10. Appendix
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
Chapter 1 689<br />
ing up the glass to allow the ions to react to form the semiconductor nanocrystals.<br />
L. C. Liu and S. H. Risbud: Quantum-dot size-distribution analysis and precipitation<br />
stages in semiconductor doped glasses. J. Appl. Phys. 68, 28–32 (1990).<br />
S. A. Gurevich, A. I. Ekimov, I. A. Kudryavtsev, O. G. Lyublinskaya, A. V.<br />
Osinskii, A. S. Usikov, N. N. Faleev: Growth of CdS nanocrystals in silicate<br />
glasses and in thin SiO2 films in the initial stages of the phase separation of<br />
a solid solution. Semiconductors, 28, 486–93 (1994).<br />
S. Guha, M. Wall and L. L. Chase: Growth and Characterization of Ge<br />
nanocrystals. Nuclear Instru. Meth. in Phys. Research B (Beam Interactions<br />
with Materials and Atoms) 147, 367–372 (1999).<br />
H. Bernas and R. E. de Lamaestre: Ion beam-induced quantum dot synthesis<br />
in glass. Nuclear Instru. Meth. in Phys. Research B (Beam Interactions with<br />
Materials and Atoms) 257, 1–5 (2007).<br />
Pulsed Laser Deposition<br />
This technique is similar to evaporation except it uses a uv laser producing<br />
high power nanosecond long pulses to ablate a source into a plume. The short<br />
duration of the pulse will not dissociate the semiconductor unlike evaporation<br />
by an oven. Contamination by the crucible is avoided since only the source is<br />
heated. By depositing nanometer metal catalyst particles on the substrate it is<br />
possible to grow an array of nanowires just as the LVS technique.<br />
N. Wang, Y. F. Zhang, Y. H. Tang, C. S. Lee and S. T. Lee: SiO2-enhanced synthesis<br />
of Si nanowires by laser ablation. Appl. Phys. Lett. 73, 3902–4 (1998).<br />
Y. Y. Wu, Rong Fan and P. D. Yang: Block-by-block growth of single-crystalline<br />
Si/SiGe superlattice nanowires. Nano Letters, 2, 83-6 (2002).<br />
S. Neretina, R. A. Hughes, N. V. Sochinski, M. Weber, K. G. Lynn, J. Wojcik,<br />
G. N. Pearson, J. S. Preston, and P. Mascher: Growth of CdTe/Si(100) thin<br />
films by pulsed laser deposition for photonic applications. J. Vac. Sci. Technol.<br />
A24, 606–611 (2006).<br />
C. V. Cojocaru, A. Bernardi, J. S. Reparaz, M. I. Alonso, J. M. MacLeod, C.<br />
Harnagea, and F. Rosei: Site-controlled growth of Ge nanostructures on<br />
Si(100) via pulsed laser deposition nanostenciling. Appl. Phys. Lett. 91,<br />
113112–113114 (2007).<br />
A. Rahm, M. Lokenz, T. Nobis, G. Zimmirmann, M. Grundmann, B. Fuhrmann<br />
and F. Syrowatka: Pulsed-laser deposition and characterization of<br />
ZnO nanowires with regular lateral arrangement. Applied Physics A88,<br />
31–4 (2007).<br />
X. W. Zhao, A. J. Hauser, T. R. Lemberger and F. Y. Yang. Growth control of<br />
GaAs nanowires using pulsed laser deposition with arsenic over-pressure.<br />
Nanotechnology, 18, 485608-1-6 (2007).