10. Appendix

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760 Subject Index Edge-electrons 540 EELS (Electron Energy Loss Spectroscopy) 428, 430 Effective charge – dependence on strain 339 – dynamic 304 – LCAO method 304 – pseudopotential method 304 – static 304 Effective ionic charge 297 Effective mass 69 – k · p method 69 – negative 70 – of electrons in L valleys of GaAs 228 – of electrons in group IV, III–V and II–VI semiconductors 71 – of holes in group IV and III-V semiconductors 75, 200 Effective mass approximation 166, 204 Effective medium 505 Effusion cell 9 Eigenvalues – continuous 166 – discrete 166 Eigenvectors of phonons in Si 2Ge 2 SL’s 497 Einstein’s A and B coefficients 346, 422 Einstein’s photoemission law 432 – test 433 EL2 197 Elastic compliance tensor 138 Elastic moduli – bulk 110 – shear 110 Elastic scattering 374 Elastic stiffness tensor 140 Elastic waves in zincblende-type crystals 141 Elasto-optic coefficients 513 Elasto-optic constants 405 Electric dipole 259 – approximation 257, 259 – moment (second order) 302 – operator 46 – transition probability 260 Electric quadrupole 260, 409 Electric susceptibilty 244 Electric-field-induced quantization 580 Electrical transport in MQW’s 525 Electroluminescence 345, 346, 354 Electromechanical tensor 130, 132 – table 132 – Zinc-Blende-and Wurtzite-Type semiconductors 156 Electron affinity 438 Electron acoustic-phonon interaction 19 – at degenerate bands 129 – piezoelectric 130 Electron analyzer – cylindrical mirror 437 – retarding grid 437 Electron confinement energies vs well width in an AlInAs/InP QW 484 Electron-electron interaction 276 Electron energy loss spectroscopy (EELS) 430 Electron escape depth 450 – universal curve 432 Electron-hole pairs, uncorrelated vs exciton description 278 Electron LO-phonon interaction in quantum wells – dielectric models 522 – Huang-Zhu model 523 – macroscopic models 521 – mechanical models 522 Electron multiplier 437 Electron optical-phonon interaction 132 Electron-phonon Hamiltonian piezoelectric 131 Electron-phonon interactions 19, 107, 121 – degenerate heavy and light hole bands at ° 127 – effect on bandgaps 341 – Hamiltonian 394 – intervalley 135 – in Si and GaAs 135 Electron-radiation interaction Hamiltonian 257, 394 Electron spin 71 Electron storage ring 435 Electron volts 247 Electronegativity 181 Electronic band structure (see Band structure) 21 Electronic potential, adiabatic 107 Electrons and holes in superlattices 487 – experimental results 489 Electrons in a magnetic field – classical treatment 232 – quantum treatment 534 Electrooptic functions 325 Electrooptic tensors 339 Electrooptical energy 323 Electroreflectance 315, 322 – contactless 330 – low field 327 – of GaAs at E 0 326 – third derivative 327 Electrotransmission 315 Ellipsometry 249, 334 Elliptically polarized light 250 Emission of photons 258
Emission rate vs frequency in Ge 348 Emitter in resonant tunnel device double barriers 524 Empty lattice 48 Energy band mapping 574 Energy distribution from photoemission in graphite 446 Energy gap 1, 61 Energy levels in QW 489 Energy loss function – of Ge 255 – of Si 254 Energy relaxation time 227 Envelope function 164, 166, 169 Envelope function approximation 478 Envelope wave functions 164 E 0 transition 266 Epilayer 477 Â r(∞) table 331 Esaki tunnel diode 228, 525, 578 Escape depth of electrons 431 EuS 4 Evanescent waves 480 Exchange and correlation 67 Exciton 194, 276, 336 – at indirect edge 273 – at M 0 critical points 279 – at M 1 critical points 288 – at M 3 critical points 291 – binding energy and Bohr radius in zincblende and wurtzite semiconductors 282 – bound to neutral donors in CdS – – emission spectra 368 – – quenching by IR radiation 368 – center-of-mass dispersion 278 – continuum states 336 – envelope wavefunction 279 – in CdS 284, 366 – recombination 367 – translational mass 278 Exciton absorption – continuum 287 – discrete spectra 286 Exciton absorption spectra – in Cu 2O 288 – in GaAs 287 Exciton binding energy to neutral donor 367 Exciton confinement 472 Exciton dispersion from Resonant Raman Scattering 416 Exciton relaxation rate 426 Exciton Rydberg 281 Exciton-LO phonon interaction wave vector dependence 411 Exciton-polaritons 279, 383, 419 – dispersion 337 – – CdS 283 – – emission 363–365 – – GaAs 421 Extended states 163 Extended zone scheme 21 External modulation spectra 318 Extinction coefficient 246 Extrinsic defects 160 Extrinsic electrons optical response 305 F f-process 216 Fabry-Perot interferometers 400 Fabry-Perot resonator 579 Face-centered cubic (fcc) lattice 23 – Brillouin zone template 97 Factor group 29, 30 Fano interference 290 Faraday cage 435, 437 Faraday rotations 4 Femtoseconds 226 Fermi Golden Rule 257, 260, 285, 472 Fermi level 61, 438 – at surface 463 – in 2D electron 537 – pinning 460 Fermi-Dirac distribution function 206 Ferroelectrics 1, 4, 302 Ferromagnetism 4 Feynman diagrams 271, 395 – exercises 423 – for one-phonon Stokes Raman scattering 396 – symbols 395 Field effect transistors 225, 576 Filling factor of Landau levels 536 Final state interaction 356 First Brillouin Zone 21 Fluorite (CaF 2) crystal structure 32 Flux quantum 536 Folded acoustic phonon modes 494, 499 – scattering efficiency 513 Folded optic phonons 498 Forbidden excitons spectrum of Cu 2O 289 Forbidden Raman scattering in CdS 412 Force constants (interatomic) 108 Fourier transforms 245 Fractals 545 Fractional quantum Hall effect 538, 541 Franck-Condon effect 570 Subject Index 761
