10. Appendix

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762 Subject Index Franz-Keldysh effect 322, 325 – low field 327 Free carrier absorption – energy and wave vector conservations 307 – in doped semiconductors 306 – in n-type InAs 308 – interband 309 Free carriers 203 Free exciton emission 363 Free-to-bound transitions luminescene 354 Frenkel defect pair 160 Frenkel excitons 276 Frequency modulated reflectance 319 – spectra in GaAs 316 Frequency modulation 377 Fresnel equations 248 Fröhlich electron-phonon interaction 132–134, 214 Fröhlich interaction 132, 134 Frozen phonon approximation 117 Full rotation group 175, 198 Full zone k · p method 267 Fundamental absorption edge 265 G g-factors 538, 549, 550 Ga 0.47In 0.53As-Al 0.42In 0.52As quantum well 481 GaAlAs alloys 170 GaAs 363 – acceptor level energies 178 – band structure 65 – band energies at X point 98 – Brillouin spectrum 402 – conduction band effective mass 70 – core level absorption spectrum 429 – deformation potential for valence bands 126 – dielectric function 248, 256, 265, 328 – – derivatives 328 – donor binding energy 169 – drift velocity 226 – – velocity overshoot 226 – – velocity saturation 226 – effective charges 305 – electromechanical tensor component 132 – electron-phonon interactions 135 – electroreflectance 326 – exciton – – absorption spectra 287 – – binding energy and Bohr radius 282 – – emission 364 – – polariton dispersion 421 – free electron to bound hole luminescence 355 – growth – – chemical vapor deposition 7 – – liquid phase epitaxy 13 – – molecular beam epitaxy 9 – Gunn effect 230 – heterojunction 223 – infrared absorption in p-type samples 309 – intervalley deformation potentials 136 – lattice reflection spectrum 300 – Luttinger parameters 82, 175, 484 – mobility – – in n-type samples 222 – – in 2D electron gas 224 – nitrogen impurities 195 – optical phonon (zone center) energies and damping 300 – Penn gap 337 – phonon dispersion 111, 495 – photocathode 387 – photoluminescence 362 – – at 29.4 Kbar 353 – photoreflectance 331 – quantum wells 478 – – confined LO phonons 522 – – confined TO phonons 511 – – folded acoustic phonon 511 – – folded LA phonon 514 – – hole subband dispersion 492 – – homogeneous and inhomogeneous broadening 514 – – interface modes 505, 509 – – intersubband scattering rates 523 – – negative resistance 580 – – photoluminescence excitation spectra 369 – – Raman spectrum 514–516 – – resonant tunneling 525, 529 – – TEM picture 474 – radiative lifetime 352 – Raman spectra 388 – reflectance 256, 316 – – energies of prominent structures 268 – – frequency modulated 316 – relaxation time of electrons 213 – resonant Brillouin scattering 420 – scattering rate of conduction electrons 213 – spin-orbit splitting 267 – stiffness constants 140 – thermoreflectance 320 – transmission spectra 491 – valence band parameters 75 – XPS spectrum 442 GaAsP alloys – deep centers with A 1 symmetry 193 – N impurities 193
Galena (PbS) 1 Gamma-ray detectors 556 Gap problem 61, 64, 457 Gallium phosphide (GaP) – absorption edge 275 – effective charges 305 – nitrogen 192 – optical phonon frequencies 300 – phonon-polariton 393 – type I and II donor-acceptor pair (DAP) recombination spectra 359, 368 Gas discharge lamps – photoemission sources 452 Gas phase epitaxy 7 GaSb spin-orbit splitting 74 GaSe 3 – two dimensional excitons 291 Gauge – Coulomb 255 – invariance 255 – Landau 534 Ge – (111)-c(2 × 8) surface – – band structure 460 – – dangling bond surface bands 461 – – imaged by scanning tunneling microscope 459 – absorption coefficients 274 – absorption from core levels 429 – acceptor energy levels 178, 180, 181 – – binding energies of B,Al,Ga,In,Tl 314 – bandgap, temperature dependence 320 – band structure 58, 268 – Brillouin spectrum 402 – conduction band – – dispersion determined by inverse photoemission 457 – – effective mass 69 – cyclotron resonance 563 – density of valence states 441 – deformation potentials 125 – dielectric function 253 – – energies of prominent structures 268 – – imaginary part 265 – electronic band structure 64 – – comparison between tight-binding method, pseudopotential method and nearly-free electron model 93 – emission rate 347 – internal strain parameter ˙ 150 – isotopically pure 555 – Luttinger parameters 175 – minority carrier radiative lifetime 352 – Penn gap 338 – photomodulated reflectivity 331 – photothermal ionization spectrum 314 – pseudopotential from factors 61 – Raman spectra – – monolayers 391–392 – – two-phonon 390 – reflectance 255 – Seraphin coefficients 317 – spin-orbit splitting 267 – stiffness constants 141 – tight-binding interaction parameters 91 – ultra-pure 555 – UPS spectrum 441 – valence band 441 – – dispersion determined by angle-resolved UPS 449, 457 – – parameters 75 – XPS spectrum 450 Ge-Si alloys – interband critical points vs concentration 330 – Raman spectrum 391 Ge nSi m superlattices 498 GeS, GeSe 445 GeTe 1 Glass 2, 566 Glassy semiconductors 2, 5 Glide planes 28, 29 – diamond structure 52 Gray tin 2 – phonon dispersion relation 120 Green’s function, real part 190 Green’s function method 188 Group 25 Group of the wavevector k 42 Group theory 17, 25 Guiding center of cyclotron orbits 537, 542 Gunn effect 127, 225 Gunn oscillators 225, 240 H Subject Index 763 H – 368 Hall coefficient 232, 539, 543 – electrons 240 – holes 240 – thin film 236 Hall effect – classical 232, 234 – for a distribution of electron energies 237 – quantum 539, 576 Hall factor 237 – limit of strong and weak magnetic fields 240 Hall measurements 235
