27.04.2013 Views

10. Appendix

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

Chapter 7 707<br />

S. Baroni, S. de Gironcoli, A. dal Corso, and P Giannozzi: Phonons and Related<br />

Properties from Density-Functional Perturbation Theory. Rev. Mod.<br />

Physics 73, 515–562 (2001).<br />

G. Y. Guo, S. Ishibashi, T. Tamura, and K. Terakura: Static Dielectric Response<br />

and Born Effective Charge of BN Nanotubes from ab initio Finite Electric<br />

Field Calculations. Phys. Rev. B75, 245403/1–7 (2007).<br />

H. Y. Wang, H. Xu, N. D. Zhang, and P. H. Zhang: The Dielectric and Dynamical<br />

Properties of Zinc-blende BN, AlN, and GaN from First-principle<br />

Calculation. Science in China Series G: Physics, Mechanics, Astronomy 51,<br />

1037–1045 (2008).<br />

General Reading<br />

V. G. Plekhanov: Applications of the Isotopic Effect in Solids (Springer Series<br />

in Materials Science) (Springer, Heidelberg, 2004).<br />

Chapter 7<br />

Emission Spectroscopies<br />

During the past decade photoluminescence spectroscopies have continued to<br />

play an important role in the characterization and in basic investigations of<br />

semiconductors. Luminescence has also found an increasing role in applications<br />

such as light emitting diodes, lasers and high efficiency solid state lighting.<br />

Considerable effort has been spent in the investigation of large band gap<br />

II-VI compounds, such as ZnO, and the group III nitrides. Isotopically pure<br />

semiconductors have been used to decrease the width of emission lines and<br />

thus the resolution of emission spectroscopies. A few relevant references are<br />

listed in the following:<br />

U. Kaufman, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan,<br />

and B. Santic: Origin of Defect-Related Photoluminescence Bands in Doped<br />

and Nominally Undoped GaN. Phys. Rev. B59, 5561–5567 (1999).<br />

F. Rossi, and T. Kuhn: Theory of Ultrafast Phenomena in Photoexcited Semiconductors.<br />

Rev. Mod. Physics 74, 895–950 (2002).<br />

Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and<br />

C. T. Lee: Optical Properties of ZnO/GaN heterostructure and its nearultraviolet<br />

Light-Emitting Diodes. Appl. Phys. Lett. 83, 4713–4715 (2003).<br />

D. Pelka and K. Patel: An Overview of LED Applications for General Illumination.<br />

Proceed. of SPIE Conference on Design of Efficient Illumination<br />

Systems 5186, 15–26 (2003).<br />

J. Y. Tsao: Solid State Lighting: Lamps, Chips and Materials for Tomorrow.<br />

IEEE Circuits and Dvices Magazine, 20, 28–37 (2004).

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!