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10. Appendix

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752 References<br />

9.68 J. P. Palmier: Miniband transport and resonant tunneling in superlattices, in<br />

Resonant Tunneling in Semiconductors, ed. by. L. L. Chang (Plenum, New York<br />

1991) pp. 361–375<br />

E. E. Mendez, W. I. Wang, B. Ricco, L. Esaki: Resonant tunneling of holes in<br />

GaAs–GaAlAs superlattices. Appl. Phys. Lett. 47, 415–417 (1985). For this and<br />

related work Mendez was awarded the Prince of Asturias Prize, 1998<br />

9.69 E. Merzbacher: Quantum Mechanics (Wiley, New York 1961) pp. 94–97<br />

9.70 D. Z.-Y. Ting, S. K. Kirby, T. C. McGill: Interface roughness effects in resonant<br />

tunneling structures. Appl. Phys. Lett. 64, 2004–2006 (1994)<br />

9.71 T. P. E. Broekaert, W. Lee, C. G. Fonstad: Pseudomorphic In 0.53Ga0.47As/AlAs/<br />

InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at<br />

room temperature. Appl. Phys. Lett. 53, 1545–1547 (1988)<br />

9.72 K. von Klitzing, G. Dorda, M. Pepper: New method for high-accuracy determination<br />

of the fine-structure constant based on quantum Hall resistance. Phys.<br />

Rev. Lett. 45, 494–497 (1980)<br />

9.73 D. C. Tsui, H. L. Störmer, A. C. Gossard: Two dimensional magnetotransport in<br />

the extreme quantum limit. Phys. Rev. Lett. 45, 1559–1562 (1982)<br />

9.74 L. D. Landau: Diamagnestism of metals (in German). Z. Physik. 64, 629–637<br />

(1930)<br />

9.75 L. D. Landau, E. N. Lifshitz: Quantum Mechanics, 3rd edn. (Pergamon, Oxford<br />

1977)<br />

9.76 J. M. Ziman: Principles of the Theory of Solids, 2nd edn. (Cambridge Univ.<br />

Press, Cambridge 1972) pp. 313–326<br />

9.77 M. Brodsky (ed.): Amorphous Semiconductors, 2nd edn., Topics Appl. Phys,<br />

Vol. 36 (Springer, Berlin, Heidelberg 1985)<br />

9.78 J. Tauc: Amorphous and Liquid Semiconductors (Plenum, New York 1974)<br />

9.79 H. Störmer: Fractional Quantum Hall effect today, Solid State Commun. 107,<br />

617–622 (1998)<br />

9.80 S. M. Girvin: Exotic quantum order in two-dimensional systems, Solid State<br />

Commun. 107, 623–628 (1998)<br />

9.81 D. C. Tsui, H. Störmer, A. C. Gossard: Two-dimensional magnetotransport in<br />

the extreme quantum limit. Phys. Rev. Lett. 48, 1559–1562 (1982).<br />

9.82 R. B. Laughlin: Anomalous QHE: An incompressible fluid with fractionally<br />

charged excitations. Phys. Rev. Lett. 50, 1395–1398 (1983)<br />

9.83 R. Loudon: Raman effect in crystals. Adv. Phys. 13, 423–482 (1964); erratum<br />

ibid. 14, 621 (1965)<br />

General Reading<br />

Growth of Quantum Wells and Superlattices<br />

Hermann M. A., H. Sitter: Molecular Beam Epitaxy, 2nd. edn., Springer Ser. Mater.<br />

Sci., Vol. 7 (Springer, Berlin, Heidelberg 1996)<br />

Milnes A. G., D. L. Feucht: Heterojunctions and Metal-Semiconductor Junctions (Academic,<br />

NY, 1972)<br />

Panish M. B., H. Temkin: Gas Source Molecular Beam Epitaxy, Springer Ser. Mater.<br />

Sci., Vol. 26 (Springer, Berlin, Heidelberg 1993)<br />

Ploog K.: Formation of semiconductor interfaces during molecular beam epitaxy, in<br />

Semiconductor Interfaces: Formation and Properties, ed. by G. LeLay, J. Denien,<br />

N. Boccara (Springer, Berlin, Heidelberg 1987)

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