10. Appendix
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770 Subject Index<br />
Quantum wires 470<br />
Quasi-thermal equilibrium 225<br />
Quasiparticle approach 67<br />
R<br />
Radiative lifetime minority carrier 351<br />
Radiative recombination 194, 346<br />
– centers 349<br />
– time 351<br />
Raman<br />
– frequencies 350, 377<br />
– modes of acoustic phonons in Cu 2O 416<br />
– resonance at forbidden exciton in Cu 2O 408<br />
– shift 377<br />
– spectrometers 385<br />
Raman excitation spectroscopies 386<br />
Raman scattering 244, 345, 428<br />
– and Fröhlich interaction in superlattices 515<br />
– as a form of modulation spectroscopy 319<br />
– breakdown of q-conservation 413<br />
– by LA modes in GaAs/AlAs superlattice 514<br />
– confined optical phonons 516<br />
– interface modes 518<br />
– interference in scattering amplitudes 413<br />
– microscopic theory 394<br />
– odd parity phonon in Cu 2O 409, 424<br />
– polaritons 423<br />
– selection rules 423<br />
– – parity 379<br />
– – zincblende-type crystals 381<br />
– spontaneous 394<br />
– stimulated 385, 395<br />
– Stokes and Anti-Stokes scattering 377<br />
– three phonons in Cu 2O 417, 418<br />
– two phonons 377<br />
– via deformation potential 426<br />
– via Fröhlich interaction 426<br />
– zone-center phonons 377<br />
Raman spectra<br />
– (GaAs) 16(AlAs) 16 SL 519<br />
– Ge monolayers 392<br />
– interface mode in GaAs/AlAs 520<br />
– phonon-polaritons 392<br />
Raman spectroscopy<br />
– detector 387<br />
– light source 385<br />
– spectrometer 386<br />
Raman tensor 378<br />
– antisymmetric components 379<br />
– symmetry properties 383, 424<br />
– wurtzite crystal 423<br />
– zincblende crystal 380<br />
Raman-active transitions 47<br />
Random alloy 192<br />
Rayleigh scattering 375, 382<br />
Reciprocal lattice 23<br />
Recombination 226<br />
Reduced ionic mass 297<br />
Reduced mass of exciton 280<br />
Reduced zone scheme 21, 109<br />
Reflectance difference spectroscopy (RDS)<br />
332<br />
Reflectance 246<br />
– GaAs 256, 316<br />
– modulation 315<br />
– normal incidence 250<br />
– spectra 567<br />
Reflection coefficient 246<br />
Reflection High Energy Electron Diffraction<br />
(RHEED) 9, 10, 11<br />
Reflection of light by lattice vibrations 298<br />
– spectra of InAs, GaAs, InSb, GaSb, AlSb, InP<br />
300<br />
Reflection symmetry 20<br />
Reflectivity<br />
– complex 249<br />
– Reststrahlen region 299<br />
– spectra 66<br />
Reflectometer 251<br />
Refractive index 246<br />
Relaxation time 208<br />
– approximation 206, 238<br />
– momentun 209<br />
Renormalization of bandgap at T = 0 341<br />
Representations 33<br />
– characters 34<br />
– compatibility 49<br />
– dimension 34<br />
– equivalent 34, 36<br />
– identity 36<br />
– irreducible 34<br />
– reducible 34<br />
Resolvent operator 183<br />
Resolving power of Raman spectrometers 386<br />
Resonance Brillouin scattering 375, 403, 419<br />
– in GaAs 421<br />
Resonance Raman scattering 375, 399, 403<br />
– allowed and forbidden 412<br />
– at band continua 404<br />
– at bound exciton 407<br />
– at free excitons 406<br />
– confined and IF modes in GaAs/AlAs MQW’s<br />
510<br />
– in CdS 407, 412<br />
– in GaP 405<br />
– multiphonon 410