10. Appendix

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766 Subject Index Light emission spectroscopies 345 Light emitting diodes 351 Light hole 80, 487 – mass 75, 80 Light scattering as a modulation spectroscopy 404 Light scattering spectroscopies 375 Line defects 160 Linear combination of atomic orbitals (LCAO) 83 Linear electro-optic effect 329 Linear k term in the band dispersion 77 Liquid Phase Epitaxy (LPE) 13 Liquid-encapsulated Czochralski (LEC) method 6 Local density approximation (LDA) 67 Local density-of-states 186 – associated with defect 187 Local dielectric reponse 245 Local field corrections 244 Local pseudopotential 53 Local vibrational modes 408 Localized states 163, 539 Lock-in amplifiers 315 Long wavelength vibrations (in zincblende and diamond crystals) 41 Long-range order 566 Longitudinal charge 304 – in zincblende-type semiconductor 305 Longitudinal excitations 430 Longitudinal exciton frequency 337 Longitudinal frequency 294 Longitudinal optical (LO) phonon 111, 294, 295 – LO-TO splitting 112 – – and interface modes 509 Longitudinal resistivity 538 Lorentz equation 232 Loss function 430 Low Energy Electron Diffraction (LEED) 9, 444 Low frequency dielectric constant 295 Löwdin orbitals 87, 163, 187 Löwdin’s perturbation method 75 Luminescence 285, 345 – excitation, thermalization and recombination 349 – from excitons and bound excitions in GaAs 362 – from hot electrons to acceptors 492 – from N in GaP 351 Luminescence excitation spectroscopy 369 Luttinger 82 – Hamiltonian 82, 174, 200, 484 – parameters 82, 175, 484 Lyddane-Sachs-Teller (LST) relation 295, 335 M Macroscopic electrodynamics 244 Macroscopic longitudinal field 380 Madelung constant 454 Madelung energy contribution to core level binding energy 454 Magnetic dipole transitions 260, 408 Magnetic induction 296 Magnetic quantum numbers 73 Magnetic semiconductors 4 Magneto-conductivity tensor 233, 537 Magneto-resistivity tensor 537 Magneto-transport 232 Magnetoplasma resonance 563 Magnetoresistance 234 – multi-valley models 561 Magneto-resistivity tensor 535 Mahan cone 444 – inverse 456 Mass reversal – in QW 485 – under uniaxial stress 485 Mass spectrometry 9 Matrix element theorem 46, 70, 276, 424 Matrix product 41 Maxwell’s equations 296 Maxwell-Boltzmann distribution, drifted 238 Mean free path 471 Mean-field approximation 19 Mechanical boundary conditions in QW 500 Mepsicron 387 Mesoscopic quantum regime 579, 581 Metal-oxide-semiconductor field effect transistor(MOSFET) 536 Metal-oxide-semiconductor structure 533 Metalorganic chemical vapor deposition (MOCVD) 8 Methane molecule 26, 35 Method of invariants 127 Mg 2Ge, Mg 2Si, Mg 2Sn 32 Microwave generators 232 Microwave oscillator 526 Miller Indices 27 Minibands 486, 581 Minority carrier radiative lifetime 351 Misfit dislocations 12, 477 Mobility 205 – due to ionized impurity scattering 220 – modulation doped GaAs vs temperature 224 – n-GaAs vs temperature 222 – n-Si 222 – – ionized impurity scattering 222
– – vs T 222 – temperature dependence 221 Mobility edge – in amorphous semiconductors 539 – in QHE 539 MODFET 225 Modified Airy function 325 Modulation doping 223 Modulation of critical points 340 Modulation spectroscopy 315, 316 Molecular beam epitaxy (MBE) 9, 469 Molecular orbitals 83 Momentum relaxation time 209, 228 Monochromators 250 Monte Carlo simulation 209, 221 MoS 2 3 Mott transition 355 Multiple quantum well (MQW, see also quantum wells) 473 – classification 478 Multichannel detectors 250, 386 Multiphonon lattice absorption 299 Multiphonon Raman scattering – cascade model 413 – in CdS 414 – multiplication of representations 25 N Nanocrystals 351 Nanostructures 469 Native defect 160 Nd:YAG laser 385 Nearly-free-electron model 48 Nearly-free-electron wavefunctions in zincblende crystals 43 Negative differential resistance (NDR) 227, 228, 526, 580 Negative U 182 Nipi structure 477 Nitrogen in GaAs, GaAsP 192–197 Nobel laureates 3, 67, 110, 228, 375, 432, 433, 458, 470, 477, 545 Non-symmorphic groups 28, 31 Nonequilibrium carriers 225 Nonlinear optical processes 244 Nonlocal dielectric response 245 Nonlocal pseudopotential 53 Nonparabolic bands 339 Nonparabolicity constant 340 Nonradiative recombination rate 352 Nonradiative traps 349 Normal modes (phonons) 109 Normal scattering process 216 Notch filter 386 O O h point group 38 – basis function 39 – character table 38 One-phonon Raman spectra in GaAs, InP, AlSb, Si 389 One-step photoemission model 439 Onsager relations 245 Optical absorption at indirect bandgaps 136, 271 Optical axis 246 Optical deformation potential d 0 calculated with the tight-binding model 153 Optical mass 339 Optical modulators 4 Optical penetration depth 247 Optical phonon 43, 110 – deformation potential 132 – dependence on strain 339 – scattering 227 Optical spectra of semiconductors 243 – energy of prominent structures 268 Orbital angular momentum 71 Order of a group 33 Organic semiconductors 4 Orthogonality relation for characters 35, 45 Oscillator strength 261 – giant 407 Outgoing Raman resonance 403 – in GaSe 406 Overlap parameter 83–84, 151 – dependence on nearest-neighbor distances 94 – tight binding 95 – universal 94 Overtone scattering 377 P Parametric process 377 Parity 38 – forbidden transitions 276 – selection rule 70 – – for phonons in Ge, Si 302 Partial density-of-states 189 Particle confined in a one-dimensional square well 481 Pauli spin matrices 72 Subject Index 767
