10. Appendix

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756 Subject Index Atomically clean surface 248 Auger electron spectroscopy 9, 430 – schematic diagram 431 Auto-ionizing state – atomic spectra 291 Average gap 336 Average scattering time 206 B Baldereschi-Lipari Hamiltonian 175 – cubic term 179 Band bending 478 – at interfaces 223 – determination by UPS in Si 465 – effect on UPS core level spectra of Si 464 Band dispersion 68 Band dispersion near a degenerate extremum 71 Band index 21 Band nonparabolicity effect on plasma frequency 339 Band offsets 223, 473 Band structure – calculation by k · p method 68 – calculation by pseudopotential methods 58, 66, 98, 558 – calculation by tight-binding method 83 – determination by photoemission 445, 448 – – in Ge 457 – – in graphite 447 – GaAs 65 – Ge 65 – – showing optical transitions 268 – historical development 560 – nearly-free electrons in zincblende 48 – nearly-free electrons in diamond 52, 53 – Si 53 – valence bands in diamond- and zincblende-type semiconductors 71, 563 – ZnSe 65 Band-to-band emission lineshape 422 Band-to-band transitions in photoluminescence 351 Bandgap 1 Bandgap engineering 475 Bandgaps vs lattice constant 475 Bare exciton in CdS 284 Basis functions 33 Basis set 21 Bastard boundary condition 481 Biaxial crystals 246 Binding energies – of acceptors in Ge 314 – of an exciton to pairs of nitrogen atoms 197 – of core electrons 429 – of exciton to ionized donors and acceptors 368 Birefringence 246 BIS (Bremsstrahlung Isochromat Spectra) 428, 456 Bloch functions 20, 162, 279 Bloch oscillations 580, 581 Body-centered cubic lattice 23 Bohr magneton 536 Bohr radius – effective 176 – exciton 281, 282 Boltzmann constant 247 Boltzmann distribution 207 Boltzmann equation 206 Bond bending force 115 bond charge model 117 – adiabatic (ABCM) 119 Bond charges 118 Bond stretching force 116 Bonding orbital 83, 84 Bonding states 69 Bonds 84 Born approximation 217 Born effective charge 303 Born-Oppenheimer approximation 19, 107, 121 Born-von-Kármán boundary conditions 27 Born-von Kármán model 114 Bose-Einstein distribution function 126 Bosons 346 Bound electrons 203 Bound exciton 194, 362, 407 – emission spectra 366 – recombination spectra of CdS 366 – in GaAsP 197 Bound holes 203 Boundary condition 481 Bragg reflection 61 Bremsstrahlung isochromat spectra 429, 456 Bridgman Method 6 Brillouin frequency 399 Brillouin scattering 244, 345, 375, 398–400 – resonant 401 – selection rules 424 – spectra of Ge, Si, GaAs 401, 402 Brillouin tensor 405 Brillouin zone 21 – of the fcc lattice 96 de Broglic electron waves 579 Broken bonds 180 Brooks–Herring approach 217, 219–220 Bulk modulus 139 Burstein-Moss shift 348
C c(2 × 8)(111) surface of Ge – direct photoemission 459 – energy bands 459 c(8 × 2) reconstruction of (111) Ge surface 458 Callan charge 303 Carrier distribution function – degenerate 355 – drifted 237 Carrier lifetime 226 Carrier mobility nondegenerate electron gas 206 Carrier-carrier interactions 226 Carrier-phonon interactions 226 Cartesian tensors 174 Cascade model 414, 416 Cathodoluminescence 346 Cauchy principal value 184, 252 Causality 252 CCD (charge-coupled device) 250, 387 Cd 1-xMn xTe 1, 4 CdS 69, 143, 368 – A exciton dispersion 283 – phonons 117 – polariton emission 364 CdSe 69 CdTe 289 – effective charges 305 – Piezoreflectance 322 Center-of-mass (CM) motion of exciton 278, 323 Center-of mass coordinate 323 – of exciton 281 Central cell correction 170, 571 – acceptors 315 Central cell effects in excitons 289 Centrosymmetric crystals 48 Channeltron 387, 437 Character tables 34 – D 2d 548 – T d 37, 38 – O h 39, 40 – diamond structure, – – ° point 54 – – ¢ point 58 – – X point 57 – zincblende structure, – – ° point 73 – – § point 50 – – ¢ point 51 – – X point 52 Characteristic energy loss 428 Characters of representations 34 Charge density of the valence electrons 67 Charge distribution 118 Subject Index 757 – X-ray determination 118 Charge-coupled devices 250, 387 Charged harmonic oscillators dielectric function 335 Chemical potential 206 Chemical shifts 173 Chemical Vapor Deposition 6, 7 Chirality 342 Class in group theory 34 – in a double group 72 Classical equation of motion of free carriers 204 Cohesive energies 67 Collossal magneto-resistance (CMR) 4 Collector in resonant tunneling devices 524 Color Center Laser 386 Combination scattering 377 Compatibility relations 49, 98 Compensated semiconductors 356 Compensator 249, 250 Complex in group theory 28 Complex dielectric constant for lattice vibration 299 Complex reflectivity 252 Compliance tensor 128, 138 Compton scattering 428 Conduction band 70 Conduction band extrema 126 – along ¢ in Si 128 – in AlAs 480 Conductivity tensor 205 Confined acoustic phonons Raman scattering 516 Confined optic phonon modes 498, 500 – electron-phonon interactions – – deformation potential interaction 516 – – Fröhlich interaction 517 – – Huang-Zhu model 523 – in QW’s 494 – in SL’s 494 Confinement energy levels 471 Confinement of electrons in quantum wells 472 Confluent hypergeometric functions 286 Conjugate bonds 4 Constant energy surfaces – holes 80 – J = 3/2(° 8) bands in diamond- and zincblendetype semiconductors 81 Convolution theorem 245 Conwell-Weisskopf approach 217, 218 Copper halides p-d hybridization 451 Core electrons 18, 58 – d 429 – p 429 Core levels – binding energy 451
