10. Appendix

712 Appendix D
J. Ristein, F. Maier, M. Riedel, J. B. Cui, L. Ley: Surface Electronic Properties
of Diamond. Phys. Stat. Solidi A 181, 65–76 (2000).
B. Voigtländer: Fundamental Processes in Si/Si and Ge/Si Epitaxy Studied by
Scanning Tunneling Microscopy during Growth. Surf. Sci. Reports 43, 127–
254 (2001).
I. Mahboob, T. D. Veal, L. F. J. Piper, C. F. McConville, H. Lu, W. J. Schaff, J.
Furthmüller, F. Bechstedt: Origin of Electron Accumulation at wurtzite InN
surfaces. Phys. Rev. B69, 201307/1–4 (2004).
I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff: Intrinsic
Electron Accumulation at Clean InN Surfaces. Phys. Rev. Lett. 92, 036804/1–
4 (2004).
P. Rinke, A. Qteish, J. Neugebauer, C. Freysoldt, M. Scheffler: Combining
GW Calculations with Exact-Exchange Density-Functional Theory: an Analysis
of Valence Band Photoemission for Compound Semiconductors. New J.
Phys. 7, 126/1–35 (2005).
J. N. Crain, F. J. Himpsel: Low Dimensional Electronic States at Silicon Surfaces.
Appl. Phys. A: Mat. Science and Processing 82, 431–438 (2006).
L. Weinhardt, O. Fuchs, E. Umbach, C. Heske, A. Fleszar, W. Hanke, J. D.
Denlinger: Resonant Inelastic Soft x-Ray Scattering, x-Ray Absorprion
Spectroscopy and Density Functional theory Calculations of the Electronic
Bulk Band Structure of CdS. Phys. Rev. B75, 165207/1–8 (2007).
A. R. H. Preston, B. J. Ruck, L. F. J. Piper, A. DeMasi, K. E. Smith, A. Schleife,
F. Fuchs, F. Bechstedt, J. Chai, S. M. Durbin: Band Structure of ZnO from
Resonant x-Ray Emission Spectroscopy. Phys. Rev. B78, 155114/1–4 (2008).
Core Levels and Core Level Shifts
Electron emission from core levels is usually excited with far uv or x-ray radiation.
Although investigations are sometimes still performed with conventional
sources, most work is done now with monochromatized synchrotron radiation.
Strong monochromaticity allows the determination of the natural line widths
(not broadened by spectral resolution). Sometimes these widths are so narrow
that the resolution of the contributions of the first few surface layers becomes
possible (especially at low temperatures). Ab initio calculations of core level
energies and shifts are also being performed. A few recent references follow:
H. W. Yeom, Y. C. Chao, S. Terada, S. Hara, S. Yoshida, R. I. G. Uhrberg: Surface
Core Levels of the 3C SiC(001)3×2 Surface: Atomic Origins and Surface
Reconstruction. Phys Rev. B56, R15525–R15528 (1997).
R. I. G. Uhrberg, T. Kaurila, Y. C. Chao: Low-Temperature Photoemission
Study of the Surface Electronic Structure of Si(111)7×7. Phys. Rev. 58,
R1730–R1733 (1998).
P. De Padova, R. Larciprete, C. Quaresima, C. Ottaviani, B. Ressel, P. Perfetti:
Identification of Si 2p Surface Core Level Shifts on the Sb/Si(001)-(2×1)
interface. Phys. Rev. Letters 81, 2320–2323 (1998).