Page 1 and 2:
Appendix A: Pioneers of Semiconduct
Page 3 and 4:
Ultra-Pure Germanium 555 Ultra-Pure
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References Ultra-Pure Germanium 557
Page 7 and 8:
Two Pseudopotential Methods: Empiri
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The Early Stages of Band-Structures
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Cyclotron Resonance and Structure o
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References Cyclotron Resonance and
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Optical Properties of Amorphous Sem
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Optical Spectroscopy of Shallow Imp
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Page 21 and 22:
Page 23 and 24:
On the Prehistory of Angular Resolv
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The Discovery and Very Basics of th
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The Birth of the Semiconductor Supe
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Number of papers 500 200 100 50 20
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Appendix B: Solutions to Some of th
Page 33 and 34:
Solution to Problem 2.6 585 transfo
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⎧ ⎫ 2apple ⎪⎨ cos (y z)
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Partial solution to Problem 2.8 589
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Solution to Problem 2.16 Solution t
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Solution to Problem 2.20 597 to the
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Therefore the result of I ′ on
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Solution to Problem 3.2(c) Solution
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Solution to Problem 3.5 603 Similar
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Solution to Problem 3.7 (b and c) 6
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u3. The above equation can be reduc
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Solution to Problem 3.8 (a, c and d
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Solution to Problem 3.11(a,b and c)
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Solution to Problem 3.16 613 (1) Al
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Solution to Problem 3.17 Solution t
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Solution to Problem 3.17 617 forces
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Solution to Problem 4.1 619 the abo
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C dz ′ z ′ i° Solution to Pro
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R -R A y E’-E y E’-E R x Soluti
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Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
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Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
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A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
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Solution to Problem 8.9 661 of 19.5
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Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
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Chapter 2 693 and zinc-blende group
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Chapter 3 695 Inelastic x-ray Scatt
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Chapter 4 697 results from a better
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Chapter 5 699 K. Alberi, K. M. Yu,
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Chapter 5 701 P. Ramvall, N. Carlss
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Chapter 6 Ab initio calculations of
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Chapter 6 705 Strain-induced birefr
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Chapter 7 707 S. Baroni, S. de Giro
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Chapter 7 709 W. Windl, K. Karch, P
Page 159 and 160: Chapter 8 711 Strain Shift Coeffici
Page 161 and 162: Chapter 9 713 Z. J. Zhao, F. Liu, L
Page 163 and 164: Chapter 9 715 S. F. Ren, W. Cheng,
Page 165: Chapter 9 717 V. P. Gusynin, S. G.
Page 168 and 169: 720 References tions II. Misfitting
Page 170 and 171: 722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 192 and 193: 744 References 7.122 D. C. Reynolds
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 200 and 201: 752 References 9.68 J. P. Palmier:
Page 203 and 204: Subject Index A ·-Sn (gray tin) 95
Page 205 and 206: C c(2 × 8)(111) surface of Ge - di
Page 207 and 208: Dielectric function 117, 246, 253,
Page 209: Emission rate vs frequency in Ge 34
Page 213 and 214: Insulators 1 Integral quantum Hall
Page 215 and 216: - - vs T 222 - temperature dependen
Page 217 and 218: - frequency 253, 306, 335 - - of va
Page 219 and 220: Resonant Raman profile 403 Resonant
Page 221 and 222: - - LA phonons 512 - - LO phonons 5
Page 223: - structure 142 - symmetry operatio
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