10. Appendix
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Chapter 7 707<br />
S. Baroni, S. de Gironcoli, A. dal Corso, and P Giannozzi: Phonons and Related<br />
Properties from Density-Functional Perturbation Theory. Rev. Mod.<br />
Physics 73, 515–562 (2001).<br />
G. Y. Guo, S. Ishibashi, T. Tamura, and K. Terakura: Static Dielectric Response<br />
and Born Effective Charge of BN Nanotubes from ab initio Finite Electric<br />
Field Calculations. Phys. Rev. B75, 245403/1–7 (2007).<br />
H. Y. Wang, H. Xu, N. D. Zhang, and P. H. Zhang: The Dielectric and Dynamical<br />
Properties of Zinc-blende BN, AlN, and GaN from First-principle<br />
Calculation. Science in China Series G: Physics, Mechanics, Astronomy 51,<br />
1037–1045 (2008).<br />
General Reading<br />
V. G. Plekhanov: Applications of the Isotopic Effect in Solids (Springer Series<br />
in Materials Science) (Springer, Heidelberg, 2004).<br />
Chapter 7<br />
Emission Spectroscopies<br />
During the past decade photoluminescence spectroscopies have continued to<br />
play an important role in the characterization and in basic investigations of<br />
semiconductors. Luminescence has also found an increasing role in applications<br />
such as light emitting diodes, lasers and high efficiency solid state lighting.<br />
Considerable effort has been spent in the investigation of large band gap<br />
II-VI compounds, such as ZnO, and the group III nitrides. Isotopically pure<br />
semiconductors have been used to decrease the width of emission lines and<br />
thus the resolution of emission spectroscopies. A few relevant references are<br />
listed in the following:<br />
U. Kaufman, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan,<br />
and B. Santic: Origin of Defect-Related Photoluminescence Bands in Doped<br />
and Nominally Undoped GaN. Phys. Rev. B59, 5561–5567 (1999).<br />
F. Rossi, and T. Kuhn: Theory of Ultrafast Phenomena in Photoexcited Semiconductors.<br />
Rev. Mod. Physics 74, 895–950 (2002).<br />
Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and<br />
C. T. Lee: Optical Properties of ZnO/GaN heterostructure and its nearultraviolet<br />
Light-Emitting Diodes. Appl. Phys. Lett. 83, 4713–4715 (2003).<br />
D. Pelka and K. Patel: An Overview of LED Applications for General Illumination.<br />
Proceed. of SPIE Conference on Design of Efficient Illumination<br />
Systems 5186, 15–26 (2003).<br />
J. Y. Tsao: Solid State Lighting: Lamps, Chips and Materials for Tomorrow.<br />
IEEE Circuits and Dvices Magazine, 20, 28–37 (2004).