10. Appendix
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References 1<br />
Chapter 1<br />
1.1 J. I. Pankove, T. D. Moustakas (eds.): Gallium Nitride I, Semiconductors and<br />
Semimetals, Vol. 50 (Academic Press, San Diego 1998)<br />
S. Nakamura, G. Fasol: The Blue Laser Diode. GaN Based Light Emitters and<br />
Lasers (Springer, Berlin, Heidelberg 1997)<br />
1.2 L. Gao, Y. Y. Xue, F. Chen, Q. Xiong, R. L. Meng, D. Ramirez, C. W. Chu, J. H.<br />
Eggert, H. K. Mao: Superconductuvity up to 164 in HgBa2Ca m1CumO 2m2‰<br />
(m 1, 2, 3), under pressure. Phys. Rev. B50, 4260–4263 (1994)<br />
1.3 R. Saito, G. Dresselhaus and M. S. Dresselhaus: Physical Properties of Carbon<br />
Nanotubes (Imperial College Press, London 1998)<br />
1.4 J. Shinan, Z. Vardeny and Z. Kapati (ed.): Optical and Electronic Properties of<br />
Fullerenes and Fullerene-Band Materials (Marcel Dekker, New York, 1999)<br />
1.5 C. N. R. Rao and B. Raveau (ed.): Colossal Magnetoresistance, Charge Ordering<br />
and Related Properties of Manganese Oxides (World Scientific, Singapore,<br />
1998)<br />
1.6 T. Ruf, R. W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H.-J. Pohl, G. G.<br />
Devyatych, P.G. Sennikov: Thermal conductivity of isotopically enriched silicon.<br />
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1.7 J. Czochralski: A new method for measuring the crystallization velocity of metals<br />
(in German). Z. Phys. Chem. 92, 219–221 (1918)<br />
1.8 O. Madelung, M. Schulz, H. Weiss (eds.): Landolt-Börnstein, Series III, Vol. 17c<br />
(Semiconductors) (Springer, Berlin, Heidelberg 1984) p. 29. This series contains<br />
comprehensive references on the growth techniques and properties of individual<br />
semiconductors up to 1984<br />
1.9 W. C. Dash: Growth of silicon crystals free of dislocations. J. Appl. Phys. 30,<br />
459 (1959)<br />
1.10 C. T. Foxon, B. A. Joyce: Growth of thin films and heterostructures of III–V compounds<br />
by molecular beam epitaxy, in Growth and Characterization of Semiconductors<br />
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1.11 S. Nakamura and G. Fasol: The Blue Laser Diode: GaN Based Light Emitters<br />
and Lasers (Springer-Verlag, Berlin, 1997) p. 36–37<br />
1.12 I. N. Stranski and L. Krastanow: Sitzungsberichte d. Akad. d. Wissenschaften<br />
in Wien, Abt. 11B, Band 146, 797 (1937)<br />
1.13 D. W. Pashley: The Basics of Epitaxy, in Growth and Characterization of Semiconductors<br />
ed. by R. A. Stradling, P. C. Klipstein (Hilger, Bristol 1990) p. 1<br />
1.14 F. C. Frank and J. H. van der Merwe: One-dimensional dislocations I. Static<br />
theory, Proc. Royal Society A198, 205–216 (1949); One-dimensional disloca-<br />
1 In case several references are listed under one number, it is tacitly assumed that the<br />
first reference is a, the second one b, etc. The reference numbers highlighted in red correspond<br />
to proceedings of International Conferences on the Physics of Semiconductors<br />
(ICPS). See Preface to the Second Edition.