27.04.2013 Views

10. Appendix

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

Chapter 1 689<br />

ing up the glass to allow the ions to react to form the semiconductor nanocrystals.<br />

L. C. Liu and S. H. Risbud: Quantum-dot size-distribution analysis and precipitation<br />

stages in semiconductor doped glasses. J. Appl. Phys. 68, 28–32 (1990).<br />

S. A. Gurevich, A. I. Ekimov, I. A. Kudryavtsev, O. G. Lyublinskaya, A. V.<br />

Osinskii, A. S. Usikov, N. N. Faleev: Growth of CdS nanocrystals in silicate<br />

glasses and in thin SiO2 films in the initial stages of the phase separation of<br />

a solid solution. Semiconductors, 28, 486–93 (1994).<br />

S. Guha, M. Wall and L. L. Chase: Growth and Characterization of Ge<br />

nanocrystals. Nuclear Instru. Meth. in Phys. Research B (Beam Interactions<br />

with Materials and Atoms) 147, 367–372 (1999).<br />

H. Bernas and R. E. de Lamaestre: Ion beam-induced quantum dot synthesis<br />

in glass. Nuclear Instru. Meth. in Phys. Research B (Beam Interactions with<br />

Materials and Atoms) 257, 1–5 (2007).<br />

Pulsed Laser Deposition<br />

This technique is similar to evaporation except it uses a uv laser producing<br />

high power nanosecond long pulses to ablate a source into a plume. The short<br />

duration of the pulse will not dissociate the semiconductor unlike evaporation<br />

by an oven. Contamination by the crucible is avoided since only the source is<br />

heated. By depositing nanometer metal catalyst particles on the substrate it is<br />

possible to grow an array of nanowires just as the LVS technique.<br />

N. Wang, Y. F. Zhang, Y. H. Tang, C. S. Lee and S. T. Lee: SiO2-enhanced synthesis<br />

of Si nanowires by laser ablation. Appl. Phys. Lett. 73, 3902–4 (1998).<br />

Y. Y. Wu, Rong Fan and P. D. Yang: Block-by-block growth of single-crystalline<br />

Si/SiGe superlattice nanowires. Nano Letters, 2, 83-6 (2002).<br />

S. Neretina, R. A. Hughes, N. V. Sochinski, M. Weber, K. G. Lynn, J. Wojcik,<br />

G. N. Pearson, J. S. Preston, and P. Mascher: Growth of CdTe/Si(100) thin<br />

films by pulsed laser deposition for photonic applications. J. Vac. Sci. Technol.<br />

A24, 606–611 (2006).<br />

C. V. Cojocaru, A. Bernardi, J. S. Reparaz, M. I. Alonso, J. M. MacLeod, C.<br />

Harnagea, and F. Rosei: Site-controlled growth of Ge nanostructures on<br />

Si(100) via pulsed laser deposition nanostenciling. Appl. Phys. Lett. 91,<br />

113112–113114 (2007).<br />

A. Rahm, M. Lokenz, T. Nobis, G. Zimmirmann, M. Grundmann, B. Fuhrmann<br />

and F. Syrowatka: Pulsed-laser deposition and characterization of<br />

ZnO nanowires with regular lateral arrangement. Applied Physics A88,<br />

31–4 (2007).<br />

X. W. Zhao, A. J. Hauser, T. R. Lemberger and F. Y. Yang. Growth control of<br />

GaAs nanowires using pulsed laser deposition with arsenic over-pressure.<br />

Nanotechnology, 18, 485608-1-6 (2007).

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!