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Appendix A: Pioneers of Semiconduct
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Ultra-Pure Germanium 555 Ultra-Pure
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References Ultra-Pure Germanium 557
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Two Pseudopotential Methods: Empiri
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The Early Stages of Band-Structures
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Cyclotron Resonance and Structure o
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References Cyclotron Resonance and
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Optical Properties of Amorphous Sem
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Optical Spectroscopy of Shallow Imp
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Page 21 and 22:
Page 23 and 24:
On the Prehistory of Angular Resolv
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The Discovery and Very Basics of th
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The Birth of the Semiconductor Supe
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Number of papers 500 200 100 50 20
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Appendix B: Solutions to Some of th
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Solution to Problem 2.6 585 transfo
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⎧ ⎫ 2apple ⎪⎨ cos (y z)
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Partial solution to Problem 2.8 589
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Solution to Problem 2.16 Solution t
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Solution to Problem 2.20 597 to the
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Therefore the result of I ′ on
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Solution to Problem 3.2(c) Solution
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Solution to Problem 3.5 603 Similar
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Solution to Problem 3.7 (b and c) 6
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u3. The above equation can be reduc
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Solution to Problem 3.8 (a, c and d
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Solution to Problem 3.11(a,b and c)
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Solution to Problem 3.16 613 (1) Al
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Solution to Problem 3.17 Solution t
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Solution to Problem 3.17 617 forces
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Solution to Problem 4.1 619 the abo
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C dz ′ z ′ i° Solution to Pro
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R -R A y E’-E y E’-E R x Soluti
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Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
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Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
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A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
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Solution to Problem 8.9 661 of 19.5
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Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
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Chapter 2 693 and zinc-blende group
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Chapter 3 695 Inelastic x-ray Scatt
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Chapter 4 697 results from a better
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Chapter 5 699 K. Alberi, K. M. Yu,
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Chapter 5 701 P. Ramvall, N. Carlss
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Chapter 6 Ab initio calculations of
Page 153 and 154: Chapter 6 705 Strain-induced birefr
Page 155 and 156: Chapter 7 707 S. Baroni, S. de Giro
Page 157 and 158: Chapter 7 709 W. Windl, K. Karch, P
Page 159 and 160: Chapter 8 711 Strain Shift Coeffici
Page 161 and 162: Chapter 9 713 Z. J. Zhao, F. Liu, L
Page 163 and 164: Chapter 9 715 S. F. Ren, W. Cheng,
Page 165: Chapter 9 717 V. P. Gusynin, S. G.
Page 168 and 169: 720 References tions II. Misfitting
Page 170 and 171: 722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 192 and 193: 744 References 7.122 D. C. Reynolds
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 200 and 201: 752 References 9.68 J. P. Palmier:
Page 203: Subject Index A ·-Sn (gray tin) 95
Page 207 and 208: Dielectric function 117, 246, 253,
Page 209 and 210: Emission rate vs frequency in Ge 34
Page 211 and 212: Galena (PbS) 1 Gamma-ray detectors
Page 213 and 214: Insulators 1 Integral quantum Hall
Page 215 and 216: - - vs T 222 - temperature dependen
Page 217 and 218: - frequency 253, 306, 335 - - of va
Page 219 and 220: Resonant Raman profile 403 Resonant
Page 221 and 222: - - LA phonons 512 - - LO phonons 5
Page 223: - structure 142 - symmetry operatio
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10. Appendix

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