10. Appendix

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774 Subject Index Triple spectrometers 386 Tunable cw lasers 372 – dye laser 420 – IR laser 572 Tunnel diode 525 Tunneling 473, 525, 567 Two-dimensional crystals 445, 574 Two-dimensional critical points (see also van Hove singularities) 266 Two-dimensional exciton 291 Two-phonon absorption 302 – spectra of Si and Ge 301 Two-phonon Raman scattering 377 – Ge 390, 391 – Si 390 Two-thirds rule for spin-orbit splitting 266 Type I and type II MQW’s 478 – type IIA 478 – type IIB 478 Type I and type II superlattice 478 – type IIA 478 – type IIB 478 Type III MQW’s and superlattices 478, 479 U Ultrahigh vacuum 8, 248, 433 Ultra-pure germanium 555 Ultraviolet photoemission spectroscopy (UPS) 9, 428, 436 – effect of band bending 463 – spectrum of III–V compounds 443 Umklapp process 216 Uncertainty principle 161 Uniaxial crystals 246 Uniaxial stress 138 Unit element 25 Units (see inside covers) – frequency of electromagnetic waves 247 – pressure 434 V Vacancies 160, 182 – binding energy 192 – in diamond- or zincblende-type 183 Vacuum level 438 Vacuum ultraviolet 422 Valence band – dispersion in GaAs/AlGaAs QW's as determined by hot luminescence 493 – extrema 126 – Ge determined by UPS 449 – parameters A, B, C 81 – parameters of diamond and zincblende semiconductor 75 Valence electrons 18, 59 Valence force field method 116 – force constants 115 Valence plasmons 430 – in GaP 430 Valley-orbit coupling 171, 311 Valley-orbit splitting of donor levels 173 Van der Pauw method 234–236 Van der Waals interaction 3, 356, 445 Van Hove singularities 261, 262, 267, 325, 336, 566 – in Â i 262 – in one, two, and three dimensions 263 Van Roosbroek-Shockley relation 348 Vapor-phase epitaxial growth 332 Variational technique for impurity levels 172 Velocity overshoot 226 Velocity saturation 226–228 Vertex in Feynman diagrams 395 Vertical transition 259 Vibrational properties of semiconductors 107 Videotelephony 574 Virtual crystal approximation 193 Virtual crystal potential 192 Virtual transitions 271, 327 Volmer-Weber growth 11 Volume deformation potential 125, 238 – tight-binding model 148 Volume dilation 124 Von Klitzing constant 576 W Wannier excitons 276, 281 – absorption spectrum 336 Wannier functions 162, 279 Wannier-Mott excitons 277 Warm carriers 227 Wave nature of electron 574 Wave vectors 21 Wavenumber 247 Wetting layer 11 Work function 438 Wurtzite crystal – acoustic phonons 147 – electromechanical tensor elements 132 – piezoelectric electron-phonon interactions 156 – phonons 145 – stiffness tensor 144
– structure 142 – symmetry operations 145 X X-rays 9 X-ray fluorescence 428 X 1–X 3 splitting in zincblende materials 443 XES (X-rays fluorescence emission spectroscopy) 431 X-rays photoemission spectroscopy (XPS) 9, 428, 436 – effect of band bending 463 – spectrum of III–V compounds 443 Z Zener band-to-band tunneling 581 Zero bandgap semiconductor 2, 95 Zero-point motion 346 – phonons 378 – photons 346 Zincblende (ZnS) 1, 423 – crystal structure 22 – elastic waves 141 – group of ¢ and representation 51 – group of X and representation 52 – nearly-free-electron band structure 48 – symmetry operations 30 – zone center TO and LO phonons 111, 112 ZnO 3 ZnS (see also zincblende) 143 ZnSe – band structure 65 – effective charges 305 – selective excitation spectra of excitons bound to Na and Li donors 373 – self-compensation 182 ZnTe – effective charges 305 – imagingary part of dielectric function 289 – self-compensation 182 ZnSiP 2 4 Zone folding and splittings of phonons 497 Subject Index 775
Page 1 and 2:
Appendix A: Pioneers of Semiconduct
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Ultra-Pure Germanium 555 Ultra-Pure
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References Ultra-Pure Germanium 557
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Two Pseudopotential Methods: Empiri
Page 9 and 10:
The Early Stages of Band-Structures
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Cyclotron Resonance and Structure o
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References Cyclotron Resonance and
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Optical Properties of Amorphous Sem
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Optical Spectroscopy of Shallow Imp
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Page 21 and 22:
Page 23 and 24:
On the Prehistory of Angular Resolv
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The Discovery and Very Basics of th
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The Birth of the Semiconductor Supe
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Number of papers 500 200 100 50 20
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Appendix B: Solutions to Some of th
Page 33 and 34:
Solution to Problem 2.6 585 transfo
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⎧ ⎫ 2apple ⎪⎨ cos (y z)
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Partial solution to Problem 2.8 589
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Solution to Problem 2.16 Solution t
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Solution to Problem 2.20 597 to the
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Therefore the result of I ′ on
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Solution to Problem 3.2(c) Solution
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Solution to Problem 3.5 603 Similar
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Solution to Problem 3.7 (b and c) 6
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u3. The above equation can be reduc
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Solution to Problem 3.8 (a, c and d
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Solution to Problem 3.11(a,b and c)
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Solution to Problem 3.16 613 (1) Al
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Solution to Problem 3.17 Solution t
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Solution to Problem 3.17 617 forces
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Solution to Problem 4.1 619 the abo
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C dz ′ z ′ i° Solution to Pro
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R -R A y E’-E y E’-E R x Soluti
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Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
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Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
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A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
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Solution to Problem 8.9 661 of 19.5
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Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
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Chapter 2 693 and zinc-blende group
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Chapter 3 695 Inelastic x-ray Scatt
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Chapter 4 697 results from a better
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Chapter 5 699 K. Alberi, K. M. Yu,
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Chapter 5 701 P. Ramvall, N. Carlss
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Chapter 6 Ab initio calculations of
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Chapter 6 705 Strain-induced birefr
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Chapter 7 707 S. Baroni, S. de Giro
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Chapter 7 709 W. Windl, K. Karch, P
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Chapter 8 711 Strain Shift Coeffici
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Chapter 9 713 Z. J. Zhao, F. Liu, L
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Chapter 9 715 S. F. Ren, W. Cheng,
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Chapter 9 717 V. P. Gusynin, S. G.
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720 References tions II. Misfitting
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722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 192 and 193: 744 References 7.122 D. C. Reynolds
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 200 and 201: 752 References 9.68 J. P. Palmier:
Page 203 and 204: Subject Index A ·-Sn (gray tin) 95
Page 205 and 206: C c(2 × 8)(111) surface of Ge - di
Page 207 and 208: Dielectric function 117, 246, 253,
Page 209 and 210: Emission rate vs frequency in Ge 34
Page 211 and 212: Galena (PbS) 1 Gamma-ray detectors
Page 213 and 214: Insulators 1 Integral quantum Hall
Page 215 and 216: - - vs T 222 - temperature dependen
Page 217 and 218: - frequency 253, 306, 335 - - of va
Page 219 and 220: Resonant Raman profile 403 Resonant
Page 221: - - LA phonons 512 - - LO phonons 5
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