10. Appendix

736 References
6.116 D. E. Aspnes: Electric field effects on the dielectric constant of solids. Phys.
Rev. 153, 972–982 (1967)
6.117 W. Franz: Influence of an electric field on an optical absorption edge (in German).
Z. Naturforsch. 13a, 484–489 (1958)
6.118 L. V. Keldysh: Effect of a strong electric field on the optical properties of insulating
crystals. Sov. Phys. – JETP 34, 788–790 (1958)
6.119 J. P. Estrera, W. M. Duncan, R. Glosser: Complex Airy analysis of photoreflectance
spectra for III–V semiconductors. Phys. Rev. B 49, 7281–7294 (1994)
6.120 D. E. Aspnes, A. A. Studna: Schottky barrier electroreflectance: Application to
GaAs. Phys. Rev. B 7, 4605–4625 (1973)
6.121 D. E. Aspnes. Schottky barrier electroreflectance of Ge: Non-degenerate and
optically degenerate critical points. Phys. Rev. B 12, 2297–2310 (1975)
6.122 M. Kuball: Effects of hydrogen exposure, doping, and electric fields on the
properties of GaAs surfaces. Dissertation, University of Stuttgart (1995)
6.123 E. Gharhamani, D. J. Moss, J. E. Sipe: Linear and nonlinear optical properties
of (GaAs)m/(AlAs)n superlattices. Phys. Rev. B 43, 9269–9272 (1991)
6.124 D. F. Blossey: Wannier excitons in an electric field: II. Electroabsorption in
direct-band-gap solids. Phys. Rev. 3, 1382–1391 (1971)
6.125 J. S. Kline, F. H. Pollak, M. Cardona: Electroreflectance in the Ge-Si alloys.
Helv. Phys. Acta 41, 968–976 (1968)
6.126 M. Cardona, K. L. Shaklee, F. H. Pollak: Electroreflectance at a semiconductorelectrolyte
interface. Phys. Rev. 154, 696–720 (1967)
6.127 J. G. Gay: Screening of excitons in semiconductors. Phys. Rev. B 4, 2567–2575
(1971)
6.128 C. Parks, A. K. Ramdas, S. Rodriguez, K. M. Itoh, E. E. Haller: Electronic
band structure of isotopically pure Ge: Modulated transmission and reflectivity
study. Phys. Rev. B 49, 14244–14250 (1994)
6.129 S. Zollner, M. Cardona, S. Gopalan: Isotope and temperature shifts of direct
and indirect band gaps in diamond-type semiconductors. Phys. Rev. B 45,
3376–3385 (1992)
6.130 X. Yin, X. Guo, F. H. Pollak, Y. Chan, P. A. Mantau, P. D. Kirchner, G. D. Petit,
J. M. Woodal: Photoreflectance study of the surface Fermi level at a (001) nand
p-type GaAs surface. J. Vac. Sci. Technol. A 10, 131–136 (1992)
6.131 I. Kamiya, D. E. Aspnes, L. T. Florez, J. P. Harbison: Reflectance difference
spectroscopy on (001) GaAs surfaces in ultrahigh vacuum. Phys. Rev. B 46,
15894–15904 (1992)
6.132 W. Richter: Optical in-situ control during MOVPE and MBE growth. Philos.
Trans. R. Soc. (London) A 344, 453–467 (1993)
6.133 M. Cardona, F. H. Pollak, K. L. Shaklee: Electroreflectance in semiconductors.
J. Phys. Soc. Jpn. Suppl. 21, 89–94 (1966)
6.134 D. E. Aspnes. A. A. Studna: Anisotropies in the above-band-gap optical spectra
of cubic semiconductors. Phys. Rev. Lett. 54, 1956–1959 (1985)
6.135 W. L. Mochan, R. G. Barrera: Local field on the surface conductivity of adsorbed
overlayers. Phys. Rev. Lett. 56, 2221–2224 (1986)
6.136 Y. Chang. D. E. Aspnes: Theory of the dielectric function anisotropy of (001)
GaAs (2×1) surface. Phys. Rev. B 41, 12002–12012 (1990)
6.137 D. E. Aspnes: Observation and analysis of epitaxial growth with reflectancedifference
spectroscopy. J. Electron. Mater. B 30, 109–119 (1995)
6.138 L. X. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E L. Shirley, W.
Richter and M. Cardona: Dielectric function of wurtzite GaN and AlN thin
films. Sol. Stat. Commun. 102, 129 (1999)