resistance 541 Quantum number, principal 166 Quantum wells (QW’s) 473 – absorption spectra 554 – based on GaAs and III–V semiconductors 370 – classification 478 – confinement of electrons 480, 484 – confinement of holes 483, 485 – excitonic effect 290 – growth 5, 11 – hot luminescence 494 – mass reversal 487 – phonons (see also superlattices) 495 – photoluminescence excitation (PLE) spectra 369 – Raman spectra (see also superlattices) 513 – subbands 484, 494 – transmission electron micrograph (TEM) 474 – transmission spectrum 491
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Appendix A: Pioneers of Semiconduct
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Ultra-Pure Germanium 555 Ultra-Pure
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References Ultra-Pure Germanium 557
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Two Pseudopotential Methods: Empiri
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The Early Stages of Band-Structures
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Cyclotron Resonance and Structure o
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References Cyclotron Resonance and
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Optical Properties of Amorphous Sem
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Optical Spectroscopy of Shallow Imp
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Page 21 and 22:
Page 23 and 24:
On the Prehistory of Angular Resolv
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The Discovery and Very Basics of th
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The Birth of the Semiconductor Supe
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Number of papers 500 200 100 50 20
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Appendix B: Solutions to Some of th
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Solution to Problem 2.6 585 transfo
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⎧ ⎫ 2apple ⎪⎨ cos (y z)
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Partial solution to Problem 2.8 589
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Solution to Problem 2.16 Solution t
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Solution to Problem 2.20 597 to the
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Therefore the result of I ′ on
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Solution to Problem 3.2(c) Solution
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Solution to Problem 3.5 603 Similar
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Solution to Problem 3.7 (b and c) 6
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u3. The above equation can be reduc
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Solution to Problem 3.8 (a, c and d
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Solution to Problem 3.11(a,b and c)
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Solution to Problem 3.16 613 (1) Al
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Solution to Problem 3.17 Solution t
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Solution to Problem 3.17 617 forces
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Solution to Problem 4.1 619 the abo
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C dz ′ z ′ i° Solution to Pro
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R -R A y E’-E y E’-E R x Soluti
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Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
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Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
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A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
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Solution to Problem 8.9 661 of 19.5
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Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
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Chapter 2 693 and zinc-blende group
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Chapter 3 695 Inelastic x-ray Scatt
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Chapter 4 697 results from a better
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Chapter 5 699 K. Alberi, K. M. Yu,
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Chapter 5 701 P. Ramvall, N. Carlss
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Chapter 6 Ab initio calculations of
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Chapter 6 705 Strain-induced birefr
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Chapter 7 707 S. Baroni, S. de Giro
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Chapter 7 709 W. Windl, K. Karch, P
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Chapter 8 711 Strain Shift Coeffici
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Chapter 9 713 Z. J. Zhao, F. Liu, L
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Chapter 9 715 S. F. Ren, W. Cheng,
Page 165: Chapter 9 717 V. P. Gusynin, S. G.
Page 168 and 169: 720 References tions II. Misfitting
Page 170 and 171: 722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 192 and 193: 744 References 7.122 D. C. Reynolds
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 200 and 201: 752 References 9.68 J. P. Palmier:
Page 203 and 204: Subject Index A ·-Sn (gray tin) 95
Page 205 and 206: C c(2 × 8)(111) surface of Ge - di
Page 207 and 208: Dielectric function 117, 246, 253,
Page 209 and 210: Emission rate vs frequency in Ge 34
Page 211 and 212: Galena (PbS) 1 Gamma-ray detectors
Page 213 and 214: Insulators 1 Integral quantum Hall
Page 215: - - vs T 222 - temperature dependen
Page 219 and 220: Resonant Raman profile 403 Resonant
Page 221 and 222: - - LA phonons 512 - - LO phonons 5
Page 223: - structure 142 - symmetry operatio
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