10. Appendix
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772 Subject Index<br />
– – Czochralski 5<br />
– internal strain parameter ˙ 150, 155<br />
– intervalley scattering 215<br />
– – g- and f-processes 215–216<br />
– lattice absorption 301<br />
– Luttinger parameters 175<br />
– mobility in n-type samples 221–222<br />
– MOSFET 538<br />
– Penn gap 337<br />
– phonon dispersion 111<br />
– photoconductive response 571<br />
– photocurrent yield from clean and contaminated<br />
(111) surfaces 434<br />
– photothermal ionization spectrum (PTIS)<br />
of P donors 313<br />
– porous Si 351<br />
– pseudopotential form factors 61, 63<br />
– QHE 539, 576<br />
– radiative lifetime 352<br />
– Raman spectra 389, 390<br />
– reflectance 254<br />
– – energies of prominent structures 268<br />
– reflectance difference spectra 332<br />
– spin-orbit splitting 75, 267<br />
– scattering rate of conduction electrons 213<br />
– stiffness constants 141<br />
– tight-binding parameters 91<br />
– UPS from near-intrinsic and heavily doped<br />
sample 464<br />
– valence band parameters 75<br />
– valence band structure and density of states 92<br />
– valence charge distribution 108<br />
– XPS spectrum 442<br />
– zone edge phonon energies 303<br />
Silent phonon modes 138<br />
Similarity transformations 34<br />
Slater-Koster interaction 194<br />
SnS 3, 445<br />
SnSe 445<br />
Solar cells 566<br />
– based on amorphous and crystalline Si 567<br />
– based on polycrystalline Si 568<br />
Space charge layers 460<br />
Space charge penetration in band bending 463<br />
Space groups 28<br />
Spatial dispersion 245, 337<br />
Spectral resolving power 386<br />
Spectroscopic ellipsometry 250<br />
Spherical approximation in calculating acceptor<br />
level energies 177<br />
Spherical harmonics 73, 175, 280<br />
Spherical tensors 174<br />
Spin 71, 166<br />
Spin dynamics of electrons 520<br />
Spin-orbit coupling 64, 71, 266, 564, 571<br />
– in atomic physics 71<br />
Spin-orbit interaction 71, 147<br />
Spin-orbit split-off hole band<br />
– effective mass 75<br />
– IR absorption 564<br />
Spin-orbit splitting 74<br />
– along (111) direction ¢ 1 267<br />
– atomic 74<br />
– at zone center ¢ 0 267<br />
Spin-polarized photoelectron spectra in GaAs<br />
435<br />
Spontaneous emission 346, 422<br />
Square well 473<br />
SrTiO 3 1<br />
Stacking of atomic layers in zincblende- and<br />
wurtzite-type crystals 142<br />
Stark ladders 580, 581<br />
Static effective charge 304<br />
Sticking coefficient at surfaces 465<br />
Stiffness constants of diamond- and zincblendetype<br />
semiconductors 141<br />
Stiffness tensor 140<br />
Stimulated emission 258, 260, 346, 422<br />
Stimulated Raman scattering 385<br />
Stokes Raman scattering 377, 384<br />
Strain 7<br />
Strain tensor 123<br />
– irreducible components 123<br />
– volume dilation 124<br />
Stranski-Krastanow growth 11<br />
Stray light rejection of Raman spectrometers 386<br />
Stress 138<br />
Stress tensor 128, 138<br />
Structure factor 61<br />
Subbands 483<br />
Subgroups 28<br />
Substitutional defects 160<br />
Sulfur 2<br />
Sum rules 335<br />
Superconductors 1, 3<br />
Supperlattices (SL’s) 5, 469, 578<br />
– birth 578<br />
– Bloch oscillations 581<br />
– electrons and holes 487–489<br />
– – tight-binding (LCAO) calculation 490<br />
– minibands 488<br />
– negative differential resistance 580<br />
– phonons 494–511<br />
– – in polar SL’s 502<br />
– – interface modes 502–511<br />
– – Si-Ge 496–498, 501<br />
– Raman spectra 511<br />
– – interface modes 518