10. Appendix
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704 <strong>Appendix</strong> D<br />
nection with Fig. 6.44. The effects of the zero –point vibrations (i.e. at T 0)<br />
can be found for many semiconductors in TABLE III of the article by Thewalt<br />
and Cardona mentioned in the additional references of Chap. 2.<br />
Note that with increasing temperature energy gaps usually (but not always:<br />
see PbS) decrease. Some additional references were already given for Chap. 2.<br />
We add a few more:<br />
R. Ramírez, C. P. Herrero: Path Integral Molecular Dynamics Simulation of<br />
Diamond. Phys. Rev. B73, 245202/1–8 (2006).<br />
H. J. Liang, A. Yang, M. L. W. Thewalt, R. Lauck and M. Cardona: Effect<br />
of Sulfur Isotopic Composition on the Band Gap of PbS. Phys. Rev. B73,<br />
233202/1–4 (2006).<br />
S. Tsoi, H. Alawadhi, X. Lu, J. W. Ager III, C. Y. Liao, H. Riemann, E. E.<br />
Haller, S. Rodríguez and A. K. Ramdas: Electron-Phonon Renormalization<br />
of the Electronic Band Gap of Semiconductors: Isotopically Enriched Silicon:<br />
Phys. Rev. B70, 193201/1–4 (2004); erratum: Phys. Rev. B72, 249905<br />
(2005).<br />
M. Cardona, T. A. Meyer, and M. L. W. Thewalt: Temperature Dependence of<br />
the Energy Gap of Semiconductors in the Low-Temperature Limit. Phys.<br />
Rev. Letters 92, 196403–196406 (2004).<br />
D. Olguín, M. Cardona and A. Cantarero: Electron-Phonon Effects on the<br />
Direct Band Gap of Semiconductors: LCAO calculation. Sol. State Comm.<br />
122, 575–589 (2002)<br />
Optical Properties of Semiconductor Mixed Crystals<br />
Mixed Crystals or alloys have been mentioned in connection with Fig. 4.8.<br />
Their energy gaps vary usually continuously from one end to the other of the<br />
composition range. They are used by technologists for bandgap engineering<br />
(see Fig. 9.2). The literature in the field has an old and distinguished history<br />
(see Chap. 9). Recent work involves ab initio calculations of the so-called<br />
“bowing” in the dependence of bandgaps on composition. A few recent references<br />
are:<br />
C. Mitra and W. R. L. Lambrecht: Band-Gap Bowing in AgGa(Se1xTex)2 and<br />
its effect on second–order response coefficients and refractive indices. Phys.<br />
Rev. B76, 205206/1–5 (2007).<br />
V. R. D’Costa, C. S. Cook, J. Menéndez, J. Tolle, J. Kouvetakis and S. Zollner:<br />
Transferability of bowing optical parameters between binary and ternary<br />
group-IV alloys. Solid State Commun. 138, 309 (2006)<br />
Z. H. Sun, W. S. Yan, H. Oyanagi, Z. Y. Pan, S. H. Wei: Local Lattice Distortion<br />
of Ge-Dilute Ge-Si alloy: Multiple-Scattering EXAFS Study. Phys. Rev.<br />
B74, 092101/1–4 (2006).