27.04.2013 Views

10. Appendix

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

724 References<br />

3.23 R. M. Martin: Elastic properties of ZnS structure semiconductors. Phys. Rev.<br />

B 1, 4005–4011 (1970)<br />

R. M. Martin: Dielectric screening model for lattice vibrations of diamondstructure<br />

crystals. Phys. Rev. 186, 871 (1969)<br />

3.24 J. Noolandi: Theory of crystal distortions in A II B IV C2 V and A 1 B III C2 VI chalcopyrite<br />

semiconductors. Phys. Rev. B 10, 2490–2494 (1974)<br />

3.25 S. Göttlicher, E. Wolfel: X-ray determination of the electron distribution in<br />

crystals (in German). Z. Elektrochem. 63, 891–901 (1959)<br />

3.26 L. W. Yang, P. Coppens: On the experimental electron distribution in silicon.<br />

Solid State Commun. 15, 1555–1559 (1974)<br />

3.27 J. Chelikowsky, M. L. Cohen: Nonlocal pseudopotential calculations for the<br />

electronic structure of eleven diamond and zincblende semiconductors. Phys.<br />

Rev. B 14, 556-582 (1976)<br />

3.28 P. Pavone, K. Karch, O. Schütt, W. Windl, D. Strauch, P. Gianozzi, S. Baroni:<br />

Ab initio lattice dynamics of diamond. Phys. Rev. B 48, 3156–3163 (1993)<br />

M. Schwoerer-Bohning, A. T. Macrauder, D. A. Arms: Phonon Dispersion<br />

in Diamond measured by inelastic X-ray scattering. Phys. Rev. Lett. 80,<br />

5572–5575 (1998)<br />

3.29 G. P. Srivastava: The Physics of Phonons (Hilger, Bristol 1990)<br />

3.30 A. Blacha, H. Presting, M. Cardona: Deformation potentials of k=0 states of<br />

tetrahedral semiconductors. Phys. Stat. Solidi b 126, 11–36 (1984)<br />

3.31 D. D. Nolte, W. Walukiewicz, E. E. Haller: Critical criterion for axial modes of<br />

defects in as-grown n-type GaAs. Phys. Rev. B 36, 9374–9377 (1987)<br />

3.32 M. Cardona, N. E. Christensen: Acoustic deformation potentials and heterostructure<br />

band offsets in semiconductors. Phys. Rev. B 35, 6182–6194 (1987)<br />

3.33 E. O. Kane: Strain effects on optical critical-point structure in diamond-type<br />

crystals. Phys. Rev. 178, 1368–1398 (1969)<br />

3.34 G. E. Pikus, G. L. Bir: Effect of deformation on the hole energy spectrum of<br />

germanium and silicon. Sov. Phys. – Solid State 1, 1502–1517 (1960)<br />

3.35 G. E. Pikus, G. L. Bir: Symmetry and Strain Induced Effects in Semiconductors<br />

(Wiley, New York 1974)<br />

3.36 E. L. Ivchenko and G. E. Pikus: Superlattices and other Heterostructures,<br />

(Springer, Heidelberg, 1997), p. 71<br />

3.37 C. Herring, E. Vogt: Transport and deformation-potential theory for manyvalley<br />

semiconductors with anisotropic scattering. Phys. Rev. 101, 944–961<br />

(1956)<br />

3.38 H. Brooks: Theory of the electrical properties of germanium and silicon. Advances<br />

in Electronics and Electron Physics 7, 85–182 (Academic, New York<br />

1955)<br />

3.39 J. F. Nye: Physical Properties of Crystals (Oxford Univ. Press, Oxford 1969)<br />

3.40 G. D. Mahan, J. J. Hopfield: Piezoelectric polaron effects in CdS. Phys. Rev.<br />

Lett. 12, 241–243 (1964)<br />

3.41 K. Hübner: Piezoelectricity in zincblende- and wurtzite-type crystals. Phys.<br />

Stat. Solidi B 57, 627–634 (1973)<br />

3.42 W. A. Harrison: Electronic Structure and the Properties of Solids: The Physics<br />

of the Chemical Bond (Dover, New York 1989) p. 224<br />

3.43 O. Madelung, M. Schulz, H. Weiss (eds.): Landolt-Börnstein, Series III, Vol. 22<br />

(Semiconductors), Subvolume a. Intrinsic Properties of Group IV Elements,<br />

III-V, II-VI and I-VII Compounds (Springer, Berlin, Heidelberg 1987)<br />

3.44 S. Adachi: GaAs, AlAs, and AlxGa 1xAs: Materials parameters for use in research<br />

and device applications. J. Appl. Phys. 58, R1–29 (1985)

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!