10. Appendix
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Chapter 9 713<br />
Z. J. Zhao, F. Liu, L. M. Qiu, L. Z. Zhao, S. K. Yan: Core Level Binding Energy<br />
Shifts Caused by Size Effect in Nanoparticles. Acta Physico-Chimica Sinica<br />
24, 1685–1688 (2008).<br />
Graphite and Graphene<br />
Recently it has been shown that by sticking adhesive tape on a graphite surface,it<br />
is possible to peel off isolated single hexagonal layers of carbon, the socalled<br />
graphene sheets. These are ideal two-dimensional samples. Their symmetry<br />
(with two atoms per two-dimensional primitive cell), demands degeneracy<br />
at the Fermi energy at the K-points of the two-dimensional Brillouin<br />
zone. The perfect single graphene layer can be called a semi-metal or a zerogap<br />
semiconductor. This fact has received considerable attention in the past<br />
5 years. A k · p expansion of the valence and conduction bands around this<br />
point results in Dirac-like particles of zero effective mass (see Problem 2.19).<br />
The interested reader should consult the following references in addition to<br />
those in Chapt. 1&9:<br />
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V.<br />
Grigorieva, S. V. Dubonos, A. A. Firsov: Two-Dimensional Gas of Massless<br />
Dirac Fermions in Graphene. Nature 438, 197–200 (2005).<br />
A. K. Geim and K. S. Novoselov: The Rise of Graphene. Nature Materials. 6,<br />
183–191 (2007).<br />
Chapter 9<br />
This chapter deals with the effect of confinement of electrons and phonons in<br />
semiconductors. At the time of first publication of this book the best way of<br />
demonstrating these confinement effects was to fabricate a nanometer thick<br />
layer of semiconductor, making a so called quantum well. Since then the<br />
field of creating nanometer scale semiconductor structures has “exploded”<br />
concomitantly with world-wide interest in nano-science and -technology. New<br />
terms like nanowires, quantum wires and quantum dots have appeared. We<br />
have tried to cover some of these new developments in subsequent editions. In<br />
the present edition we try to add new references to recent work in the area of<br />
nanostructured semiconductors relevant to the topics covered in various chapters.<br />
Due to the large number of publications which have appeared we find it<br />
necessary to limit ourselves to only a small number of selected papers.<br />
Confinement of electrons and holes in Quantum Wires and Quantum Dots<br />
Al. L. Efros, A. L. Efros: Interband absorption of light in a semiconductor<br />
sphere. Sov. Phys. Semicond. 16, 772–776 (1982).<br />
K. I. Kang, B. P. McGinnis, Sandalphon, Y. Z. Hu, S. W. Koch, N. Peyghambarian,<br />
A. Mysyrowicz, L. C. Liu, S. H. Risbud: Confinement-induced valenceband<br />
mixing in CdS quantum dots observed by two-photon spectroscopy.<br />
Phys. Rev. B45, 3465–3468 (1992).