Page 1 and 2:
Appendix A: Pioneers of Semiconduct
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Ultra-Pure Germanium 555 Ultra-Pure
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References Ultra-Pure Germanium 557
Page 7 and 8:
Two Pseudopotential Methods: Empiri
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The Early Stages of Band-Structures
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Cyclotron Resonance and Structure o
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References Cyclotron Resonance and
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Optical Properties of Amorphous Sem
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Optical Spectroscopy of Shallow Imp
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Page 21 and 22:
Page 23 and 24:
On the Prehistory of Angular Resolv
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The Discovery and Very Basics of th
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The Birth of the Semiconductor Supe
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Number of papers 500 200 100 50 20
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Appendix B: Solutions to Some of th
Page 33 and 34:
Solution to Problem 2.6 585 transfo
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⎧ ⎫ 2apple ⎪⎨ cos (y z)
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Partial solution to Problem 2.8 589
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Page 41 and 42:
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Solution to Problem 2.16 Solution t
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Solution to Problem 2.20 597 to the
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Therefore the result of I ′ on
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Solution to Problem 3.2(c) Solution
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Solution to Problem 3.5 603 Similar
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Solution to Problem 3.7 (b and c) 6
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u3. The above equation can be reduc
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Solution to Problem 3.8 (a, c and d
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Solution to Problem 3.11(a,b and c)
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Solution to Problem 3.16 613 (1) Al
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Solution to Problem 3.17 Solution t
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Solution to Problem 3.17 617 forces
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Solution to Problem 4.1 619 the abo
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C dz ′ z ′ i° Solution to Pro
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R -R A y E’-E y E’-E R x Soluti
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Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
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Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
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A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
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Solution to Problem 8.9 661 of 19.5
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Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
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Chapter 2 693 and zinc-blende group
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Chapter 3 695 Inelastic x-ray Scatt
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Chapter 4 697 results from a better
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Chapter 5 699 K. Alberi, K. M. Yu,
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Chapter 5 701 P. Ramvall, N. Carlss
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Chapter 6 Ab initio calculations of
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Chapter 6 705 Strain-induced birefr
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Chapter 7 707 S. Baroni, S. de Giro
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Chapter 7 709 W. Windl, K. Karch, P
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Chapter 8 711 Strain Shift Coeffici
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Chapter 9 713 Z. J. Zhao, F. Liu, L
Page 163 and 164: Chapter 9 715 S. F. Ren, W. Cheng,
Page 165: Chapter 9 717 V. P. Gusynin, S. G.
Page 168 and 169: 720 References tions II. Misfitting
Page 170 and 171: 722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 192 and 193: 744 References 7.122 D. C. Reynolds
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 200 and 201: 752 References 9.68 J. P. Palmier:
Page 203 and 204: Subject Index A ·-Sn (gray tin) 95
Page 205 and 206: C c(2 × 8)(111) surface of Ge - di
Page 207 and 208: Dielectric function 117, 246, 253,
Page 209 and 210: Emission rate vs frequency in Ge 34
Page 211 and 212: Galena (PbS) 1 Gamma-ray detectors
Page 213: Insulators 1 Integral quantum Hall
Page 217 and 218: - frequency 253, 306, 335 - - of va
Page 219 and 220: Resonant Raman profile 403 Resonant
Page 221 and 222: - - LA phonons 512 - - LO phonons 5
Page 223: - structure 142 - symmetry operatio
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10. Appendix

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