10. Appendix
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Dielectric function 117, 246, 253, 261, 315, 333<br />
– including phonons and free carriers 338<br />
– microscopic theory 254<br />
– of GaAs 248, 253<br />
– – theory vs experiment 265<br />
– of Ge 253, 255<br />
– – theory vs experiment 266<br />
– of Si 254<br />
– of wurtzite GaN 334<br />
– – theory vs experiment 264<br />
Dielectric tensor 245<br />
Difference modes 377<br />
Differential scattering cross section 383<br />
Diffusion of carriers 206<br />
Dilation 124<br />
Dilute magnetic semiconductors 4<br />
Dimension of a representation 35<br />
Dirac delta-function 183<br />
Direct absorption edges 268<br />
– forbidden 273<br />
– of Ge 349<br />
Direct bandgap semiconductor 136, 215<br />
Direct forbidden transitions<br />
– dependence of  i on ˆ 277<br />
– in Cu 2O 287<br />
Direct lattice 23<br />
Direct product of representations 41<br />
Direct sum of representations 40<br />
Direct transition 259, 449<br />
Dislocation 5, 12, 160<br />
Disorder 539<br />
Dispersion<br />
– of J z = 3/2 and J z = 1/2 hole bands in QW’s<br />
484<br />
– of J z = 3/2 and J z = 1/2 hole bands under<br />
uniaxial stress 484<br />
– of the Ge(111)-c(2 × 8) surface bands 460<br />
– Dispersion relations 185, 250<br />
Displacement patterns of phonons in<br />
AlAs/GaAlAs SL’s 501<br />
Displacement vectors 42<br />
Distribution function 206<br />
– Boltzmann 207<br />
– Bose-Einstein 126<br />
– Fermi-Dirac 206<br />
Domain in Gunn diodes 232<br />
Donor acceptor pairs (DAP)<br />
– Coulomb attraction 356<br />
– distribution 423<br />
– luminescence spectra 373<br />
– – in GaP 357, 358<br />
– – lineshapes 357<br />
– – selectively excited in ZnSe 374<br />
– – time resolved 361<br />
– – Type I 357<br />
– – Type II 357<br />
Donor electron 161<br />
– Bohr radius 167<br />
– energy levels in Si 172–173<br />
Donors 160<br />
– associated with anisotropic conduction bands<br />
171<br />
– binding energy in zinc-blende-type<br />
semiconductors 169<br />
– double 160<br />
– hydrogenic 166<br />
– in Si photoconductive response 571<br />
– shallow 166<br />
– tight-binding method 194<br />
Doping superlattices 477<br />
– schematic diagram 578<br />
Doppler broadening 372<br />
Double barrier QW structure 526<br />
Double barrier tunneling devices<br />
I–V characteristics 527<br />
Double groups 72<br />
– representation 98<br />
– notations 64<br />
Double monochromator 386<br />
Drift velocity 205, 226<br />
– dependence on electric field 226<br />
– – in GaAs 231<br />
Drude edge 310<br />
Drude model 306, 310<br />
DX center 170, 182, 197<br />
Dye laser 386<br />
Dynamic effective charges 304<br />
Dynamic range 387<br />
Dynamical matrix 110<br />
Dyson equation 187<br />
E<br />
E 0 critical points 268, 316<br />
E 0 gap 70, 77, 266<br />
E 0 + ¢ 0 critical points 316<br />
E 0 + ¢ 0 gap 266<br />
E 0' transition 267<br />
E 1<br />
– critical points 268, 290, 316<br />
– excitons 290<br />
– transitions 266<br />
E 1 + ¢ 1 critical points 268, 290, 316<br />
E 1' transitions 267<br />
E 2<br />
– critical points 268, 316<br />
– peak 267<br />
Subject Index 759