10. Appendix

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764 Subject Index Hall mobility 237 Hall plateaus – explanation 541 Hamiltonian – Baldereschi-Lipari 175 – for an electron in a magnetic field 534 – for nuclear motions 107 – Herring and Vogt 129 – Luttinger 82 – piezoelectric electron-phonon 130 – Pikus-Bir 127, 147 Harmonic approximation 108 Harmonic oscillators 293 – dielectric function 261 – response to radiation 293 He-Ne laser 385 Heavily doped sc 354 Heavy hole 80, 490 Heavy hole mass 75 Hemispherical analyzer 435 Hertz 247 Hetero-epitaxy 7 Heterojunction 223, 476 – modulation-doped 223 Heteropolar molecule 85 HgBaCa 2Cu 3O 8 3 HgSe 95 HeTe 2, 95 High field transport 225 High frequency oscillators 230 High T c superconductors 3 Hilbert transform 185 Hole 3 – band 80 – definition 80 – droplets in QHE 542 – subband in GaAs/GaAlAs QW’s 484, 485 Holographic gratings 250 Homo-epitaxy 7 Homogeneous broadening 515 Homogeneous linewidth 372 Homomorphism 30, 33 Homojunction 475 Homopolar molecule 84 Hot carrier 225 Hot electrons 203, 225 – transport 215 Hot luminescence 349, 415 Hubbard model 182 Hybridized sp 3 orbitals 59 Hydrogen atom 280 – electronic states 166 – elliptically-deformed 171 Hydrogen molecule binding energy 366 Hydrogenic impurity center 570 Hydrostatic pressure 138 Hyperbolic excitons 288–291 I Identity operation 25, 26 Identity representation 36 Image-intensifier 250, 387 Imaging photomultiplier tubes 387 Impact ionization 230 Impact parameter 218 Improper rotations 26 Impurities – hydrogenic 161 – shallow 161 – deep 181 Impurity band 354 Impurity core 170 Impurity ionization energies, Ge, Si 564 Incoming and outgoing Raman resonance 403 – GaSe 407 Indirect absorption edge 269 – GaP 276 – Ge 275, 349 – Si 275 Indirect bandgap semiconductors 135, 136, 194, 215 Indirect excitons 287 Indirect gap in Si 271 Indirect transitions 265 – dependence on ˆ 273 – Feynman diagrams 424 – model 449 – phonon absorption and emission 273 – phonon-assisted 567 Inelastic neutron scattering 110 Inelastic scattering 345 – of light 375 Infrared absorption spectra – p-type GaAs 309 – shallow impurities 311 Infrared detectors 569 Infrared-active transitions 47 Inhomogeneous broadening 512, 513 Inhomogeneous linewidth 372 Initial state interaction 356 InP Raman spectra 389 InS, InSe 445 InSb – fundamental absorption edge 270 – spin-orbit splitting 75
Insulators 1 Integral quantum Hall effect 541, 551 Interband scattering – f-processes 216 – g-process 216 inter-valence-band excitations – spin-orbit splitting 310 Intercalation 3 Interface modes 500, 501 – angular dispersion 507, 508 – double heterojunction 502 – GaAs/AlAs QW’s 503 – single heterojunction 5ß2 – single QW 501 – SL’s 505 Interface plasmons 501 Interface states 478 Internal strain 133, 155 Internal strain parameter 150, 155 – and optical phonon 157, 158 Interstitial defect 160 Intervalley deformation potential 136 Intervalley scattering 135, 215 – by LA phonons 239 – electrons in Si 215–217 – time 229 Intraband scattering 210 – by acoustic phonons 210 – by polar optical phonons 214 Intrinsic defect 160 Invariant subgroup 29 Inverse photoemission 428, 429, 456, 457 Inversion operator 26 Inversion symmetry of energy band 82 Ion cores 18 Ion lasers 385 Ionic bonding 113 Ionicity 2, 304 Ionization energies 432 – group III acceptors in Si 569 – group V donors in Si 569 Ionized impurities scattering 208 Infrared absorption parity selection rule 379 Irreducible 34 Irreducible representations – of group of § 50 – of the double group of ° in zincblende 73 Isoelectronic acceptor 193 Isoelectronic donor 193 Isoelectronic impurity 160 Isomorphism 30, 33 Isotopic shift of bandgaps 340 Isotopically pure Ge 5, 556 Isovalent impurity 160 I–V characteristic of resonant tunnel devices double barriers 527 J Joint-density-of-states 261 K k · p method 68, 257, 266, 338, 561 – band structure of GaAs 78 – dielectric function calculation 263 – spin-orbit interactions 71, 76 k nonconserving photoemission 450 k-conservation in QW’s 481 Keating model 117 Kerr effect 339 Knudsen cell 9 Kohn-Luttinger parameters 78, 82, 175, 484 Kramers degeneracy 147 Kramers-Kronig analysis 567 Kramers-Kronig relations (KKR) 185, 201, 250, 334 Kronig-Penny model 486 Kronig-Penny bands 581 L La 2CuO 4 1, 3 Landau gauge 534 Landau levels 535 – area quantization 537 – degeneracy 537 – filling factor 576 Landau theory of diamagnetism 534 Langmuir(L) 433 Laser annealing 225 Laser diodes 225, 347 (La 1-xSr x) 2CuO 4 1 Lattice absorption 292, 298 Lattice dynamical models 116 Lattice mismatch 11, 478 Lattice relaxation in deep centers 181 Lattice relaxation energy 181 Lattice vector operator 163 Layered semiconductors 3 Lead chalcogenides 450 Level anticrossing 298, 338, 510 Lifetime broadening – critical points 318 – modulation spectra 318 Subject Index 765
Page 1 and 2:
Appendix A: Pioneers of Semiconduct
Page 3 and 4:
Ultra-Pure Germanium 555 Ultra-Pure
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References Ultra-Pure Germanium 557
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Two Pseudopotential Methods: Empiri
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The Early Stages of Band-Structures
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Cyclotron Resonance and Structure o
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References Cyclotron Resonance and
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Optical Properties of Amorphous Sem
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Optical Spectroscopy of Shallow Imp
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Page 21 and 22:
Page 23 and 24:
On the Prehistory of Angular Resolv
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The Discovery and Very Basics of th
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The Birth of the Semiconductor Supe
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Number of papers 500 200 100 50 20
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Appendix B: Solutions to Some of th
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Solution to Problem 2.6 585 transfo
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⎧ ⎫ 2apple ⎪⎨ cos (y z)
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Partial solution to Problem 2.8 589