Page 1 and 2:
Appendix A: Pioneers of Semiconduct
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Ultra-Pure Germanium 555 Ultra-Pure
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References Ultra-Pure Germanium 557
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Two Pseudopotential Methods: Empiri
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The Early Stages of Band-Structures
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Cyclotron Resonance and Structure o
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References Cyclotron Resonance and
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Optical Properties of Amorphous Sem
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Optical Spectroscopy of Shallow Imp
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Page 21 and 22:
Page 23 and 24:
On the Prehistory of Angular Resolv
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The Discovery and Very Basics of th
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The Birth of the Semiconductor Supe
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Number of papers 500 200 100 50 20
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Appendix B: Solutions to Some of th
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Solution to Problem 2.6 585 transfo
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⎧ ⎫ 2apple ⎪⎨ cos (y z)
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Partial solution to Problem 2.8 589
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Page 41 and 42:
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Solution to Problem 2.16 Solution t
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Solution to Problem 2.20 597 to the
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Therefore the result of I ′ on
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Solution to Problem 3.2(c) Solution
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Solution to Problem 3.5 603 Similar
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Solution to Problem 3.7 (b and c) 6
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u3. The above equation can be reduc
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Solution to Problem 3.8 (a, c and d
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Solution to Problem 3.11(a,b and c)
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Solution to Problem 3.16 613 (1) Al
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Solution to Problem 3.17 Solution t
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Solution to Problem 3.17 617 forces
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Solution to Problem 4.1 619 the abo
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C dz ′ z ′ i° Solution to Pro
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R -R A y E’-E y E’-E R x Soluti
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Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
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Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
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A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
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Solution to Problem 8.9 661 of 19.5
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Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
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Chapter 2 693 and zinc-blende group
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Chapter 3 695 Inelastic x-ray Scatt
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Chapter 4 697 results from a better
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Chapter 5 699 K. Alberi, K. M. Yu,
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Chapter 5 701 P. Ramvall, N. Carlss
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Chapter 6 Ab initio calculations of
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Chapter 6 705 Strain-induced birefr
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Chapter 7 707 S. Baroni, S. de Giro
Page 157 and 158: Chapter 7 709 W. Windl, K. Karch, P
Page 159 and 160: Chapter 8 711 Strain Shift Coeffici
Page 161 and 162: Chapter 9 713 Z. J. Zhao, F. Liu, L
Page 163 and 164: Chapter 9 715 S. F. Ren, W. Cheng,
Page 165: Chapter 9 717 V. P. Gusynin, S. G.
Page 168 and 169: 720 References tions II. Misfitting
Page 170 and 171: 722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 192 and 193: 744 References 7.122 D. C. Reynolds
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 200 and 201: 752 References 9.68 J. P. Palmier:
Page 203 and 204: Subject Index A ·-Sn (gray tin) 95
Page 205 and 206: C c(2 × 8)(111) surface of Ge - di
Page 207: Dielectric function 117, 246, 253,
Page 211 and 212: Galena (PbS) 1 Gamma-ray detectors
Page 213 and 214: Insulators 1 Integral quantum Hall
Page 215 and 216: - - vs T 222 - temperature dependen
Page 217 and 218: - frequency 253, 306, 335 - - of va
Page 219 and 220: Resonant Raman profile 403 Resonant
Page 221 and 222: - - LA phonons 512 - - LO phonons 5
Page 223: - structure 142 - symmetry operatio
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10. Appendix

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