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Page 41 and 42:
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Solution to Problem 2.16 Solution t
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Solution to Problem 2.20 597 to the
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Therefore the result of I ′ on
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Solution to Problem 3.2(c) Solution
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Solution to Problem 3.5 603 Similar
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Solution to Problem 3.7 (b and c) 6
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u3. The above equation can be reduc
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Solution to Problem 3.8 (a, c and d
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Solution to Problem 3.11(a,b and c)
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Solution to Problem 3.16 613 (1) Al
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Solution to Problem 3.17 Solution t
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Solution to Problem 3.17 617 forces
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Solution to Problem 4.1 619 the abo
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C dz ′ z ′ i° Solution to Pro
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R -R A y E’-E y E’-E R x Soluti
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Solution to Problem 5.3(a) 625 tion
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Solution to Problem 5.5 627 To obta
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Ùm ∞ NLOq 0 2 apple dq 0 ∞
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plus Jz ·Fz Solution to Problem 5
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Solution to Problem 6.7 633 axes. F
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which can be found in standard text
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Solution to Problem 6.11 637 The co
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Solution to Problem 6.19(a) 639 if
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Solution to Problem 6.19(a) 641 k.
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Solution to Problem 6.19(a) 643 The
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Solution to Problem 6.21 645 by a s
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Solution to Problem 6.21 647 °25
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Equating the two expressions for Nn
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Solution to Problem 7.5 651 erties
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A Short Cut to the Calculation of t
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The diagram for the process labeled
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Solution to Problem 7.12 657 or sca
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Solution to Problem 8.1 Solution to
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Solution to Problem 8.9 661 of 19.5
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Solution to Problem 8.10 663 corres
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Solution to Problem 9.2 Solution to
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Solution to Problem 9.4 667 Table 9
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Solution to Problem 9.14 669 Again
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Solution to Problem 9.14 671 Note t
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674 Appendix C A4.1.2 Historical Ba
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676 Appendix C from the slopes of t
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678 Appendix C Fig. A4.3 The electr
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680 Appendix C Fig. A4.5 (a)-(d)The
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682 Appendix C tion of alloying (se
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684 Appendix C 17 -3 Hall Concentra
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Appendix D: Recent Developments and
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Chapter 1 689 ing up the glass to a
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Chapter 2 691 Popov, V. N., Lambin,
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Chapter 2 693 and zinc-blende group
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Chapter 3 695 Inelastic x-ray Scatt
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Chapter 4 697 results from a better
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Chapter 5 699 K. Alberi, K. M. Yu,
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Chapter 5 701 P. Ramvall, N. Carlss
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Chapter 6 Ab initio calculations of
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Chapter 6 705 Strain-induced birefr
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Chapter 7 707 S. Baroni, S. de Giro
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Chapter 7 709 W. Windl, K. Karch, P
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Chapter 8 711 Strain Shift Coeffici
Page 161 and 162: Chapter 9 713 Z. J. Zhao, F. Liu, L
Page 163 and 164: Chapter 9 715 S. F. Ren, W. Cheng,
Page 165: Chapter 9 717 V. P. Gusynin, S. G.
Page 168 and 169: 720 References tions II. Misfitting
Page 170 and 171: 722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 192 and 193: 744 References 7.122 D. C. Reynolds
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 200 and 201: 752 References 9.68 J. P. Palmier:
Page 203 and 204: Subject Index A ·-Sn (gray tin) 95
Page 205 and 206: C c(2 × 8)(111) surface of Ge - di
Page 207 and 208: Dielectric function 117, 246, 253,
Page 209 and 210: Emission rate vs frequency in Ge 34
Page 211: Galena (PbS) 1 Gamma-ray detectors
Page 215 and 216: - - vs T 222 - temperature dependen
Page 217 and 218: - frequency 253, 306, 335 - - of va
Page 219 and 220: Resonant Raman profile 403 Resonant
Page 221 and 222: - - LA phonons 512 - - LO phonons 5
Page 223: - structure 142 - symmetry operatio
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10. Appendix

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